TY - JOUR
T1 - Chalcogen passivation
T2 - An in-situ method to manipulate the morphology and electrical property of GaAs nanowires
AU - Yang, Zai Xing
AU - Yin, Yanxue
AU - Sun, Jiamin
AU - Bian, Luozhen
AU - Han, Ning
AU - Zhou, Ziyao
AU - Shu, Lei
AU - Wang, Fengyun
AU - Chen, Yunfa
AU - Song, Aimin
AU - Ho, Johnny C.
N1 - Funding Information:
We acknowledge the National Key R&D Program of China (2017YFA0305500 and 2016YFC0207100), Science Technology and Innovation Committee of Shenzhen Municipality (Grants JCYJ20170307093131123 and JCYJ20160229165240684), “Qilu young scholar” program of Shandong University. We also acknowledge the General Research Fund of the Research Grants Council of Hong Kong SAR, China, under project number CityU 11275916, the National Natural Science Foundation of China (Grants 11404162, 51672229, 51602314 and 61504151), the CAS-CSIRO project of the Bureau of International Co-operation of Chinese Academy of Sciences (122111KYSB20150064).
Publisher Copyright:
© 2018 The Author(s).
PY - 2018/12/1
Y1 - 2018/12/1
N2 - Recently, owing to the large surface-Area-To-volume ratio of nanowires (NWs), manipulation of their surface states becomes technologically important and being investigated for various applications. Here, an in-situ surfactant-Assisted chemical vapor deposition is developed with various chalcogens (e.g. S, Se and Te) as the passivators to enhance the NW growth and to manipulate the controllable p-n conductivity switching of fabricated NW devices. Due to the optimal size effect and electronegativity matching, Se is observed to provide the best NW surface passivation in diminishing the space charge depletion effect induced by the oxide shell and yielding the less p-Type (i.e. inversion) or even insulating conductivity, as compared with S delivering the intense p-Type conductivity for thin NWs with the diameter of ~30 nm. Te does not only provide the surface passivation, but also dopes the NW surface into n-Type conductivity by donating electrons. All of the results can be extended to other kinds of NWs with similar surface effects, resulting in careful device design considerations with appropriate surface passivation for achieving the optimal NW device performances.
AB - Recently, owing to the large surface-Area-To-volume ratio of nanowires (NWs), manipulation of their surface states becomes technologically important and being investigated for various applications. Here, an in-situ surfactant-Assisted chemical vapor deposition is developed with various chalcogens (e.g. S, Se and Te) as the passivators to enhance the NW growth and to manipulate the controllable p-n conductivity switching of fabricated NW devices. Due to the optimal size effect and electronegativity matching, Se is observed to provide the best NW surface passivation in diminishing the space charge depletion effect induced by the oxide shell and yielding the less p-Type (i.e. inversion) or even insulating conductivity, as compared with S delivering the intense p-Type conductivity for thin NWs with the diameter of ~30 nm. Te does not only provide the surface passivation, but also dopes the NW surface into n-Type conductivity by donating electrons. All of the results can be extended to other kinds of NWs with similar surface effects, resulting in careful device design considerations with appropriate surface passivation for achieving the optimal NW device performances.
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U2 - 10.1038/s41598-018-25209-x
DO - 10.1038/s41598-018-25209-x
M3 - Article
C2 - 29720609
AN - SCOPUS:85046491760
VL - 8
JO - Scientific Reports
JF - Scientific Reports
SN - 2045-2322
IS - 1
M1 - 6928
ER -