Characterization of disordered bonds in Si-implanted Ga 0.47In0.53As with laser Raman spectroscopy

Koichi Kakimoto, T. Katoda

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Difference in degree of disorder introduced by ion implantation into In-As and Ga-As bonds in Ga0.47In0.53As was studied with laser Raman spectroscopy. The disorder is introduced more easily into the In-As bond than into the Ga-As one. The disorder is removed simultaneously from both bonds with annealing at a temperature higher than 600°C.

Original languageEnglish
Pages (from-to)811-813
Number of pages3
JournalApplied Physics Letters
Volume42
Issue number9
DOIs
Publication statusPublished - Dec 1 1983
Externally publishedYes

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laser spectroscopy
Raman spectroscopy
disorders
ion implantation
annealing

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Characterization of disordered bonds in Si-implanted Ga 0.47In0.53As with laser Raman spectroscopy. / Kakimoto, Koichi; Katoda, T.

In: Applied Physics Letters, Vol. 42, No. 9, 01.12.1983, p. 811-813.

Research output: Contribution to journalArticle

@article{0613ca5ff4a14c699d2645ff67b6c981,
title = "Characterization of disordered bonds in Si-implanted Ga 0.47In0.53As with laser Raman spectroscopy",
abstract = "Difference in degree of disorder introduced by ion implantation into In-As and Ga-As bonds in Ga0.47In0.53As was studied with laser Raman spectroscopy. The disorder is introduced more easily into the In-As bond than into the Ga-As one. The disorder is removed simultaneously from both bonds with annealing at a temperature higher than 600°C.",
author = "Koichi Kakimoto and T. Katoda",
year = "1983",
month = "12",
day = "1",
doi = "10.1063/1.94104",
language = "English",
volume = "42",
pages = "811--813",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "9",

}

TY - JOUR

T1 - Characterization of disordered bonds in Si-implanted Ga 0.47In0.53As with laser Raman spectroscopy

AU - Kakimoto, Koichi

AU - Katoda, T.

PY - 1983/12/1

Y1 - 1983/12/1

N2 - Difference in degree of disorder introduced by ion implantation into In-As and Ga-As bonds in Ga0.47In0.53As was studied with laser Raman spectroscopy. The disorder is introduced more easily into the In-As bond than into the Ga-As one. The disorder is removed simultaneously from both bonds with annealing at a temperature higher than 600°C.

AB - Difference in degree of disorder introduced by ion implantation into In-As and Ga-As bonds in Ga0.47In0.53As was studied with laser Raman spectroscopy. The disorder is introduced more easily into the In-As bond than into the Ga-As one. The disorder is removed simultaneously from both bonds with annealing at a temperature higher than 600°C.

UR - http://www.scopus.com/inward/record.url?scp=0012652318&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0012652318&partnerID=8YFLogxK

U2 - 10.1063/1.94104

DO - 10.1063/1.94104

M3 - Article

VL - 42

SP - 811

EP - 813

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 9

ER -