TY - JOUR
T1 - Characterization of a-Si
T2 - H and a-Sic: H: F heterojunctions by in situ X-ray photoelectron spectroscopy
AU - Matsuzak, Yoshio
AU - Ohtaki, Teruhiko
AU - Fujishima, Motoi
AU - Yoshida, Yasuhiko
AU - Kawasaki, Masashi
AU - Koinuma, Hideomi
N1 - Funding Information:
ACKNOWLEDGMENT This work was partly supported by the Grant-in-Aid of the Scientific Research from the Ministry of Education, Science and Culture.
PY - 1989/7
Y1 - 1989/7
N2 - Amorphous semiconductor bilayers composed of hydrogenated amorphous silicon (a-Si:H) and hydrogenated fluorinated amorphous silicon carbide (a-SiC: H: F) have been characterized with respect to the interface structure and the valence-band discontinuity using in situ X-ray photoelectron spectroscopy (XPS). XPS of the core levels C Is, F Is and Si 2p and of the valence band was carried out for two types of bilayer specimen. These were obtained by depositing a-Si: H of various thicknesses onto 20 nm of a-SiC: H: F by two different methods: a batch method using conventional gas exchange and a continuous method using excitation energy exchange. An analysis of the intensity associated with photoelectrons emitted from the C Is and F Is core levels in the a-SiC:H:F and passing through the a-Si:H overlayer indicates that the interface fabricated by the batch process is ideally sharp and that by the continuous method has a compositional transition region about 0·5 nm thick. The valence-band offset was determined to be 0·6 eV.
AB - Amorphous semiconductor bilayers composed of hydrogenated amorphous silicon (a-Si:H) and hydrogenated fluorinated amorphous silicon carbide (a-SiC: H: F) have been characterized with respect to the interface structure and the valence-band discontinuity using in situ X-ray photoelectron spectroscopy (XPS). XPS of the core levels C Is, F Is and Si 2p and of the valence band was carried out for two types of bilayer specimen. These were obtained by depositing a-Si: H of various thicknesses onto 20 nm of a-SiC: H: F by two different methods: a batch method using conventional gas exchange and a continuous method using excitation energy exchange. An analysis of the intensity associated with photoelectrons emitted from the C Is and F Is core levels in the a-SiC:H:F and passing through the a-Si:H overlayer indicates that the interface fabricated by the batch process is ideally sharp and that by the continuous method has a compositional transition region about 0·5 nm thick. The valence-band offset was determined to be 0·6 eV.
UR - http://www.scopus.com/inward/record.url?scp=0024699671&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0024699671&partnerID=8YFLogxK
U2 - 10.1080/13642818908228812
DO - 10.1080/13642818908228812
M3 - Article
AN - SCOPUS:0024699671
SN - 1364-2812
VL - 60
SP - 35
EP - 49
JO - Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
JF - Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
IS - 1
ER -