Characterization of AgInS 2 thin films prepared by vacuum evaporation

Yoji Akaki, Kyohei Yamashita, Tsuyoshi Yoshitake, Shigeuki Nakamura, Satoru Seto, Takahiro Tokuda, Kenji Yoshino

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    Abstract

    We characterized AgInS 2 thin films prepared by vacuum evaporation. In the case of thin films annealed at 400 °C, diffraction peaks were observed only for the chalcopyrite AgInS 2 phase. The chemical composition of the thin films annealed at 400 °C was 26.5 at% Ag, 23.8 at% In, and 49.7 at% S. PL spectra of the AgInS 2 thin films at 10.7 K showed peaks at 1.70, 1.80, and 1.83 eV. The PL peak at1.80 eV was attributed to sulfur deficiency.

    Original languageEnglish
    Pages (from-to)2858-2860
    Number of pages3
    JournalPhysica B: Condensed Matter
    Volume407
    Issue number15
    DOIs
    Publication statusPublished - Aug 1 2012

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    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering

    Cite this

    Akaki, Y., Yamashita, K., Yoshitake, T., Nakamura, S., Seto, S., Tokuda, T., & Yoshino, K. (2012). Characterization of AgInS 2 thin films prepared by vacuum evaporation. Physica B: Condensed Matter, 407(15), 2858-2860. https://doi.org/10.1016/j.physb.2011.12.119