Characterization of disordered bonds in Si-implanted Ga 0.47In0.53As with laser Raman spectroscopy

K. Kakimoto, T. Katoda

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Difference in degree of disorder introduced by ion implantation into In-As and Ga-As bonds in Ga0.47In0.53As was studied with laser Raman spectroscopy. The disorder is introduced more easily into the In-As bond than into the Ga-As one. The disorder is removed simultaneously from both bonds with annealing at a temperature higher than 600°C.

Original languageEnglish
Pages (from-to)811-813
Number of pages3
JournalApplied Physics Letters
Issue number9
Publication statusPublished - Dec 1 1983
Externally publishedYes


All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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