Challenges of 4H-SiC MOSFETs on the C(000-1) face toward the achievement of ultra low on-resistance

K. Fukuda, S. Harada, J. Senzaki, M. Okamoto, Y. Tanaka, A. Kinoshita, R. Kosugi, K. Kojima, M. Kato, A. Shimozato, K. Suzuki, Y. Hayashi, K. Takao, T. Kato, S. Nishizawa, T. Yatsuo, H. Okumura, H. Ohashi, K. Arai

Research output: Contribution to journalConference article

Abstract

The C(000-1) face of 4H-SiC has a lot of advantages for the power device fabrication such as the highest oxidation ratio and a smooth surface. However, the DMOS type power MOSFETs on the C(000-1) face have not been realized because of the difficulty of epitaxial growth and of high quality MOS interface formation. We have systematically investigated the device fabrication techniques for power MOSFETs on the C(000-1) face, and succeeded with the IEMOS which have blocking voltage of 660V and an on-resistance of 1.8mΩcm2 and excellent dynamic characteristics.

Original languageEnglish
Pages (from-to)907-912
Number of pages6
JournalMaterials Science Forum
Volume600-603
DOIs
Publication statusPublished - Apr 10 2009
Externally publishedYes
Event12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007 - Otsu, Japan
Duration: Oct 14 2007Oct 19 2007

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Fukuda, K., Harada, S., Senzaki, J., Okamoto, M., Tanaka, Y., Kinoshita, A., Kosugi, R., Kojima, K., Kato, M., Shimozato, A., Suzuki, K., Hayashi, Y., Takao, K., Kato, T., Nishizawa, S., Yatsuo, T., Okumura, H., Ohashi, H., & Arai, K. (2009). Challenges of 4H-SiC MOSFETs on the C(000-1) face toward the achievement of ultra low on-resistance. Materials Science Forum, 600-603, 907-912. https://doi.org/10.4028/3-908453-11-9.907