Characterization of Fe3Si/Si schottky contact for future spin-transistor

Yuji Kishi, Mamoru Kumano, Koji Ueda, Taizoh Sadoh, Masanobu Miyao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The electrical characteristics of epitaxially grown Fe3Si/Si structures were investigated. From the I-V and C-V measurements, excellent Shottky barrier characteristics (n=1.0, φ))n=0.62eV) were demonstrated. Moreover, the electrical characteristics did not deteriorate after post-annealing (400°C, 1 h), which guaranteed the thermal stability of Fe3Si/Si structures up to 400°C.

Original languageEnglish
Title of host publicationECS Transactions - SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices
Pages277-280
Number of pages4
Volume16
Edition10
DOIs
Publication statusPublished - 2008
Event3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting - Honolulu, HI, United States
Duration: Oct 12 2008Oct 17 2008

Other

Other3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period10/12/0810/17/08

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Transistors
Thermodynamic stability
Annealing

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Kishi, Y., Kumano, M., Ueda, K., Sadoh, T., & Miyao, M. (2008). Characterization of Fe3Si/Si schottky contact for future spin-transistor. In ECS Transactions - SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices (10 ed., Vol. 16, pp. 277-280) https://doi.org/10.1149/1.2986783

Characterization of Fe3Si/Si schottky contact for future spin-transistor. / Kishi, Yuji; Kumano, Mamoru; Ueda, Koji; Sadoh, Taizoh; Miyao, Masanobu.

ECS Transactions - SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices. Vol. 16 10. ed. 2008. p. 277-280.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kishi, Y, Kumano, M, Ueda, K, Sadoh, T & Miyao, M 2008, Characterization of Fe3Si/Si schottky contact for future spin-transistor. in ECS Transactions - SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices. 10 edn, vol. 16, pp. 277-280, 3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting, Honolulu, HI, United States, 10/12/08. https://doi.org/10.1149/1.2986783
Kishi Y, Kumano M, Ueda K, Sadoh T, Miyao M. Characterization of Fe3Si/Si schottky contact for future spin-transistor. In ECS Transactions - SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices. 10 ed. Vol. 16. 2008. p. 277-280 https://doi.org/10.1149/1.2986783
Kishi, Yuji ; Kumano, Mamoru ; Ueda, Koji ; Sadoh, Taizoh ; Miyao, Masanobu. / Characterization of Fe3Si/Si schottky contact for future spin-transistor. ECS Transactions - SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices. Vol. 16 10. ed. 2008. pp. 277-280
@inproceedings{4a1ffd56b9af40c98ff8e3c7a4bdbbae,
title = "Characterization of Fe3Si/Si schottky contact for future spin-transistor",
abstract = "The electrical characteristics of epitaxially grown Fe3Si/Si structures were investigated. From the I-V and C-V measurements, excellent Shottky barrier characteristics (n=1.0, φ))n=0.62eV) were demonstrated. Moreover, the electrical characteristics did not deteriorate after post-annealing (400°C, 1 h), which guaranteed the thermal stability of Fe3Si/Si structures up to 400°C.",
author = "Yuji Kishi and Mamoru Kumano and Koji Ueda and Taizoh Sadoh and Masanobu Miyao",
year = "2008",
doi = "10.1149/1.2986783",
language = "English",
isbn = "9781566776561",
volume = "16",
pages = "277--280",
booktitle = "ECS Transactions - SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices",
edition = "10",

}

TY - GEN

T1 - Characterization of Fe3Si/Si schottky contact for future spin-transistor

AU - Kishi, Yuji

AU - Kumano, Mamoru

AU - Ueda, Koji

AU - Sadoh, Taizoh

AU - Miyao, Masanobu

PY - 2008

Y1 - 2008

N2 - The electrical characteristics of epitaxially grown Fe3Si/Si structures were investigated. From the I-V and C-V measurements, excellent Shottky barrier characteristics (n=1.0, φ))n=0.62eV) were demonstrated. Moreover, the electrical characteristics did not deteriorate after post-annealing (400°C, 1 h), which guaranteed the thermal stability of Fe3Si/Si structures up to 400°C.

AB - The electrical characteristics of epitaxially grown Fe3Si/Si structures were investigated. From the I-V and C-V measurements, excellent Shottky barrier characteristics (n=1.0, φ))n=0.62eV) were demonstrated. Moreover, the electrical characteristics did not deteriorate after post-annealing (400°C, 1 h), which guaranteed the thermal stability of Fe3Si/Si structures up to 400°C.

UR - http://www.scopus.com/inward/record.url?scp=63149157223&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=63149157223&partnerID=8YFLogxK

U2 - 10.1149/1.2986783

DO - 10.1149/1.2986783

M3 - Conference contribution

AN - SCOPUS:63149157223

SN - 9781566776561

VL - 16

SP - 277

EP - 280

BT - ECS Transactions - SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices

ER -