Characteristics in SiC-CMP using MnO2 slurry with strong oxidant under different atmospheric conditions

Syuhei Kurokawa, Toshiro Doi, Osamu Ohnishi, Tsutomu Yamazaki, Zhe Tan, Tao Yin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

Semiconductor technology is the key point of the information society. However, as technology developing, the traditional semiconductor material such as silicon (Si) could not meet the demand of the society. Therefore, the next generation semiconductor material silicon carbide (SiC) is widely concerned. Compared to Si, SiC has some superior physical and chemical properties. On the other hand, it is difficult to polish SiC wafers due to the chemical, mechanical, and thermal stability. To achieve high-efficient CMP processing of SiC substrates, oxygen gas was introduced which might increase removal rates. MnO2 slurry was selected instead of silica slurry and strong oxidant KMnO4 was used to improve SiC-CMP process as an additive. In this paper, the effect of oxidant was inspected first. Meanwhile, we carried out the CMP experiment with the new type CMP machine to control the processing atmospheres including types of gases and gas pressures. As conclusions, oxygen and high atmospheric pressure can increase the removal rate in MnO2 slurry. KMnO4 additive has a great effect on increase of the removal rate. One of additional interesting results is that there seems to be the optimum mixture ratio of N2 and O2 gases to achieve a higher removal rate of SiC wafer.

Original languageEnglish
Title of host publicationEvolutions in Planarization
Subtitle of host publicationEquipment, Materials, Techniques and Applications
PublisherMaterials Research Society
Pages39-47
Number of pages9
ISBN (Print)9781632661425
DOIs
Publication statusPublished - Jan 1 2013
Event2013 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 1 2013Apr 5 2013

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1560
ISSN (Print)0272-9172

Other

Other2013 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/1/134/5/13

Fingerprint

Cytidine Monophosphate
meteorology
Oxidants
Silicon carbide
silicon carbides
Gases
Silicon
Semiconductor materials
gases
wafers
Oxygen
Industrial Oils
Mechanical stability
Chemical stability
silicon
oxygen
Processing
Silicon Dioxide
chemical properties
Chemical properties

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Kurokawa, S., Doi, T., Ohnishi, O., Yamazaki, T., Tan, Z., & Yin, T. (2013). Characteristics in SiC-CMP using MnO2 slurry with strong oxidant under different atmospheric conditions. In Evolutions in Planarization: Equipment, Materials, Techniques and Applications (pp. 39-47). (Materials Research Society Symposium Proceedings; Vol. 1560). Materials Research Society. https://doi.org/10.1557/opl.2013.903

Characteristics in SiC-CMP using MnO2 slurry with strong oxidant under different atmospheric conditions. / Kurokawa, Syuhei; Doi, Toshiro; Ohnishi, Osamu; Yamazaki, Tsutomu; Tan, Zhe; Yin, Tao.

Evolutions in Planarization: Equipment, Materials, Techniques and Applications. Materials Research Society, 2013. p. 39-47 (Materials Research Society Symposium Proceedings; Vol. 1560).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kurokawa, S, Doi, T, Ohnishi, O, Yamazaki, T, Tan, Z & Yin, T 2013, Characteristics in SiC-CMP using MnO2 slurry with strong oxidant under different atmospheric conditions. in Evolutions in Planarization: Equipment, Materials, Techniques and Applications. Materials Research Society Symposium Proceedings, vol. 1560, Materials Research Society, pp. 39-47, 2013 MRS Spring Meeting, San Francisco, CA, United States, 4/1/13. https://doi.org/10.1557/opl.2013.903
Kurokawa S, Doi T, Ohnishi O, Yamazaki T, Tan Z, Yin T. Characteristics in SiC-CMP using MnO2 slurry with strong oxidant under different atmospheric conditions. In Evolutions in Planarization: Equipment, Materials, Techniques and Applications. Materials Research Society. 2013. p. 39-47. (Materials Research Society Symposium Proceedings). https://doi.org/10.1557/opl.2013.903
Kurokawa, Syuhei ; Doi, Toshiro ; Ohnishi, Osamu ; Yamazaki, Tsutomu ; Tan, Zhe ; Yin, Tao. / Characteristics in SiC-CMP using MnO2 slurry with strong oxidant under different atmospheric conditions. Evolutions in Planarization: Equipment, Materials, Techniques and Applications. Materials Research Society, 2013. pp. 39-47 (Materials Research Society Symposium Proceedings).
@inproceedings{b784c63b65b7453aaa1b8d93d13c2034,
title = "Characteristics in SiC-CMP using MnO2 slurry with strong oxidant under different atmospheric conditions",
abstract = "Semiconductor technology is the key point of the information society. However, as technology developing, the traditional semiconductor material such as silicon (Si) could not meet the demand of the society. Therefore, the next generation semiconductor material silicon carbide (SiC) is widely concerned. Compared to Si, SiC has some superior physical and chemical properties. On the other hand, it is difficult to polish SiC wafers due to the chemical, mechanical, and thermal stability. To achieve high-efficient CMP processing of SiC substrates, oxygen gas was introduced which might increase removal rates. MnO2 slurry was selected instead of silica slurry and strong oxidant KMnO4 was used to improve SiC-CMP process as an additive. In this paper, the effect of oxidant was inspected first. Meanwhile, we carried out the CMP experiment with the new type CMP machine to control the processing atmospheres including types of gases and gas pressures. As conclusions, oxygen and high atmospheric pressure can increase the removal rate in MnO2 slurry. KMnO4 additive has a great effect on increase of the removal rate. One of additional interesting results is that there seems to be the optimum mixture ratio of N2 and O2 gases to achieve a higher removal rate of SiC wafer.",
author = "Syuhei Kurokawa and Toshiro Doi and Osamu Ohnishi and Tsutomu Yamazaki and Zhe Tan and Tao Yin",
year = "2013",
month = "1",
day = "1",
doi = "10.1557/opl.2013.903",
language = "English",
isbn = "9781632661425",
series = "Materials Research Society Symposium Proceedings",
publisher = "Materials Research Society",
pages = "39--47",
booktitle = "Evolutions in Planarization",
address = "United States",

}

TY - GEN

T1 - Characteristics in SiC-CMP using MnO2 slurry with strong oxidant under different atmospheric conditions

AU - Kurokawa, Syuhei

AU - Doi, Toshiro

AU - Ohnishi, Osamu

AU - Yamazaki, Tsutomu

AU - Tan, Zhe

AU - Yin, Tao

PY - 2013/1/1

Y1 - 2013/1/1

N2 - Semiconductor technology is the key point of the information society. However, as technology developing, the traditional semiconductor material such as silicon (Si) could not meet the demand of the society. Therefore, the next generation semiconductor material silicon carbide (SiC) is widely concerned. Compared to Si, SiC has some superior physical and chemical properties. On the other hand, it is difficult to polish SiC wafers due to the chemical, mechanical, and thermal stability. To achieve high-efficient CMP processing of SiC substrates, oxygen gas was introduced which might increase removal rates. MnO2 slurry was selected instead of silica slurry and strong oxidant KMnO4 was used to improve SiC-CMP process as an additive. In this paper, the effect of oxidant was inspected first. Meanwhile, we carried out the CMP experiment with the new type CMP machine to control the processing atmospheres including types of gases and gas pressures. As conclusions, oxygen and high atmospheric pressure can increase the removal rate in MnO2 slurry. KMnO4 additive has a great effect on increase of the removal rate. One of additional interesting results is that there seems to be the optimum mixture ratio of N2 and O2 gases to achieve a higher removal rate of SiC wafer.

AB - Semiconductor technology is the key point of the information society. However, as technology developing, the traditional semiconductor material such as silicon (Si) could not meet the demand of the society. Therefore, the next generation semiconductor material silicon carbide (SiC) is widely concerned. Compared to Si, SiC has some superior physical and chemical properties. On the other hand, it is difficult to polish SiC wafers due to the chemical, mechanical, and thermal stability. To achieve high-efficient CMP processing of SiC substrates, oxygen gas was introduced which might increase removal rates. MnO2 slurry was selected instead of silica slurry and strong oxidant KMnO4 was used to improve SiC-CMP process as an additive. In this paper, the effect of oxidant was inspected first. Meanwhile, we carried out the CMP experiment with the new type CMP machine to control the processing atmospheres including types of gases and gas pressures. As conclusions, oxygen and high atmospheric pressure can increase the removal rate in MnO2 slurry. KMnO4 additive has a great effect on increase of the removal rate. One of additional interesting results is that there seems to be the optimum mixture ratio of N2 and O2 gases to achieve a higher removal rate of SiC wafer.

UR - http://www.scopus.com/inward/record.url?scp=84899881120&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84899881120&partnerID=8YFLogxK

U2 - 10.1557/opl.2013.903

DO - 10.1557/opl.2013.903

M3 - Conference contribution

SN - 9781632661425

T3 - Materials Research Society Symposium Proceedings

SP - 39

EP - 47

BT - Evolutions in Planarization

PB - Materials Research Society

ER -