Characterization of AgInS 2 thin films prepared by vacuum evaporation

Yoji Akaki; Kyohei Yamashita; Tsuyoshi Yoshitake; Shigeuki Nakamura; Satoru Seto; Takahiro Tokuda; Kenji Yoshino

doi:10.1016/j.physb.2011.12.119

Characterization of AgInS ₂ thin films prepared by vacuum evaporation

Yoji Akaki, Kyohei Yamashita, Tsuyoshi Yoshitake, Shigeuki Nakamura, Satoru Seto, Takahiro Tokuda, Kenji Yoshino

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We characterized AgInS ₂ thin films prepared by vacuum evaporation. In the case of thin films annealed at 400 °C, diffraction peaks were observed only for the chalcopyrite AgInS ₂ phase. The chemical composition of the thin films annealed at 400 °C was 26.5 at% Ag, 23.8 at% In, and 49.7 at% S. PL spectra of the AgInS ₂ thin films at 10.7 K showed peaks at 1.70, 1.80, and 1.83 eV. The PL peak at1.80 eV was attributed to sulfur deficiency.

Original language	English
Pages (from-to)	2858-2860
Number of pages	3
Journal	Physica B: Condensed Matter
Volume	407
Issue number	15
DOIs	https://doi.org/10.1016/j.physb.2011.12.119
Publication status	Published - Aug 1 2012

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/j.physb.2011.12.119

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title = "Characterization of AgInS 2 thin films prepared by vacuum evaporation",

abstract = "We characterized AgInS 2 thin films prepared by vacuum evaporation. In the case of thin films annealed at 400 °C, diffraction peaks were observed only for the chalcopyrite AgInS 2 phase. The chemical composition of the thin films annealed at 400 °C was 26.5 at% Ag, 23.8 at% In, and 49.7 at% S. PL spectra of the AgInS 2 thin films at 10.7 K showed peaks at 1.70, 1.80, and 1.83 eV. The PL peak at1.80 eV was attributed to sulfur deficiency.",

author = "Yoji Akaki and Kyohei Yamashita and Tsuyoshi Yoshitake and Shigeuki Nakamura and Satoru Seto and Takahiro Tokuda and Kenji Yoshino",

year = "2012",

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doi = "10.1016/j.physb.2011.12.119",

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T1 - Characterization of AgInS 2 thin films prepared by vacuum evaporation

AU - Akaki, Yoji

AU - Yamashita, Kyohei

AU - Yoshitake, Tsuyoshi

AU - Nakamura, Shigeuki

AU - Seto, Satoru

AU - Tokuda, Takahiro

AU - Yoshino, Kenji

PY - 2012/8/1

Y1 - 2012/8/1

N2 - We characterized AgInS 2 thin films prepared by vacuum evaporation. In the case of thin films annealed at 400 °C, diffraction peaks were observed only for the chalcopyrite AgInS 2 phase. The chemical composition of the thin films annealed at 400 °C was 26.5 at% Ag, 23.8 at% In, and 49.7 at% S. PL spectra of the AgInS 2 thin films at 10.7 K showed peaks at 1.70, 1.80, and 1.83 eV. The PL peak at1.80 eV was attributed to sulfur deficiency.

AB - We characterized AgInS 2 thin films prepared by vacuum evaporation. In the case of thin films annealed at 400 °C, diffraction peaks were observed only for the chalcopyrite AgInS 2 phase. The chemical composition of the thin films annealed at 400 °C was 26.5 at% Ag, 23.8 at% In, and 49.7 at% S. PL spectra of the AgInS 2 thin films at 10.7 K showed peaks at 1.70, 1.80, and 1.83 eV. The PL peak at1.80 eV was attributed to sulfur deficiency.

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M3 - Article

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JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

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ER -

Characterization of AgInS ₂ thin films prepared by vacuum evaporation

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