Characteristics of nb-based josephson junctions at a temperature below 1 k1

K. Ishibashi; K. Takeno; Y. Oae; T. Sakae; Y. Matsumoto; A. Katase; S. Takada; H. Akoh; H. Nakagawa

doi:10.1109/20.92547

Characteristics of nb-based josephson junctions at a temperature below 1 k1

K. Ishibashi, K. Takeno, Y. Oae, T. Sakae, Y. Matsumoto, A. Katase, S. Takada, H. Akoh, H. Nakagawa

Applied Nuclear Physics

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

In nuclear radiation detection, superconductors have the inherent advantage of better energy resolution than that of semiconductors. The ultimate energy resolution has never been accomplished by the conventional method of fabricating the tunnel junctions. In this study, lithographic technique for Josephson LSI circuits is applied to the production of a superconducting tunnel junction for radiation detection. Nb-Al/aluminum oxide/Nb tunnel junctions with different junction sizes and barrier oxidation times have been fabricated to study their characteristics. The current-voltage curves were measured in the temperature range from 4.2 to 0.45 K. The junctions showed some amount of leakage current which remained below 2 K. The behavior of the leakage current was successfully understood from its experimental dependence on the junction size.

Original language	English
Pages (from-to)	1354-1357
Number of pages	4
Journal	IEEE Transactions on Magnetics
Volume	25
Issue number	2
DOIs	https://doi.org/10.1109/20.92547
Publication status	Published - Mar 1989

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/20.92547

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title = "Characteristics of nb-based josephson junctions at a temperature below 1 k1",

abstract = "In nuclear radiation detection, superconductors have the inherent advantage of better energy resolution than that of semiconductors. The ultimate energy resolution has never been accomplished by the conventional method of fabricating the tunnel junctions. In this study, lithographic technique for Josephson LSI circuits is applied to the production of a superconducting tunnel junction for radiation detection. Nb-Al/aluminum oxide/Nb tunnel junctions with different junction sizes and barrier oxidation times have been fabricated to study their characteristics. The current-voltage curves were measured in the temperature range from 4.2 to 0.45 K. The junctions showed some amount of leakage current which remained below 2 K. The behavior of the leakage current was successfully understood from its experimental dependence on the junction size.",

author = "K. Ishibashi and K. Takeno and Y. Oae and T. Sakae and Y. Matsumoto and A. Katase and S. Takada and H. Akoh and H. Nakagawa",

note = "Funding Information: In a process of the historical development of Nb-based junctions, the tunnel barrier was formed at first by niobium oxide in a form of Nb/niobium oxide/Nb or Nb-NbN/niobium oxide/NbN-Nb. Material such as amorphous silicon was also attempted to be applied to the barrier formation. For further improvement of junction properties, aluminum oxide was chosen as a 'Work supported in part by Grant in Aid for Encouragement of Young Scientists, Ministry of Education, Science and Culture, Japan. 'Present address: Fujitsu Co. Ltd., 101 Kamiodanaka, Nakahara-ku, Kawasaki 211, Japan.",

year = "1989",

month = mar,

doi = "10.1109/20.92547",

language = "English",

volume = "25",

pages = "1354--1357",

journal = "IEEE Transactions on Magnetics",

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T1 - Characteristics of nb-based josephson junctions at a temperature below 1 k1

AU - Ishibashi, K.

AU - Takeno, K.

AU - Oae, Y.

AU - Sakae, T.

AU - Matsumoto, Y.

AU - Katase, A.

AU - Takada, S.

AU - Akoh, H.

AU - Nakagawa, H.

N1 - Funding Information: In a process of the historical development of Nb-based junctions, the tunnel barrier was formed at first by niobium oxide in a form of Nb/niobium oxide/Nb or Nb-NbN/niobium oxide/NbN-Nb. Material such as amorphous silicon was also attempted to be applied to the barrier formation. For further improvement of junction properties, aluminum oxide was chosen as a 'Work supported in part by Grant in Aid for Encouragement of Young Scientists, Ministry of Education, Science and Culture, Japan. 'Present address: Fujitsu Co. Ltd., 101 Kamiodanaka, Nakahara-ku, Kawasaki 211, Japan.

PY - 1989/3

Y1 - 1989/3

N2 - In nuclear radiation detection, superconductors have the inherent advantage of better energy resolution than that of semiconductors. The ultimate energy resolution has never been accomplished by the conventional method of fabricating the tunnel junctions. In this study, lithographic technique for Josephson LSI circuits is applied to the production of a superconducting tunnel junction for radiation detection. Nb-Al/aluminum oxide/Nb tunnel junctions with different junction sizes and barrier oxidation times have been fabricated to study their characteristics. The current-voltage curves were measured in the temperature range from 4.2 to 0.45 K. The junctions showed some amount of leakage current which remained below 2 K. The behavior of the leakage current was successfully understood from its experimental dependence on the junction size.

AB - In nuclear radiation detection, superconductors have the inherent advantage of better energy resolution than that of semiconductors. The ultimate energy resolution has never been accomplished by the conventional method of fabricating the tunnel junctions. In this study, lithographic technique for Josephson LSI circuits is applied to the production of a superconducting tunnel junction for radiation detection. Nb-Al/aluminum oxide/Nb tunnel junctions with different junction sizes and barrier oxidation times have been fabricated to study their characteristics. The current-voltage curves were measured in the temperature range from 4.2 to 0.45 K. The junctions showed some amount of leakage current which remained below 2 K. The behavior of the leakage current was successfully understood from its experimental dependence on the junction size.

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JF - IEEE Transactions on Magnetics

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Characteristics of nb-based josephson junctions at a temperature below 1 k1

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