Here, we report the characteristics of a novel organic/inorganic hybrid photovoltaic device using a Si quantum dot (QD) layer synthesized by multihollow discharge plasma chemical vapor deposition. The hybrid device has a p-i-n structure, which consists of a crystalline Si (c-Si) substrate, a Si QD layer, and poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS). We have examined the absorption coefficient and photoconductivity of Si QD layers, and confirmed electricity generation from Si QD layers. We have measured the current-voltage characteristics and incident photon-to-current conversion efficiency (IPCE) of c-Si/Si QD/poly(3,4-ethylenedioxythiophene) (PEDOT) hybrid solar cells. This hybrid device shows an energy conversion efficiency of 2.84%, a short-circuit current of 6.84 mA/cm2, an open-circuit voltage of 0.73 V, and a fill factor of 0.58. A high IPCE value of 82.8% is obtained at a short wavelength of 460 nm.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)