Characterization of AgInS 2 thin films prepared by vacuum evaporation

Yoji Akaki, Kyohei Yamashita, Tsuyoshi Yoshitake, Shigeuki Nakamura, Satoru Seto, Takahiro Tokuda, Kenji Yoshino

    Research output: Contribution to journalArticle

    4 Citations (Scopus)

    Abstract

    We characterized AgInS 2 thin films prepared by vacuum evaporation. In the case of thin films annealed at 400 °C, diffraction peaks were observed only for the chalcopyrite AgInS 2 phase. The chemical composition of the thin films annealed at 400 °C was 26.5 at% Ag, 23.8 at% In, and 49.7 at% S. PL spectra of the AgInS 2 thin films at 10.7 K showed peaks at 1.70, 1.80, and 1.83 eV. The PL peak at1.80 eV was attributed to sulfur deficiency.

    Original languageEnglish
    Pages (from-to)2858-2860
    Number of pages3
    JournalPhysica B: Condensed Matter
    Volume407
    Issue number15
    DOIs
    Publication statusPublished - Aug 1 2012

    Fingerprint

    Vacuum evaporation
    evaporation
    Thin films
    vacuum
    thin films
    Sulfur
    chemical composition
    sulfur
    Diffraction
    Chemical analysis
    diffraction

    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering

    Cite this

    Akaki, Y., Yamashita, K., Yoshitake, T., Nakamura, S., Seto, S., Tokuda, T., & Yoshino, K. (2012). Characterization of AgInS 2 thin films prepared by vacuum evaporation. Physica B: Condensed Matter, 407(15), 2858-2860. https://doi.org/10.1016/j.physb.2011.12.119

    Characterization of AgInS 2 thin films prepared by vacuum evaporation. / Akaki, Yoji; Yamashita, Kyohei; Yoshitake, Tsuyoshi; Nakamura, Shigeuki; Seto, Satoru; Tokuda, Takahiro; Yoshino, Kenji.

    In: Physica B: Condensed Matter, Vol. 407, No. 15, 01.08.2012, p. 2858-2860.

    Research output: Contribution to journalArticle

    Akaki, Y, Yamashita, K, Yoshitake, T, Nakamura, S, Seto, S, Tokuda, T & Yoshino, K 2012, 'Characterization of AgInS 2 thin films prepared by vacuum evaporation', Physica B: Condensed Matter, vol. 407, no. 15, pp. 2858-2860. https://doi.org/10.1016/j.physb.2011.12.119
    Akaki, Yoji ; Yamashita, Kyohei ; Yoshitake, Tsuyoshi ; Nakamura, Shigeuki ; Seto, Satoru ; Tokuda, Takahiro ; Yoshino, Kenji. / Characterization of AgInS 2 thin films prepared by vacuum evaporation. In: Physica B: Condensed Matter. 2012 ; Vol. 407, No. 15. pp. 2858-2860.
    @article{4610722ec6ef40b0af650369dbf43066,
    title = "Characterization of AgInS 2 thin films prepared by vacuum evaporation",
    abstract = "We characterized AgInS 2 thin films prepared by vacuum evaporation. In the case of thin films annealed at 400 °C, diffraction peaks were observed only for the chalcopyrite AgInS 2 phase. The chemical composition of the thin films annealed at 400 °C was 26.5 at{\%} Ag, 23.8 at{\%} In, and 49.7 at{\%} S. PL spectra of the AgInS 2 thin films at 10.7 K showed peaks at 1.70, 1.80, and 1.83 eV. The PL peak at1.80 eV was attributed to sulfur deficiency.",
    author = "Yoji Akaki and Kyohei Yamashita and Tsuyoshi Yoshitake and Shigeuki Nakamura and Satoru Seto and Takahiro Tokuda and Kenji Yoshino",
    year = "2012",
    month = "8",
    day = "1",
    doi = "10.1016/j.physb.2011.12.119",
    language = "English",
    volume = "407",
    pages = "2858--2860",
    journal = "Physica B: Condensed Matter",
    issn = "0921-4526",
    publisher = "Elsevier",
    number = "15",

    }

    TY - JOUR

    T1 - Characterization of AgInS 2 thin films prepared by vacuum evaporation

    AU - Akaki, Yoji

    AU - Yamashita, Kyohei

    AU - Yoshitake, Tsuyoshi

    AU - Nakamura, Shigeuki

    AU - Seto, Satoru

    AU - Tokuda, Takahiro

    AU - Yoshino, Kenji

    PY - 2012/8/1

    Y1 - 2012/8/1

    N2 - We characterized AgInS 2 thin films prepared by vacuum evaporation. In the case of thin films annealed at 400 °C, diffraction peaks were observed only for the chalcopyrite AgInS 2 phase. The chemical composition of the thin films annealed at 400 °C was 26.5 at% Ag, 23.8 at% In, and 49.7 at% S. PL spectra of the AgInS 2 thin films at 10.7 K showed peaks at 1.70, 1.80, and 1.83 eV. The PL peak at1.80 eV was attributed to sulfur deficiency.

    AB - We characterized AgInS 2 thin films prepared by vacuum evaporation. In the case of thin films annealed at 400 °C, diffraction peaks were observed only for the chalcopyrite AgInS 2 phase. The chemical composition of the thin films annealed at 400 °C was 26.5 at% Ag, 23.8 at% In, and 49.7 at% S. PL spectra of the AgInS 2 thin films at 10.7 K showed peaks at 1.70, 1.80, and 1.83 eV. The PL peak at1.80 eV was attributed to sulfur deficiency.

    UR - http://www.scopus.com/inward/record.url?scp=84862014914&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=84862014914&partnerID=8YFLogxK

    U2 - 10.1016/j.physb.2011.12.119

    DO - 10.1016/j.physb.2011.12.119

    M3 - Article

    AN - SCOPUS:84862014914

    VL - 407

    SP - 2858

    EP - 2860

    JO - Physica B: Condensed Matter

    JF - Physica B: Condensed Matter

    SN - 0921-4526

    IS - 15

    ER -