Characteristics of AlN growth on vicinal SiC(0001) substrates by molecular beam epitaxy

J. Brault; E. Bellet-Amalric; S. Tanaka; F. Enjalbert; D. Le Si Dang; E. Sarigiannidou; J. L. Rouviere; G. Feuillet; B. Daudin

doi:10.1002/pssb.200303268

Characteristics of AlN growth on vicinal SiC(0001) substrates by molecular beam epitaxy

J. Brault, E. Bellet-Amalric, S. Tanaka, F. Enjalbert, D. Le Si Dang, E. Sarigiannidou, J. L. Rouviere, G. Feuillet, B. Daudin

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We present the growth of AlN films on vicinal substrates of SiC(0001), The layers were grown by plasma-assisted molecular beam epitaxy (PAMBE) and examined in-situ using reflection high-energy electron diffraction (RHEED). Morphological and structural properties were characterized by atomic force microscopy (AFM) and High Resolution X-Ray Diffraction (HRXRD), respectively. The obtained results by AFM show two main differences with AlN films grown on nominally flat SiC substrates: a) the absence of spiral growth hillocks, and b) the formation of predominantly straight steps. HRXRD measurements on misoriented substrate rocking curves have revealed good structural quality of AlN films (tilt and twist), as well as a disorientation of the c-planes of the AlN with respect to the substrate.

Original language	English
Pages (from-to)	314-317
Number of pages	4
Journal	Physica Status Solidi (B) Basic Research
Volume	240
Issue number	2
DOIs	https://doi.org/10.1002/pssb.200303268
Publication status	Published - Nov 2003
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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Characteristics of AlN growth on vicinal SiC(0001) substrates by molecular beam epitaxy. / Brault, J.; Bellet-Amalric, E.; Tanaka, S.; Enjalbert, F.; Le Si Dang, D.; Sarigiannidou, E.; Rouviere, J. L.; Feuillet, G.; Daudin, B.

In: Physica Status Solidi (B) Basic Research, Vol. 240, No. 2, 11.2003, p. 314-317.

Research output: Contribution to journal › Article › peer-review

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abstract = "We present the growth of AlN films on vicinal substrates of SiC(0001), The layers were grown by plasma-assisted molecular beam epitaxy (PAMBE) and examined in-situ using reflection high-energy electron diffraction (RHEED). Morphological and structural properties were characterized by atomic force microscopy (AFM) and High Resolution X-Ray Diffraction (HRXRD), respectively. The obtained results by AFM show two main differences with AlN films grown on nominally flat SiC substrates: a) the absence of spiral growth hillocks, and b) the formation of predominantly straight steps. HRXRD measurements on misoriented substrate rocking curves have revealed good structural quality of AlN films (tilt and twist), as well as a disorientation of the c-planes of the AlN with respect to the substrate.",

author = "J. Brault and E. Bellet-Amalric and S. Tanaka and F. Enjalbert and {Le Si Dang}, D. and E. Sarigiannidou and Rouviere, {J. L.} and G. Feuillet and B. Daudin",

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AU - Brault, J.

AU - Bellet-Amalric, E.

AU - Tanaka, S.

AU - Enjalbert, F.

AU - Le Si Dang, D.

AU - Sarigiannidou, E.

AU - Rouviere, J. L.

AU - Feuillet, G.

AU - Daudin, B.

PY - 2003/11

Y1 - 2003/11

N2 - We present the growth of AlN films on vicinal substrates of SiC(0001), The layers were grown by plasma-assisted molecular beam epitaxy (PAMBE) and examined in-situ using reflection high-energy electron diffraction (RHEED). Morphological and structural properties were characterized by atomic force microscopy (AFM) and High Resolution X-Ray Diffraction (HRXRD), respectively. The obtained results by AFM show two main differences with AlN films grown on nominally flat SiC substrates: a) the absence of spiral growth hillocks, and b) the formation of predominantly straight steps. HRXRD measurements on misoriented substrate rocking curves have revealed good structural quality of AlN films (tilt and twist), as well as a disorientation of the c-planes of the AlN with respect to the substrate.

AB - We present the growth of AlN films on vicinal substrates of SiC(0001), The layers were grown by plasma-assisted molecular beam epitaxy (PAMBE) and examined in-situ using reflection high-energy electron diffraction (RHEED). Morphological and structural properties were characterized by atomic force microscopy (AFM) and High Resolution X-Ray Diffraction (HRXRD), respectively. The obtained results by AFM show two main differences with AlN films grown on nominally flat SiC substrates: a) the absence of spiral growth hillocks, and b) the formation of predominantly straight steps. HRXRD measurements on misoriented substrate rocking curves have revealed good structural quality of AlN films (tilt and twist), as well as a disorientation of the c-planes of the AlN with respect to the substrate.

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