Characterization of critical volume for percolation in Sn/Si bimetallic cluster assemblies with various packing fractions

Yuichiro Kurokawa, Takehiko Hihara

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Sn1-x/Six cluster assembled films were prepared using a plasma-gas-condensation cluster beam deposition apparatus by energetic cluster impact deposition, and their conductivities were measured for various compositional ratios and packing fractions f. We found that the electrical conductivity σ of Sn1-x/Six cluster assembled films obeys a power law of the Sn concentration pSn. The marked change at approximately pSn = pc, indicates that the percolation of Sn clusters takes place at the threshold value pc. Moreover, we successfully demonstrated using Sn1-x/Six cluster assembled films with various f values that the critical volume fractions of a percolating object, υc = fpc, can be invariant with respect to f.

Original languageEnglish
Article number054714
Journaljournal of the physical society of japan
Volume83
Issue number5
DOIs
Publication statusPublished - May 15 2014
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Characterization of critical volume for percolation in Sn/Si bimetallic cluster assemblies with various packing fractions'. Together they form a unique fingerprint.

  • Cite this