TY - JOUR
T1 - Characteristics of photocurrent generation in the near-ultraviolet region in Si quantum-dot sensitized solar cells
AU - Uchida, Giichiro
AU - Sato, Muneharu
AU - Seo, Hyunwoong
AU - Kamataki, Kunihiro
AU - Itagaki, Naho
AU - Koga, Kazunori
AU - Shiratani, Masaharu
N1 - Funding Information:
This work was partly supported by the New Energy and Industrial Technology Development Organization (NEDO) .
PY - 2013/10/1
Y1 - 2013/10/1
N2 - We have studied photocurrent generation in Si quantum-dot (QD) sensitized solar cells, where QD thin films composed of Si nanoparticles were deposited using the double multi-hollow discharge plasma chemical vapor deposition process in an SiH4/H2 and CH4 or N2 gas mixture. The short-circuit current density of the Si QD sensitized solar cells increases by a factor of 2.5 by using Si nanoparticles prepared by irradiation of CH4 or N2 plasma onto the Si nanoparticle surface. We have measured incident photon-to-current conversion efficiency (IPCE) in the near-ultraviolet range using quartz-glass front panels of the QD sensitized solar cells. With decreasing the wavelength of irradiation light, IPCE gradually increases upon light irradiation in a wavelength range less than about 600 nm, and then steeply increases below 300 nm, corresponding to 2.2 times the optical band-gap energy of Si QD film.
AB - We have studied photocurrent generation in Si quantum-dot (QD) sensitized solar cells, where QD thin films composed of Si nanoparticles were deposited using the double multi-hollow discharge plasma chemical vapor deposition process in an SiH4/H2 and CH4 or N2 gas mixture. The short-circuit current density of the Si QD sensitized solar cells increases by a factor of 2.5 by using Si nanoparticles prepared by irradiation of CH4 or N2 plasma onto the Si nanoparticle surface. We have measured incident photon-to-current conversion efficiency (IPCE) in the near-ultraviolet range using quartz-glass front panels of the QD sensitized solar cells. With decreasing the wavelength of irradiation light, IPCE gradually increases upon light irradiation in a wavelength range less than about 600 nm, and then steeply increases below 300 nm, corresponding to 2.2 times the optical band-gap energy of Si QD film.
UR - http://www.scopus.com/inward/record.url?scp=84892416712&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84892416712&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2013.04.111
DO - 10.1016/j.tsf.2013.04.111
M3 - Article
AN - SCOPUS:84892416712
SN - 0040-6090
VL - 544
SP - 93
EP - 98
JO - Thin Solid Films
JF - Thin Solid Films
ER -