Characterization of epitaxial ZnTe layers grown on GaAs substrates by transmission electron microscopy and photoluminescence

Fabi Zhang, Yoshifumi Ikoma, Jinping Zhang, Ke Xu, Katsuhiko Saito, Qixin Guo

    Research output: Contribution to journalArticlepeer-review

    Abstract

    The authors have investigated the effects of a low-temperature ZnTe buffer layer on structural and optical properties of ZnTe epilayers grown on (100) GaAs substrates by transmission electron microscopy and photoluminescence measurements. It has been found that the low-temperature ZnTe buffer layer can reduce the defects such as disordered region in the ZnTe buffer layer and suppress the dislocations at the ZnTe surface region, resulting in the formation of a high quality ZnTe epilayer grown on the low-temperature buffer layer.

    Original languageEnglish
    Article number021508
    JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
    Volume30
    Issue number2
    DOIs
    Publication statusPublished - Mar 2012

    All Science Journal Classification (ASJC) codes

    • Condensed Matter Physics
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films

    Fingerprint

    Dive into the research topics of 'Characterization of epitaxial ZnTe layers grown on GaAs substrates by transmission electron microscopy and photoluminescence'. Together they form a unique fingerprint.

    Cite this