Characterization of epitaxial ZnTe layers grown on GaAs substrates by transmission electron microscopy and photoluminescence

Fabi Zhang; Yoshifumi Ikoma; Jinping Zhang; Ke Xu; Katsuhiko Saito; Qixin Guo

doi:10.1116/1.3688498

Characterization of epitaxial ZnTe layers grown on GaAs substrates by transmission electron microscopy and photoluminescence

Fabi Zhang, Yoshifumi Ikoma, Jinping Zhang, Ke Xu, Katsuhiko Saito, Qixin Guo

Research output: Contribution to journal › Article › peer-review

Abstract

The authors have investigated the effects of a low-temperature ZnTe buffer layer on structural and optical properties of ZnTe epilayers grown on (100) GaAs substrates by transmission electron microscopy and photoluminescence measurements. It has been found that the low-temperature ZnTe buffer layer can reduce the defects such as disordered region in the ZnTe buffer layer and suppress the dislocations at the ZnTe surface region, resulting in the formation of a high quality ZnTe epilayer grown on the low-temperature buffer layer.

Original language	English
Article number	021508
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	30
Issue number	2
DOIs	https://doi.org/10.1116/1.3688498
Publication status	Published - Mar 2012

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1116/1.3688498

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Characterization of epitaxial ZnTe layers grown on GaAs substrates by transmission electron microscopy and photoluminescence. / Zhang, Fabi; Ikoma, Yoshifumi; Zhang, Jinping; Xu, Ke; Saito, Katsuhiko; Guo, Qixin.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 30, No. 2, 021508, 03.2012.

Research output: Contribution to journal › Article › peer-review

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abstract = "The authors have investigated the effects of a low-temperature ZnTe buffer layer on structural and optical properties of ZnTe epilayers grown on (100) GaAs substrates by transmission electron microscopy and photoluminescence measurements. It has been found that the low-temperature ZnTe buffer layer can reduce the defects such as disordered region in the ZnTe buffer layer and suppress the dislocations at the ZnTe surface region, resulting in the formation of a high quality ZnTe epilayer grown on the low-temperature buffer layer.",

author = "Fabi Zhang and Yoshifumi Ikoma and Jinping Zhang and Ke Xu and Katsuhiko Saito and Qixin Guo",

note = "Funding Information: The authors are grateful to Y. Mitsuishi and M. Nada for their help with sample preparations and measurements. This research was partially supported by the Scientific Research (Grant No. 23560369) and the Partnership Project for Fundamental Technology Researches of the Ministry of Education, Culture, Sports, Science and Technology, Japan.",

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AU - Saito, Katsuhiko

AU - Guo, Qixin

N1 - Funding Information: The authors are grateful to Y. Mitsuishi and M. Nada for their help with sample preparations and measurements. This research was partially supported by the Scientific Research (Grant No. 23560369) and the Partnership Project for Fundamental Technology Researches of the Ministry of Education, Culture, Sports, Science and Technology, Japan.

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Characterization of epitaxial ZnTe layers grown on GaAs substrates by transmission electron microscopy and photoluminescence

Abstract

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