Difference in degree of disorder introduced by ion implantation into In-As and Ga-As bonds in Ga0.47In0.53As was studied with laser Raman spectroscopy. The disorder is introduced more easily into the In-As bond than into the Ga-As one. The disorder is removed simultaneously from both bonds with annealing at a temperature higher than 600°C.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 1983|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)