Characteristics of the plasma parameters in the fabrication of microcrystalline silicon thin films using 915 MHz ECR plasma

Engineering & Materials Science

• Microcrystalline silicon 100%
• Thin films 50%
• Plasmas 49%
• Fabrication 39%
• Deposition rates 22%
• Langmuir probes 16%
• Electron temperature 15%
• Spectrophotometers 12%
• Raman spectroscopy 11%
• Flow of gases 8%
• Ions 8%
• Volume fraction 8%
• Flow rate 6%
• Gases 5%

Physics & Astronomy

• fabrication 32%
• silicon 28%
• thin films 27%
• electrostatic probes 10%
• spectrophotometers 9%
• gas pressure 8%
• gas flow 8%
• Raman spectroscopy 7%
• low pressure 7%
• flow velocity 7%
• electron energy 6%

Chemical Compounds

• Microcrystallinity 58%
• Plasma 33%
• Electron Temperature 13%
• Flow Kinetics 6%
• Raman Spectroscopy 6%
• Probe 5%
• Pressure 5%
• Volume 5%