Characteristics of silicon CMP performed in various high pressure atmospheres - Development of a new double-side simultaneous CMP machine housed in a high pressure chamber

Kei Kitamura, Toshiro Doi, Syuhei Kurokawa, Osamu Ohnishi, Yoji Umezaki', Tsutomu Yamazaki, Yoji Matsukawa, Tadashi Hasegawa, Isamu Koshiyama, Koichiro Ichikawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A prototype of a unique CMP machine, which can perform double side CMP simultaneously in a sealed pressure chamber, is developed as regarding effective action of the processing atmosphere around workpieces as important. Polishing experiments with single crystal silicon wafers (100) are performed by charging the chamber with various gases. As a result of applying high pressure gases containing oxygen to Si-CMP, 25% increment of removal rate (RR) is achieved.

Original languageEnglish
Title of host publicationAdvanced Metallization Conference 2010
Pages278-279
Number of pages2
Publication statusPublished - 2010
EventAdvanced Metallization Conference 2010 - Albany, NY, United States
Duration: Oct 5 2010Oct 7 2010

Other

OtherAdvanced Metallization Conference 2010
CountryUnited States
CityAlbany, NY
Period10/5/1010/7/10

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Industrial and Manufacturing Engineering

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