Characteristics of AlN growth on vicinal SiC(0001) substrates by molecular beam epitaxy

J. Brault, E. Bellet-Amalric, S. Tanaka, F. Enjalbert, D. Le Si Dang, E. Sarigiannidou, J. L. Rouviere, G. Feuillet, B. Daudin

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We present the growth of AlN films on vicinal substrates of SiC(0001), The layers were grown by plasma-assisted molecular beam epitaxy (PAMBE) and examined in-situ using reflection high-energy electron diffraction (RHEED). Morphological and structural properties were characterized by atomic force microscopy (AFM) and High Resolution X-Ray Diffraction (HRXRD), respectively. The obtained results by AFM show two main differences with AlN films grown on nominally flat SiC substrates: a) the absence of spiral growth hillocks, and b) the formation of predominantly straight steps. HRXRD measurements on misoriented substrate rocking curves have revealed good structural quality of AlN films (tilt and twist), as well as a disorientation of the c-planes of the AlN with respect to the substrate.

Original languageEnglish
Pages (from-to)314-317
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume240
Issue number2
DOIs
Publication statusPublished - Nov 1 2003
Externally publishedYes

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Molecular beam epitaxy
molecular beam epitaxy
Substrates
Atomic force microscopy
atomic force microscopy
disorientation
X ray diffraction
Reflection high energy electron diffraction
high resolution
diffraction
high energy electrons
Structural properties
x rays
electron diffraction
Plasmas
curves

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Brault, J., Bellet-Amalric, E., Tanaka, S., Enjalbert, F., Le Si Dang, D., Sarigiannidou, E., ... Daudin, B. (2003). Characteristics of AlN growth on vicinal SiC(0001) substrates by molecular beam epitaxy. Physica Status Solidi (B) Basic Research, 240(2), 314-317. https://doi.org/10.1002/pssb.200303268

Characteristics of AlN growth on vicinal SiC(0001) substrates by molecular beam epitaxy. / Brault, J.; Bellet-Amalric, E.; Tanaka, S.; Enjalbert, F.; Le Si Dang, D.; Sarigiannidou, E.; Rouviere, J. L.; Feuillet, G.; Daudin, B.

In: Physica Status Solidi (B) Basic Research, Vol. 240, No. 2, 01.11.2003, p. 314-317.

Research output: Contribution to journalArticle

Brault, J, Bellet-Amalric, E, Tanaka, S, Enjalbert, F, Le Si Dang, D, Sarigiannidou, E, Rouviere, JL, Feuillet, G & Daudin, B 2003, 'Characteristics of AlN growth on vicinal SiC(0001) substrates by molecular beam epitaxy', Physica Status Solidi (B) Basic Research, vol. 240, no. 2, pp. 314-317. https://doi.org/10.1002/pssb.200303268
Brault, J. ; Bellet-Amalric, E. ; Tanaka, S. ; Enjalbert, F. ; Le Si Dang, D. ; Sarigiannidou, E. ; Rouviere, J. L. ; Feuillet, G. ; Daudin, B. / Characteristics of AlN growth on vicinal SiC(0001) substrates by molecular beam epitaxy. In: Physica Status Solidi (B) Basic Research. 2003 ; Vol. 240, No. 2. pp. 314-317.
@article{1d2e634d95e3480e8d146cbec22b8f7a,
title = "Characteristics of AlN growth on vicinal SiC(0001) substrates by molecular beam epitaxy",
abstract = "We present the growth of AlN films on vicinal substrates of SiC(0001), The layers were grown by plasma-assisted molecular beam epitaxy (PAMBE) and examined in-situ using reflection high-energy electron diffraction (RHEED). Morphological and structural properties were characterized by atomic force microscopy (AFM) and High Resolution X-Ray Diffraction (HRXRD), respectively. The obtained results by AFM show two main differences with AlN films grown on nominally flat SiC substrates: a) the absence of spiral growth hillocks, and b) the formation of predominantly straight steps. HRXRD measurements on misoriented substrate rocking curves have revealed good structural quality of AlN films (tilt and twist), as well as a disorientation of the c-planes of the AlN with respect to the substrate.",
author = "J. Brault and E. Bellet-Amalric and S. Tanaka and F. Enjalbert and {Le Si Dang}, D. and E. Sarigiannidou and Rouviere, {J. L.} and G. Feuillet and B. Daudin",
year = "2003",
month = "11",
day = "1",
doi = "10.1002/pssb.200303268",
language = "English",
volume = "240",
pages = "314--317",
journal = "Physica Status Solidi (B): Basic Research",
issn = "0370-1972",
publisher = "Wiley-VCH Verlag",
number = "2",

}

TY - JOUR

T1 - Characteristics of AlN growth on vicinal SiC(0001) substrates by molecular beam epitaxy

AU - Brault, J.

AU - Bellet-Amalric, E.

AU - Tanaka, S.

AU - Enjalbert, F.

AU - Le Si Dang, D.

AU - Sarigiannidou, E.

AU - Rouviere, J. L.

AU - Feuillet, G.

AU - Daudin, B.

PY - 2003/11/1

Y1 - 2003/11/1

N2 - We present the growth of AlN films on vicinal substrates of SiC(0001), The layers were grown by plasma-assisted molecular beam epitaxy (PAMBE) and examined in-situ using reflection high-energy electron diffraction (RHEED). Morphological and structural properties were characterized by atomic force microscopy (AFM) and High Resolution X-Ray Diffraction (HRXRD), respectively. The obtained results by AFM show two main differences with AlN films grown on nominally flat SiC substrates: a) the absence of spiral growth hillocks, and b) the formation of predominantly straight steps. HRXRD measurements on misoriented substrate rocking curves have revealed good structural quality of AlN films (tilt and twist), as well as a disorientation of the c-planes of the AlN with respect to the substrate.

AB - We present the growth of AlN films on vicinal substrates of SiC(0001), The layers were grown by plasma-assisted molecular beam epitaxy (PAMBE) and examined in-situ using reflection high-energy electron diffraction (RHEED). Morphological and structural properties were characterized by atomic force microscopy (AFM) and High Resolution X-Ray Diffraction (HRXRD), respectively. The obtained results by AFM show two main differences with AlN films grown on nominally flat SiC substrates: a) the absence of spiral growth hillocks, and b) the formation of predominantly straight steps. HRXRD measurements on misoriented substrate rocking curves have revealed good structural quality of AlN films (tilt and twist), as well as a disorientation of the c-planes of the AlN with respect to the substrate.

UR - http://www.scopus.com/inward/record.url?scp=0345357957&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0345357957&partnerID=8YFLogxK

U2 - 10.1002/pssb.200303268

DO - 10.1002/pssb.200303268

M3 - Article

AN - SCOPUS:0345357957

VL - 240

SP - 314

EP - 317

JO - Physica Status Solidi (B): Basic Research

JF - Physica Status Solidi (B): Basic Research

SN - 0370-1972

IS - 2

ER -