Changes in switching fields of CoCrPt- SiO2 perpendicular recording media due to Ru intermediate layer under low and high gas pressures

Weixing Xia, Yasukazu Murakami, Daisuke Shindo, Migaku Takahashi

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

It is well known that the deposition of an intermediate Ru layer under high Ar pressure during the fabrication of CoCrPt- SiO2 perpendicular recording media is effective in improving the magnetic properties of the upper CoCrPt- SiO2 layer. The change in the switching fields of the CoCrPt- SiO2 recording layer resulting from the presence of the high-pressure Ru layer is investigated through experiments and computer simulation. The monotonous increase in the magnetic anisotropy Ku and the decrease in the intergranular exchange coupling of the CoCrPt grains due to the presence of the high-pressure Ru layer result in a slight increase in the nucleation field, a significant increase in the coercivity and the saturation field, and a decrease in the slope of the hysteresis loop.

Original languageEnglish
Article number013926
JournalJournal of Applied Physics
Volume105
Issue number1
DOIs
Publication statusPublished - Jul 9 2009
Externally publishedYes

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gas pressure
recording
coercivity
computerized simulation
hysteresis
nucleation
slopes
magnetic properties
saturation
anisotropy
fabrication
simulation

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Changes in switching fields of CoCrPt- SiO2 perpendicular recording media due to Ru intermediate layer under low and high gas pressures. / Xia, Weixing; Murakami, Yasukazu; Shindo, Daisuke; Takahashi, Migaku.

In: Journal of Applied Physics, Vol. 105, No. 1, 013926, 09.07.2009.

Research output: Contribution to journalArticle

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