Characteristic of pn junction formed in 4H-SiC by using excimer-laser processing in phosphoric solution

Akihiro Ikeda, Koji Nishi, Daichi Marui, Hiroshi Ikenoue, Tanemasa Asano

Research output: Contribution to conferencePaper

Abstract

Silicon carbide (SiC) is a promising semiconductor for high-power devices due to its superior material properties; high breakdown field, high electron saturation velocity, and high thermal conductivity. To implement SiC power devices, pn junction must be formed in the SiC. However, ion implantation for impurity doping has several problems for the SiC. For example, while a high-temperature (∼1700 °C) post-implantation annealing is required to electrically activate implanted species[1], it induces generation of crystallographic defects in the SiC, such as segregation of carbon atoms at the surface from the SiC bulk [2]. Therefore, development of new technology for local doping of SiC is highly demanded.

Original languageEnglish
Pages63-65
Number of pages3
DOIs
Publication statusPublished - Jan 1 2013
Event2013 13th International Workshop on Junction Technology, IWJT 2013 - Kyoto, Japan
Duration: Jun 6 2013Jun 7 2013

Other

Other2013 13th International Workshop on Junction Technology, IWJT 2013
CountryJapan
CityKyoto
Period6/6/136/7/13

Fingerprint

Excimer lasers
Silicon carbide
Processing
Doping (additives)
Ion implantation
Thermal conductivity
Materials properties
Annealing
Impurities
Semiconductor materials
Atoms
Defects
Carbon
Electrons

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Ikeda, A., Nishi, K., Marui, D., Ikenoue, H., & Asano, T. (2013). Characteristic of pn junction formed in 4H-SiC by using excimer-laser processing in phosphoric solution. 63-65. Paper presented at 2013 13th International Workshop on Junction Technology, IWJT 2013, Kyoto, Japan. https://doi.org/10.1109/IWJT.2013.6644506

Characteristic of pn junction formed in 4H-SiC by using excimer-laser processing in phosphoric solution. / Ikeda, Akihiro; Nishi, Koji; Marui, Daichi; Ikenoue, Hiroshi; Asano, Tanemasa.

2013. 63-65 Paper presented at 2013 13th International Workshop on Junction Technology, IWJT 2013, Kyoto, Japan.

Research output: Contribution to conferencePaper

Ikeda, A, Nishi, K, Marui, D, Ikenoue, H & Asano, T 2013, 'Characteristic of pn junction formed in 4H-SiC by using excimer-laser processing in phosphoric solution', Paper presented at 2013 13th International Workshop on Junction Technology, IWJT 2013, Kyoto, Japan, 6/6/13 - 6/7/13 pp. 63-65. https://doi.org/10.1109/IWJT.2013.6644506
Ikeda A, Nishi K, Marui D, Ikenoue H, Asano T. Characteristic of pn junction formed in 4H-SiC by using excimer-laser processing in phosphoric solution. 2013. Paper presented at 2013 13th International Workshop on Junction Technology, IWJT 2013, Kyoto, Japan. https://doi.org/10.1109/IWJT.2013.6644506
Ikeda, Akihiro ; Nishi, Koji ; Marui, Daichi ; Ikenoue, Hiroshi ; Asano, Tanemasa. / Characteristic of pn junction formed in 4H-SiC by using excimer-laser processing in phosphoric solution. Paper presented at 2013 13th International Workshop on Junction Technology, IWJT 2013, Kyoto, Japan.3 p.
@conference{e8e37ac28e0e4e8d8dde99b2d464ace8,
title = "Characteristic of pn junction formed in 4H-SiC by using excimer-laser processing in phosphoric solution",
abstract = "Silicon carbide (SiC) is a promising semiconductor for high-power devices due to its superior material properties; high breakdown field, high electron saturation velocity, and high thermal conductivity. To implement SiC power devices, pn junction must be formed in the SiC. However, ion implantation for impurity doping has several problems for the SiC. For example, while a high-temperature (∼1700 °C) post-implantation annealing is required to electrically activate implanted species[1], it induces generation of crystallographic defects in the SiC, such as segregation of carbon atoms at the surface from the SiC bulk [2]. Therefore, development of new technology for local doping of SiC is highly demanded.",
author = "Akihiro Ikeda and Koji Nishi and Daichi Marui and Hiroshi Ikenoue and Tanemasa Asano",
year = "2013",
month = "1",
day = "1",
doi = "10.1109/IWJT.2013.6644506",
language = "English",
pages = "63--65",
note = "2013 13th International Workshop on Junction Technology, IWJT 2013 ; Conference date: 06-06-2013 Through 07-06-2013",

}

TY - CONF

T1 - Characteristic of pn junction formed in 4H-SiC by using excimer-laser processing in phosphoric solution

AU - Ikeda, Akihiro

AU - Nishi, Koji

AU - Marui, Daichi

AU - Ikenoue, Hiroshi

AU - Asano, Tanemasa

PY - 2013/1/1

Y1 - 2013/1/1

N2 - Silicon carbide (SiC) is a promising semiconductor for high-power devices due to its superior material properties; high breakdown field, high electron saturation velocity, and high thermal conductivity. To implement SiC power devices, pn junction must be formed in the SiC. However, ion implantation for impurity doping has several problems for the SiC. For example, while a high-temperature (∼1700 °C) post-implantation annealing is required to electrically activate implanted species[1], it induces generation of crystallographic defects in the SiC, such as segregation of carbon atoms at the surface from the SiC bulk [2]. Therefore, development of new technology for local doping of SiC is highly demanded.

AB - Silicon carbide (SiC) is a promising semiconductor for high-power devices due to its superior material properties; high breakdown field, high electron saturation velocity, and high thermal conductivity. To implement SiC power devices, pn junction must be formed in the SiC. However, ion implantation for impurity doping has several problems for the SiC. For example, while a high-temperature (∼1700 °C) post-implantation annealing is required to electrically activate implanted species[1], it induces generation of crystallographic defects in the SiC, such as segregation of carbon atoms at the surface from the SiC bulk [2]. Therefore, development of new technology for local doping of SiC is highly demanded.

UR - http://www.scopus.com/inward/record.url?scp=84898642540&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84898642540&partnerID=8YFLogxK

U2 - 10.1109/IWJT.2013.6644506

DO - 10.1109/IWJT.2013.6644506

M3 - Paper

AN - SCOPUS:84898642540

SP - 63

EP - 65

ER -