Characterization of disordered bonds in Si-implanted Ga 0.47In0.53As with laser Raman spectroscopy

K. Kakimoto; T. Katoda

doi:10.1063/1.94104

Characterization of disordered bonds in Si-implanted Ga _0.47In_0.53As with laser Raman spectroscopy

K. Kakimoto, T. Katoda

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Difference in degree of disorder introduced by ion implantation into In-As and Ga-As bonds in Ga_0.47In_0.53As was studied with laser Raman spectroscopy. The disorder is introduced more easily into the In-As bond than into the Ga-As one. The disorder is removed simultaneously from both bonds with annealing at a temperature higher than 600°C.

Original language	English
Pages (from-to)	811-813
Number of pages	3
Journal	Applied Physics Letters
Volume	42
Issue number	9
DOIs	https://doi.org/10.1063/1.94104
Publication status	Published - 1983
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.94104

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title = "Characterization of disordered bonds in Si-implanted Ga 0.47In0.53As with laser Raman spectroscopy",

abstract = "Difference in degree of disorder introduced by ion implantation into In-As and Ga-As bonds in Ga0.47In0.53As was studied with laser Raman spectroscopy. The disorder is introduced more easily into the In-As bond than into the Ga-As one. The disorder is removed simultaneously from both bonds with annealing at a temperature higher than 600°C.",

author = "K. Kakimoto and T. Katoda",

year = "1983",

doi = "10.1063/1.94104",

language = "English",

volume = "42",

pages = "811--813",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

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T1 - Characterization of disordered bonds in Si-implanted Ga 0.47In0.53As with laser Raman spectroscopy

AU - Kakimoto, K.

AU - Katoda, T.

PY - 1983

Y1 - 1983

N2 - Difference in degree of disorder introduced by ion implantation into In-As and Ga-As bonds in Ga0.47In0.53As was studied with laser Raman spectroscopy. The disorder is introduced more easily into the In-As bond than into the Ga-As one. The disorder is removed simultaneously from both bonds with annealing at a temperature higher than 600°C.

AB - Difference in degree of disorder introduced by ion implantation into In-As and Ga-As bonds in Ga0.47In0.53As was studied with laser Raman spectroscopy. The disorder is introduced more easily into the In-As bond than into the Ga-As one. The disorder is removed simultaneously from both bonds with annealing at a temperature higher than 600°C.

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U2 - 10.1063/1.94104

DO - 10.1063/1.94104

M3 - Article

AN - SCOPUS:0012652318

SN - 0003-6951

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SP - 811

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

ER -

Characterization of disordered bonds in Si-implanted Ga _0.47In_0.53As with laser Raman spectroscopy

Abstract

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