Characterization and design optimization of heterojunction photodiodes comprising n-type ultrananocrystalline diamond/hydrogenated amorphous carbon composite and p-type Si

Mahmoud Shaban, Abdelrahman Zkria, Tsuyoshi Yoshitake

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1 Citation (Scopus)

Abstract

In this paper, we characterize and optimize design of a candidate ultraviolet photodiode based on nitrogen-doped ultrananocrystalline diamond hydrogenated amorphous carbon (UNCD/a-C:H) composite films grown on crystalline-Si substrates by coaxial arc plasma deposition. A comprehensive study including growth, fabrication, characterization, and modeling of the photodetector is presented here. The current-voltage characteristics of the device were reproduced and their critical parameters were extracted from a good matching between experimental and simulation results. A midgap acceptor-like defect state density of ~ 5 × 10 17 cm −3 eV −1 was found to be the dominant defect in the UNCD/a-C:H film, in addition to an interface defect density of ~ 3 × 10 13 cm −2 eV −1 at the interface of the UNCD/a-C:H film and the Si substrate. Experimental and simulation results showed that introducing an intrinsic UNCD/a-C:H layer in a pin heterostructure would significantly reduce the device leakage current and consequently improve its performance as an ultraviolet photodiode. Unoptimized fabricated devices exhibited a room temperature photoresponsivity of 135 mA/W measured under illumination of ultraviolet monochromatic light with a wavelength of 254 nm. The key parameters for optimized design of the device were extracted and investigated in details.

Original languageEnglish
Pages (from-to)115-121
Number of pages7
JournalMaterials Science in Semiconductor Processing
Volume86
DOIs
Publication statusPublished - Nov 1 2018

Fingerprint

Diamond
Amorphous carbon
design optimization
Photodiodes
photodiodes
Heterojunctions
heterojunctions
Diamonds
diamonds
Plasma deposition
Defects
optimization
composite materials
Defect density
carbon
Composite materials
Composite films
Substrates
Current voltage characteristics
Photodetectors

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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title = "Characterization and design optimization of heterojunction photodiodes comprising n-type ultrananocrystalline diamond/hydrogenated amorphous carbon composite and p-type Si",
abstract = "In this paper, we characterize and optimize design of a candidate ultraviolet photodiode based on nitrogen-doped ultrananocrystalline diamond hydrogenated amorphous carbon (UNCD/a-C:H) composite films grown on crystalline-Si substrates by coaxial arc plasma deposition. A comprehensive study including growth, fabrication, characterization, and modeling of the photodetector is presented here. The current-voltage characteristics of the device were reproduced and their critical parameters were extracted from a good matching between experimental and simulation results. A midgap acceptor-like defect state density of ~ 5 × 10 17 cm −3 eV −1 was found to be the dominant defect in the UNCD/a-C:H film, in addition to an interface defect density of ~ 3 × 10 13 cm −2 eV −1 at the interface of the UNCD/a-C:H film and the Si substrate. Experimental and simulation results showed that introducing an intrinsic UNCD/a-C:H layer in a pin heterostructure would significantly reduce the device leakage current and consequently improve its performance as an ultraviolet photodiode. Unoptimized fabricated devices exhibited a room temperature photoresponsivity of 135 mA/W measured under illumination of ultraviolet monochromatic light with a wavelength of 254 nm. The key parameters for optimized design of the device were extracted and investigated in details.",
author = "Mahmoud Shaban and Abdelrahman Zkria and Tsuyoshi Yoshitake",
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AU - Zkria, Abdelrahman

AU - Yoshitake, Tsuyoshi

PY - 2018/11/1

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AB - In this paper, we characterize and optimize design of a candidate ultraviolet photodiode based on nitrogen-doped ultrananocrystalline diamond hydrogenated amorphous carbon (UNCD/a-C:H) composite films grown on crystalline-Si substrates by coaxial arc plasma deposition. A comprehensive study including growth, fabrication, characterization, and modeling of the photodetector is presented here. The current-voltage characteristics of the device were reproduced and their critical parameters were extracted from a good matching between experimental and simulation results. A midgap acceptor-like defect state density of ~ 5 × 10 17 cm −3 eV −1 was found to be the dominant defect in the UNCD/a-C:H film, in addition to an interface defect density of ~ 3 × 10 13 cm −2 eV −1 at the interface of the UNCD/a-C:H film and the Si substrate. Experimental and simulation results showed that introducing an intrinsic UNCD/a-C:H layer in a pin heterostructure would significantly reduce the device leakage current and consequently improve its performance as an ultraviolet photodiode. Unoptimized fabricated devices exhibited a room temperature photoresponsivity of 135 mA/W measured under illumination of ultraviolet monochromatic light with a wavelength of 254 nm. The key parameters for optimized design of the device were extracted and investigated in details.

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