Characteristic modulation of silicon MOSFETs and single electron transistors with a movable gate electrode

J. S. Park; T. Saraya; K. Miyaji; K. Shimizu; A. Higo; K. Takahashi; Y. H. Yi; H. Toshiyoshi; T. Hirarnoto

doi:10.1109/SNW.2008.5418442

Characteristic modulation of silicon MOSFETs and single electron transistors with a movable gate electrode

J. S. Park, T. Saraya, K. Miyaji, K. Shimizu, A. Higo, K. Takahashi, Y. H. Yi, H. Toshiyoshi, T. Hirarnoto

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

The silicon MOSFET and single-electron-transistor (SET) with a movable gate electrode (MGE) are reported. For the first time, the modulation of the pull-in voltage, where subthreshold swing (SS) is much steeper than 60mV/dec, is experimentally demonstrated in MGE MOSFET using an additional electrode. The modulation of FWHM and peak position of Coulomb blockade oscillation (CBO) by tuning capacitance of SET is also experimentally demonstrated for the first time.

Original language	English
Title of host publication	IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008
DOIs	https://doi.org/10.1109/SNW.2008.5418442
Publication status	Published - 2008
Externally published	Yes
Event	IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008 - Honolulu, HI, United States Duration: Jun 15 2008 → Jun 16 2008

Publication series

Name	IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008

Other

Other	IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008
Country/Territory	United States
City	Honolulu, HI
Period	6/15/08 → 6/16/08

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/SNW.2008.5418442

Cite this

Park, J. S., Saraya, T., Miyaji, K., Shimizu, K., Higo, A., Takahashi, K., Yi, Y. H., Toshiyoshi, H., & Hirarnoto, T. (2008). Characteristic modulation of silicon MOSFETs and single electron transistors with a movable gate electrode. In IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008 [5418442] (IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008). https://doi.org/10.1109/SNW.2008.5418442

Park, JS, Saraya, T, Miyaji, K, Shimizu, K, Higo, A, Takahashi, K, Yi, YH, Toshiyoshi, H & Hirarnoto, T 2008, Characteristic modulation of silicon MOSFETs and single electron transistors with a movable gate electrode. in IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008., 5418442, IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008, IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008, Honolulu, HI, United States, 6/15/08. https://doi.org/10.1109/SNW.2008.5418442

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title = "Characteristic modulation of silicon MOSFETs and single electron transistors with a movable gate electrode",

abstract = "The silicon MOSFET and single-electron-transistor (SET) with a movable gate electrode (MGE) are reported. For the first time, the modulation of the pull-in voltage, where subthreshold swing (SS) is much steeper than 60mV/dec, is experimentally demonstrated in MGE MOSFET using an additional electrode. The modulation of FWHM and peak position of Coulomb blockade oscillation (CBO) by tuning capacitance of SET is also experimentally demonstrated for the first time.",

author = "Park, {J. S.} and T. Saraya and K. Miyaji and K. Shimizu and A. Higo and K. Takahashi and Yi, {Y. H.} and H. Toshiyoshi and T. Hirarnoto",

year = "2008",

doi = "10.1109/SNW.2008.5418442",

language = "English",

isbn = "9781424420711",

series = "IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008",

booktitle = "IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008",

note = "IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008 ; Conference date: 15-06-2008 Through 16-06-2008",

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TY - GEN

T1 - Characteristic modulation of silicon MOSFETs and single electron transistors with a movable gate electrode

AU - Park, J. S.

AU - Saraya, T.

AU - Miyaji, K.

AU - Shimizu, K.

AU - Higo, A.

AU - Takahashi, K.

AU - Yi, Y. H.

AU - Toshiyoshi, H.

AU - Hirarnoto, T.

PY - 2008

Y1 - 2008

N2 - The silicon MOSFET and single-electron-transistor (SET) with a movable gate electrode (MGE) are reported. For the first time, the modulation of the pull-in voltage, where subthreshold swing (SS) is much steeper than 60mV/dec, is experimentally demonstrated in MGE MOSFET using an additional electrode. The modulation of FWHM and peak position of Coulomb blockade oscillation (CBO) by tuning capacitance of SET is also experimentally demonstrated for the first time.

AB - The silicon MOSFET and single-electron-transistor (SET) with a movable gate electrode (MGE) are reported. For the first time, the modulation of the pull-in voltage, where subthreshold swing (SS) is much steeper than 60mV/dec, is experimentally demonstrated in MGE MOSFET using an additional electrode. The modulation of FWHM and peak position of Coulomb blockade oscillation (CBO) by tuning capacitance of SET is also experimentally demonstrated for the first time.

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U2 - 10.1109/SNW.2008.5418442

DO - 10.1109/SNW.2008.5418442

M3 - Conference contribution

AN - SCOPUS:77949961827

SN - 9781424420711

T3 - IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008

BT - IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008

T2 - IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008

Y2 - 15 June 2008 through 16 June 2008

ER -

Characteristic modulation of silicon MOSFETs and single electron transistors with a movable gate electrode

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