Challenges of 4H-SiC MOSFETs on the C(000-1) face toward the achievement of ultra low on-resistance

K. Fukuda, S. Harada, J. Senzaki, M. Okamoto, Y. Tanaka, A. Kinoshita, R. Kosugi, K. Kojima, M. Kato, A. Shimozato, K. Suzuki, Y. Hayashi, K. Takao, T. Kato, S. Nishizawa, T. Yatsuo, H. Okumura, H. Ohashi, K. Arai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The C(000-1) face of 4H-SiC has a lot of advantages for the power device fabrication such as the highest oxidation ratio and a smooth surface. However, the DMOS type power MOSFETs on the C(000-1) face have not been realized because of the difficulty of epitaxial growth and of high quality MOS interface formation. We have systematically investigated the device fabrication techniques for power MOSFETs on the C(000-1) face, and succeeded with the IEMOS which have blocking voltage of 660V and an on-resistance of 1.8mΩcm2 and excellent dynamic characteristics.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2007
EditorsAkira Suzuki, Hajime Okumura, Kenji Fukuda, Shin-ichi Nishizawa, Tsunenobu Kimoto, Takashi Fuyuki
PublisherTrans Tech Publications Ltd
Pages907-912
Number of pages6
ISBN (Print)9780878493579
DOIs
Publication statusPublished - 2009
Externally publishedYes
Event12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007 - Otsu, Japan
Duration: Oct 14 2007Oct 19 2007

Publication series

NameMaterials Science Forum
Volume600-603
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

Other12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007
CountryJapan
CityOtsu
Period10/14/0710/19/07

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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