Characteristic of pn junction formed in 4H-SiC by using excimer-laser processing in phosphoric solution

Akihiro Ikeda, Koji Nishi, Daichi Marui, Hiroshi Ikenoue, Tanemasa Asano

Research output: Contribution to conferencePaper

Abstract

Silicon carbide (SiC) is a promising semiconductor for high-power devices due to its superior material properties; high breakdown field, high electron saturation velocity, and high thermal conductivity. To implement SiC power devices, pn junction must be formed in the SiC. However, ion implantation for impurity doping has several problems for the SiC. For example, while a high-temperature (∼1700 °C) post-implantation annealing is required to electrically activate implanted species[1], it induces generation of crystallographic defects in the SiC, such as segregation of carbon atoms at the surface from the SiC bulk [2]. Therefore, development of new technology for local doping of SiC is highly demanded.

Original languageEnglish
Pages63-65
Number of pages3
DOIs
Publication statusPublished - Jan 1 2013
Event2013 13th International Workshop on Junction Technology, IWJT 2013 - Kyoto, Japan
Duration: Jun 6 2013Jun 7 2013

Other

Other2013 13th International Workshop on Junction Technology, IWJT 2013
CountryJapan
CityKyoto
Period6/6/136/7/13

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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    Ikeda, A., Nishi, K., Marui, D., Ikenoue, H., & Asano, T. (2013). Characteristic of pn junction formed in 4H-SiC by using excimer-laser processing in phosphoric solution. 63-65. Paper presented at 2013 13th International Workshop on Junction Technology, IWJT 2013, Kyoto, Japan. https://doi.org/10.1109/IWJT.2013.6644506