Characteristics of a-Si thin-film transistors with an inorganic black matrix on the top

Yoshimine Kato; Yuki Miyoshi; Masakazu Atsumi; Yoshimasa Kaida; Steven L. Wright; Lauren F. Palmateer

Characteristics of a-Si thin-film transistors with an inorganic black matrix on the top

Yoshimine Kato, Yuki Miyoshi, Masakazu Atsumi, Yoshimasa Kaida, Steven L. Wright, Lauren F. Palmateer

Research output: Contribution to journal › Article › peer-review

Abstract

The characteristics of a-Si bottom-gate TFT test devices with several kinds of inorganic "quasi-black matrix," such as metal, semiconductor, and insulator, on the top were investigated for various black matrix (BM) resistivities. In the I_d-V_g characteristics, for a BM sheet resistance of about ∼1 × 10¹² Ω/□, a high off current and large V_th shift were observed due to the back-gating effects when the BM is charged up. According to the ac dynamic characteristics, there was almost no leakage due to the capacitive coupling between source and drain after 16.6 msec (one frame) when the BM sheet resistance was above ∼7× 10¹³Ω/□ It was found that hydrogenated amorphous silicon germanium (a-SiGe:H) film, which has enough optical density, with the sheet resistance above the order of 10¹⁴Ω/□ is a promising candidate for an inorganic BM on TFT array.

Original language	English
Pages (from-to)	1091-1096
Number of pages	6
Journal	IEICE Transactions on Electronics
Volume	E79-C
Issue number	8
Publication status	Published - Jan 1 1996
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

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title = "Characteristics of a-Si thin-film transistors with an inorganic black matrix on the top",

abstract = "The characteristics of a-Si bottom-gate TFT test devices with several kinds of inorganic {"}quasi-black matrix,{"} such as metal, semiconductor, and insulator, on the top were investigated for various black matrix (BM) resistivities. In the Id-Vg characteristics, for a BM sheet resistance of about ∼1 × 1012 Ω/□, a high off current and large Vth shift were observed due to the back-gating effects when the BM is charged up. According to the ac dynamic characteristics, there was almost no leakage due to the capacitive coupling between source and drain after 16.6 msec (one frame) when the BM sheet resistance was above ∼7× 1013Ω/□ It was found that hydrogenated amorphous silicon germanium (a-SiGe:H) film, which has enough optical density, with the sheet resistance above the order of 1014Ω/□ is a promising candidate for an inorganic BM on TFT array.",

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T1 - Characteristics of a-Si thin-film transistors with an inorganic black matrix on the top

AU - Kato, Yoshimine

AU - Miyoshi, Yuki

AU - Atsumi, Masakazu

AU - Kaida, Yoshimasa

AU - Wright, Steven L.

AU - Palmateer, Lauren F.

PY - 1996/1/1

Y1 - 1996/1/1

N2 - The characteristics of a-Si bottom-gate TFT test devices with several kinds of inorganic "quasi-black matrix," such as metal, semiconductor, and insulator, on the top were investigated for various black matrix (BM) resistivities. In the Id-Vg characteristics, for a BM sheet resistance of about ∼1 × 1012 Ω/□, a high off current and large Vth shift were observed due to the back-gating effects when the BM is charged up. According to the ac dynamic characteristics, there was almost no leakage due to the capacitive coupling between source and drain after 16.6 msec (one frame) when the BM sheet resistance was above ∼7× 1013Ω/□ It was found that hydrogenated amorphous silicon germanium (a-SiGe:H) film, which has enough optical density, with the sheet resistance above the order of 1014Ω/□ is a promising candidate for an inorganic BM on TFT array.

AB - The characteristics of a-Si bottom-gate TFT test devices with several kinds of inorganic "quasi-black matrix," such as metal, semiconductor, and insulator, on the top were investigated for various black matrix (BM) resistivities. In the Id-Vg characteristics, for a BM sheet resistance of about ∼1 × 1012 Ω/□, a high off current and large Vth shift were observed due to the back-gating effects when the BM is charged up. According to the ac dynamic characteristics, there was almost no leakage due to the capacitive coupling between source and drain after 16.6 msec (one frame) when the BM sheet resistance was above ∼7× 1013Ω/□ It was found that hydrogenated amorphous silicon germanium (a-SiGe:H) film, which has enough optical density, with the sheet resistance above the order of 1014Ω/□ is a promising candidate for an inorganic BM on TFT array.

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ER -

Characteristics of a-Si thin-film transistors with an inorganic black matrix on the top

Abstract

All Science Journal Classification (ASJC) codes

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