Characteristics of a novel compliant bump for 3-D stacking with high-density inter-chip connections

N. Watanabe, Tanemasa Asano

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

This paper reports on the detailed characteristics of a novel compliant bump for 3-D stacking with high-density inter-chip connections. The novel compliant bump is a cone-shaped bump made of Au. It is fabricated using electroplating of the Au into undercut holes formed in a photoresist. Because the cone bump is easily deformed under a pressing load, it possesses superior properties for inter-chip connection. First, it suppresses a bonding failure by compensating for the bump-height deviation and the nonuniform bonding pressure, and consequently, offers high-density inter-chip connections of which number is at least 30 600 with 20 μm pitch. Second, it reduces the change in the transconductance gm of the metal-oxide-semiconductor field effect transistor (MOSFET) after chip stacking. In other words, it reduces the strain generation at the Si device level. Third, room-temperature bonding is achieved by mechanical caulking between the cone bumps and the doughnut-shaped electrodes.

Original languageEnglish
Article number5701785
Pages (from-to)83-91
Number of pages9
JournalIEEE Transactions on Components, Packaging and Manufacturing Technology
Volume1
Issue number1
DOIs
Publication statusPublished - Dec 1 2011

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Cones
Transconductance
MOSFET devices
Electroplating
Photoresists
Electrodes
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Cite this

Characteristics of a novel compliant bump for 3-D stacking with high-density inter-chip connections. / Watanabe, N.; Asano, Tanemasa.

In: IEEE Transactions on Components, Packaging and Manufacturing Technology, Vol. 1, No. 1, 5701785, 01.12.2011, p. 83-91.

Research output: Contribution to journalArticle

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