Characteristics of Bloch Line Memory Read Operation in 2 Um Bubble Material

Kimihide Matsuyama, K. Chikamatsu, H. Asada

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The read operation performance in Bloch line memory has been studied using a typical 2 um bubble material. A reasonable operation margin for a chopping detection of vertical Bloch line was performed with a hair-pin type chopping conductor with the 4 um pattern width and 1.5 um pattern gap. The chopping current margin and the bias field margin are 146 mA ± 4.1 %, and 107 Oe ± 6.1 %, respectively. Domain wall configurations during the chopping process have been studied numerically, comparing with experimental results.

Original languageEnglish
Pages (from-to)2517-2519
Number of pages3
JournalIEEE Transactions on Magnetics
Volume26
Issue number5
DOIs
Publication statusPublished - Jan 1 1990

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Domain walls
Data storage equipment

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Characteristics of Bloch Line Memory Read Operation in 2 Um Bubble Material. / Matsuyama, Kimihide; Chikamatsu, K.; Asada, H.

In: IEEE Transactions on Magnetics, Vol. 26, No. 5, 01.01.1990, p. 2517-2519.

Research output: Contribution to journalArticle

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