Characteristic modulation of silicon MOSFETs and single electron transistors with a movable gate electrode

J. S. Park, T. Saraya, K. Miyaji, K. Shimizu, A. Higo, Koji Takahashi, Y. H. Yi, H. Toshiyoshi, T. Hirarnoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The silicon MOSFET and single-electron-transistor (SET) with a movable gate electrode (MGE) are reported. For the first time, the modulation of the pull-in voltage, where subthreshold swing (SS) is much steeper than 60mV/dec, is experimentally demonstrated in MGE MOSFET using an additional electrode. The modulation of FWHM and peak position of Coulomb blockade oscillation (CBO) by tuning capacitance of SET is also experimentally demonstrated for the first time.

Original languageEnglish
Title of host publicationIEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008
DOIs
Publication statusPublished - 2008
Externally publishedYes
EventIEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008 - Honolulu, HI, United States
Duration: Jun 15 2008Jun 16 2008

Other

OtherIEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008
CountryUnited States
CityHonolulu, HI
Period6/15/086/16/08

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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    Park, J. S., Saraya, T., Miyaji, K., Shimizu, K., Higo, A., Takahashi, K., Yi, Y. H., Toshiyoshi, H., & Hirarnoto, T. (2008). Characteristic modulation of silicon MOSFETs and single electron transistors with a movable gate electrode. In IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008 [5418442] https://doi.org/10.1109/SNW.2008.5418442