TY - JOUR
T1 - Characteristics of a novel compliant bump for 3-D stacking with high-density inter-chip connections
AU - Watanabe, N.
AU - Asano, T.
N1 - Funding Information:
Manuscript received November 18, 2009; revised August 29, 2010; accepted August 30, 2010. Date of publication January 28, 2011; date of current version March 23, 2011. This work was supported in part by the Regional Rebirth Consortium Project (Monodukuri-Innovation) of METI (Minister of Economy, Trade and Industry), in part by the Knowledge-Based Cluster Project (2nd term) of MEXT (Ministry of Education, Culture, Sports, Science and Technology), and in part by the Grant-in-Aid for Scientific Research (No. 21246061) from JSPS (Japan Society for the Promotion of Science). This work was recommended for publication by Associate Editor R. Mahajan upon evaluation of the reviewers comments.
PY - 2011
Y1 - 2011
N2 - This paper reports on the detailed characteristics of a novel compliant bump for 3-D stacking with high-density inter-chip connections. The novel compliant bump is a cone-shaped bump made of Au. It is fabricated using electroplating of the Au into undercut holes formed in a photoresist. Because the cone bump is easily deformed under a pressing load, it possesses superior properties for inter-chip connection. First, it suppresses a bonding failure by compensating for the bump-height deviation and the nonuniform bonding pressure, and consequently, offers high-density inter-chip connections of which number is at least 30 600 with 20 μm pitch. Second, it reduces the change in the transconductance gm of the metal-oxide-semiconductor field effect transistor (MOSFET) after chip stacking. In other words, it reduces the strain generation at the Si device level. Third, room-temperature bonding is achieved by mechanical caulking between the cone bumps and the doughnut-shaped electrodes.
AB - This paper reports on the detailed characteristics of a novel compliant bump for 3-D stacking with high-density inter-chip connections. The novel compliant bump is a cone-shaped bump made of Au. It is fabricated using electroplating of the Au into undercut holes formed in a photoresist. Because the cone bump is easily deformed under a pressing load, it possesses superior properties for inter-chip connection. First, it suppresses a bonding failure by compensating for the bump-height deviation and the nonuniform bonding pressure, and consequently, offers high-density inter-chip connections of which number is at least 30 600 with 20 μm pitch. Second, it reduces the change in the transconductance gm of the metal-oxide-semiconductor field effect transistor (MOSFET) after chip stacking. In other words, it reduces the strain generation at the Si device level. Third, room-temperature bonding is achieved by mechanical caulking between the cone bumps and the doughnut-shaped electrodes.
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U2 - 10.1109/TCPMT.2010.2101450
DO - 10.1109/TCPMT.2010.2101450
M3 - Article
AN - SCOPUS:84866846495
SN - 2156-3950
VL - 1
SP - 83
EP - 91
JO - IEEE Transactions on Components, Packaging and Manufacturing Technology
JF - IEEE Transactions on Components, Packaging and Manufacturing Technology
IS - 1
M1 - 5701785
ER -