CoSi_2 gate MOS structures were formed by 20, 30, and 40 keV Si^<2+> Focused Ion Beam (FIB) irradiation to the 14/50 and 21/75 nm Co/Si layers on 20 nm SiO_2 films, and electrical properties of the structures were investigated. The results of the C-V measurement show that the flat-band shift increases with increasing the irradiation damage in SiO_2 films. The leak current was also investigated by the I-V measurement, and it is concluded that the leak current was caused by the irradiation damage in SiO_2 films and the Si-rich layers near the silicide/SiO_2 interface formed by insufficient mixing of Co and Si atoms. In order to optimize the fabrication process of the CoSi_2 gate MOS structures by the irradiation, the irradiation damage induced in SiO_2 films should be minimized, and the sufficient energy should be deposited in Co/Si layers to induce the mixing of Co and Si atoms. For the 21/75 nm Co/Si sample irradiated with 40 keV Si^<2+> to 5×10^<15> cm^<-2>, the Fowler-Nordheirn tunneling current was observed, and flat-band shift was 1.6 V.
|Number of pages||5|
|Journal||Research Reports on Information Science and Electrical Engineering of Kyushu University|
|Publication status||Published - Mar 26 1999|