Characterization of disorder and annealing behavior of Si-implanted Ga 1-xAlx As with laser Raman spectroscopy

Koichi Kakimoto, Takashi Katoda

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Effects of aluminum in Ga1-xAlx As on damage introduced by Si implantation and annealing behavior were studied based on Raman spectra. Increase in aluminum content suppresses the introduction of damage. However, aluminum in Ga1-xAlxAs reduced the concentration of Si in lattice site after annealing.

Original languageEnglish
Pages (from-to)1477-1481
Number of pages5
JournalJournal of Applied Physics
Volume59
Issue number5
DOIs
Publication statusPublished - Dec 1 1986
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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