Characteristic of pn junction formed in 4H-SiC by using excimer-laser processing in phosphoric solution

Silicon carbide (SiC) is a promising semiconductor for high-power devices due to its superior material properties; high breakdown field, high electron saturation velocity, and high thermal conductivity. To implement SiC power devices, pn junction must be formed in the SiC. However, ion implantation for impurity doping has several problems for the SiC. For example, while a high-temperature (∼1700 °C) post-implantation annealing is required to electrically activate implanted species[1], it induces generation of crystallographic defects in the SiC, such as segregation of carbon atoms at the surface from the SiC bulk [2]. Therefore, development of new technology for local doping of SiC is highly demanded.