Abstract
Electron emission characteristics have been investigated for polycrystalline diamond films. When the surface of the diamond films deposited on Si substrates and the rear face on which Au/diamond contact is formed are subjected to O2 plasma treatment or annealing, an increase of the electric field commencing electron emission occurs in comparison with that for H2 plasma-treated diamond surface. In the case of the surface treatment, emission characteristics are recovered by H2 plasma treatment after O2 plasma treatment or annealing, while no recovery of the electric field occurs for the Au/diamond sample in which the rear face of the diamond film is treated in the same manner. It is suggested that there exists another factor dominating the field emission characteristic other than field emission mechanisms such as electron injection at the diamond-metal contact and electron emission at the surface with negative electron affinity.
| Original language | English |
|---|---|
| Pages (from-to) | 677-681 |
| Number of pages | 5 |
| Journal | Diamond and Related Materials |
| Volume | 7 |
| Issue number | 2-5 |
| Publication status | Published - Feb 1 1998 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Chemistry(all)
- Mechanical Engineering
- Materials Chemistry
- Electrical and Electronic Engineering
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Characteristics of metal-polycrystalline diamond contact field emitters. / Sugino, Takashi; Iwasaki, Yukio; Kawasaki, Seiji; Yokota, Yuuko; Hattori, Reiji; Shirafuji, Junji.
In: Diamond and Related Materials, Vol. 7, No. 2-5, 01.02.1998, p. 677-681.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Characteristics of metal-polycrystalline diamond contact field emitters
AU - Sugino, Takashi
AU - Iwasaki, Yukio
AU - Kawasaki, Seiji
AU - Yokota, Yuuko
AU - Hattori, Reiji
AU - Shirafuji, Junji
PY - 1998/2/1
Y1 - 1998/2/1
N2 - Electron emission characteristics have been investigated for polycrystalline diamond films. When the surface of the diamond films deposited on Si substrates and the rear face on which Au/diamond contact is formed are subjected to O2 plasma treatment or annealing, an increase of the electric field commencing electron emission occurs in comparison with that for H2 plasma-treated diamond surface. In the case of the surface treatment, emission characteristics are recovered by H2 plasma treatment after O2 plasma treatment or annealing, while no recovery of the electric field occurs for the Au/diamond sample in which the rear face of the diamond film is treated in the same manner. It is suggested that there exists another factor dominating the field emission characteristic other than field emission mechanisms such as electron injection at the diamond-metal contact and electron emission at the surface with negative electron affinity.
AB - Electron emission characteristics have been investigated for polycrystalline diamond films. When the surface of the diamond films deposited on Si substrates and the rear face on which Au/diamond contact is formed are subjected to O2 plasma treatment or annealing, an increase of the electric field commencing electron emission occurs in comparison with that for H2 plasma-treated diamond surface. In the case of the surface treatment, emission characteristics are recovered by H2 plasma treatment after O2 plasma treatment or annealing, while no recovery of the electric field occurs for the Au/diamond sample in which the rear face of the diamond film is treated in the same manner. It is suggested that there exists another factor dominating the field emission characteristic other than field emission mechanisms such as electron injection at the diamond-metal contact and electron emission at the surface with negative electron affinity.
UR - http://www.scopus.com/inward/record.url?scp=0031994118&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0031994118&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0031994118
VL - 7
SP - 677
EP - 681
JO - Diamond and Related Materials
JF - Diamond and Related Materials
SN - 0925-9635
IS - 2-5
ER -