Abstract
We present the growth of AlN films on vicinal substrates of SiC(0001), The layers were grown by plasma-assisted molecular beam epitaxy (PAMBE) and examined in-situ using reflection high-energy electron diffraction (RHEED). Morphological and structural properties were characterized by atomic force microscopy (AFM) and High Resolution X-Ray Diffraction (HRXRD), respectively. The obtained results by AFM show two main differences with AlN films grown on nominally flat SiC substrates: a) the absence of spiral growth hillocks, and b) the formation of predominantly straight steps. HRXRD measurements on misoriented substrate rocking curves have revealed good structural quality of AlN films (tilt and twist), as well as a disorientation of the c-planes of the AlN with respect to the substrate.
| Original language | English |
|---|---|
| Pages (from-to) | 314-317 |
| Number of pages | 4 |
| Journal | Physica Status Solidi (B) Basic Research |
| Volume | 240 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - Nov 1 2003 |
| Externally published | Yes |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
Characteristics of AlN growth on vicinal SiC(0001) substrates by molecular beam epitaxy. / Brault, J.; Bellet-Amalric, E.; Tanaka, S.; Enjalbert, F.; Le Si Dang, D.; Sarigiannidou, E.; Rouviere, J. L.; Feuillet, G.; Daudin, B.
In: Physica Status Solidi (B) Basic Research, Vol. 240, No. 2, 01.11.2003, p. 314-317.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Characteristics of AlN growth on vicinal SiC(0001) substrates by molecular beam epitaxy
AU - Brault, J.
AU - Bellet-Amalric, E.
AU - Tanaka, S.
AU - Enjalbert, F.
AU - Le Si Dang, D.
AU - Sarigiannidou, E.
AU - Rouviere, J. L.
AU - Feuillet, G.
AU - Daudin, B.
PY - 2003/11/1
Y1 - 2003/11/1
N2 - We present the growth of AlN films on vicinal substrates of SiC(0001), The layers were grown by plasma-assisted molecular beam epitaxy (PAMBE) and examined in-situ using reflection high-energy electron diffraction (RHEED). Morphological and structural properties were characterized by atomic force microscopy (AFM) and High Resolution X-Ray Diffraction (HRXRD), respectively. The obtained results by AFM show two main differences with AlN films grown on nominally flat SiC substrates: a) the absence of spiral growth hillocks, and b) the formation of predominantly straight steps. HRXRD measurements on misoriented substrate rocking curves have revealed good structural quality of AlN films (tilt and twist), as well as a disorientation of the c-planes of the AlN with respect to the substrate.
AB - We present the growth of AlN films on vicinal substrates of SiC(0001), The layers were grown by plasma-assisted molecular beam epitaxy (PAMBE) and examined in-situ using reflection high-energy electron diffraction (RHEED). Morphological and structural properties were characterized by atomic force microscopy (AFM) and High Resolution X-Ray Diffraction (HRXRD), respectively. The obtained results by AFM show two main differences with AlN films grown on nominally flat SiC substrates: a) the absence of spiral growth hillocks, and b) the formation of predominantly straight steps. HRXRD measurements on misoriented substrate rocking curves have revealed good structural quality of AlN films (tilt and twist), as well as a disorientation of the c-planes of the AlN with respect to the substrate.
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U2 - 10.1002/pssb.200303268
DO - 10.1002/pssb.200303268
M3 - Article
AN - SCOPUS:0345357957
VL - 240
SP - 314
EP - 317
JO - Physica Status Solidi (B): Basic Research
JF - Physica Status Solidi (B): Basic Research
SN - 0370-1972
IS - 2
ER -