TY - JOUR
T1 - Characteristics of crystalline silicon/Si quantum dot/poly(3,4- ethylenedioxythiophene) hybrid solar cells
AU - Uchida, Giichiro
AU - Wang, Yuting
AU - Ichida, Daiki
AU - Seo, Hyunwoong
AU - Kamataki, Kunihiro
AU - Itagaki, Naho
AU - Koga, Kazunori
AU - Shiratani, Masaharu
PY - 2013/11
Y1 - 2013/11
N2 - Here, we report the characteristics of a novel organic/inorganic hybrid photovoltaic device using a Si quantum dot (QD) layer synthesized by multihollow discharge plasma chemical vapor deposition. The hybrid device has a p-i-n structure, which consists of a crystalline Si (c-Si) substrate, a Si QD layer, and poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS). We have examined the absorption coefficient and photoconductivity of Si QD layers, and confirmed electricity generation from Si QD layers. We have measured the current-voltage characteristics and incident photon-to-current conversion efficiency (IPCE) of c-Si/Si QD/poly(3,4-ethylenedioxythiophene) (PEDOT) hybrid solar cells. This hybrid device shows an energy conversion efficiency of 2.84%, a short-circuit current of 6.84 mA/cm2, an open-circuit voltage of 0.73 V, and a fill factor of 0.58. A high IPCE value of 82.8% is obtained at a short wavelength of 460 nm.
AB - Here, we report the characteristics of a novel organic/inorganic hybrid photovoltaic device using a Si quantum dot (QD) layer synthesized by multihollow discharge plasma chemical vapor deposition. The hybrid device has a p-i-n structure, which consists of a crystalline Si (c-Si) substrate, a Si QD layer, and poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS). We have examined the absorption coefficient and photoconductivity of Si QD layers, and confirmed electricity generation from Si QD layers. We have measured the current-voltage characteristics and incident photon-to-current conversion efficiency (IPCE) of c-Si/Si QD/poly(3,4-ethylenedioxythiophene) (PEDOT) hybrid solar cells. This hybrid device shows an energy conversion efficiency of 2.84%, a short-circuit current of 6.84 mA/cm2, an open-circuit voltage of 0.73 V, and a fill factor of 0.58. A high IPCE value of 82.8% is obtained at a short wavelength of 460 nm.
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U2 - 10.7567/JJAP.52.11NA05
DO - 10.7567/JJAP.52.11NA05
M3 - Article
AN - SCOPUS:84889071318
SN - 0021-4922
VL - 52
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 11 PART 2
M1 - 11NA05
ER -
