Characterization of a-Si: H and a-Sic: H: F heterojunctions by in situ X-ray photoelectron spectroscopy

Yoshio Matsuzak, Teruhiko Ohtaki, Motoi Fujishima, Yasuhiko Yoshida, Masashi Kawasaki, Hideomi Koinuma

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1 Citation (Scopus)


Amorphous semiconductor bilayers composed of hydrogenated amorphous silicon (a-Si:H) and hydrogenated fluorinated amorphous silicon carbide (a-SiC: H: F) have been characterized with respect to the interface structure and the valence-band discontinuity using in situ X-ray photoelectron spectroscopy (XPS). XPS of the core levels C Is, F Is and Si 2p and of the valence band was carried out for two types of bilayer specimen. These were obtained by depositing a-Si: H of various thicknesses onto 20 nm of a-SiC: H: F by two different methods: a batch method using conventional gas exchange and a continuous method using excitation energy exchange. An analysis of the intensity associated with photoelectrons emitted from the C Is and F Is core levels in the a-SiC:H:F and passing through the a-Si:H overlayer indicates that the interface fabricated by the batch process is ideally sharp and that by the continuous method has a compositional transition region about 0·5 nm thick. The valence-band offset was determined to be 0·6 eV.

Original languageEnglish
Pages (from-to)35-49
Number of pages15
JournalPhilosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
Issue number1
Publication statusPublished - Jul 1989
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Physics and Astronomy(all)


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