Characterization of ferroelectric property of c-axis and non-c-axis oriented epitaxially grown bismuth layer-structured ferroelectric thin films with different m-numbers prepared by MOCVD

Takayuki Watanabe, Tomohiro Sakai, Atsushi Saiki, Keisuke Saito, Toyohiko Chikyo, Hiroshi Funakubo

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4 Citations (Scopus)

Abstract

Epitaxial thin films of bismuth layer-structured ferroelectrics (BLSF) with different m-numbers, i.e., Bi2VO5.5 (BVO) (m=1), SrBi2Ta2O9 (SBT) (m=2), and Bi4Ti3O12 (BIT) (m=3), were grown by metalorganic chemical vapor deposition (MOCVD). (001)-oriented films were deposited on (100)SrTiO3. (114)-oriented BVO, (116)-oriented SBT, and (118)-oriented BIT films were deposited on (110)SrTiO3. Moreover, (102)-oriented BVO, (103)-oriented SBT, and (104)-oriented BIT films were deposited on (111)SrTiO3. On (100), (110), and (111)SrTiO3 substrates, c-axis of the deposited films was tilted about 0°, 45°, and 56°, respectively, against perpendicular to the surface of the substrates irrespective of m-number. This suggests the growth of crystallographic equivalent orientation. The distinctive surface morphology originated to the feature of the film orientation was observed. The dielectric constant and the leakage current of c-axis-oriented film was smaller than that of non-c-axis-oriented one, indicating smaller dielectric constant and leakage current along c-axis than a- or b-axes. A larger ferroelectric anisotropy was ascertained for SBT and BIT films. Furthermore, the evaluated spontaneous polarization along a- and c- axes of BIT from the data of the epitaxially grown BIT films well agreed with the reported one for the single crystal. This suggests the ferroelectric property was not strongly affected by the strain in the films.

Original languageEnglish
JournalMaterials Research Society Symposium - Proceedings
Volume655
Publication statusPublished - Dec 1 2001
Externally publishedYes

Fingerprint

Ferroelectric thin films
Bismuth
Metallorganic chemical vapor deposition
bismuth
Ferroelectric materials
metalorganic chemical vapor deposition
thin films
Leakage currents
leakage
Permittivity
permittivity
Epitaxial films
Substrates
Surface morphology
Anisotropy
Single crystals
Polarization
Thin films
anisotropy
strontium titanium oxide

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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title = "Characterization of ferroelectric property of c-axis and non-c-axis oriented epitaxially grown bismuth layer-structured ferroelectric thin films with different m-numbers prepared by MOCVD",
abstract = "Epitaxial thin films of bismuth layer-structured ferroelectrics (BLSF) with different m-numbers, i.e., Bi2VO5.5 (BVO) (m=1), SrBi2Ta2O9 (SBT) (m=2), and Bi4Ti3O12 (BIT) (m=3), were grown by metalorganic chemical vapor deposition (MOCVD). (001)-oriented films were deposited on (100)SrTiO3. (114)-oriented BVO, (116)-oriented SBT, and (118)-oriented BIT films were deposited on (110)SrTiO3. Moreover, (102)-oriented BVO, (103)-oriented SBT, and (104)-oriented BIT films were deposited on (111)SrTiO3. On (100), (110), and (111)SrTiO3 substrates, c-axis of the deposited films was tilted about 0°, 45°, and 56°, respectively, against perpendicular to the surface of the substrates irrespective of m-number. This suggests the growth of crystallographic equivalent orientation. The distinctive surface morphology originated to the feature of the film orientation was observed. The dielectric constant and the leakage current of c-axis-oriented film was smaller than that of non-c-axis-oriented one, indicating smaller dielectric constant and leakage current along c-axis than a- or b-axes. A larger ferroelectric anisotropy was ascertained for SBT and BIT films. Furthermore, the evaluated spontaneous polarization along a- and c- axes of BIT from the data of the epitaxially grown BIT films well agreed with the reported one for the single crystal. This suggests the ferroelectric property was not strongly affected by the strain in the films.",
author = "Takayuki Watanabe and Tomohiro Sakai and Atsushi Saiki and Keisuke Saito and Toyohiko Chikyo and Hiroshi Funakubo",
year = "2001",
month = "12",
day = "1",
language = "English",
volume = "655",
journal = "Materials Research Society Symposium - Proceedings",
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T1 - Characterization of ferroelectric property of c-axis and non-c-axis oriented epitaxially grown bismuth layer-structured ferroelectric thin films with different m-numbers prepared by MOCVD

AU - Watanabe, Takayuki

AU - Sakai, Tomohiro

AU - Saiki, Atsushi

AU - Saito, Keisuke

AU - Chikyo, Toyohiko

AU - Funakubo, Hiroshi

PY - 2001/12/1

Y1 - 2001/12/1

N2 - Epitaxial thin films of bismuth layer-structured ferroelectrics (BLSF) with different m-numbers, i.e., Bi2VO5.5 (BVO) (m=1), SrBi2Ta2O9 (SBT) (m=2), and Bi4Ti3O12 (BIT) (m=3), were grown by metalorganic chemical vapor deposition (MOCVD). (001)-oriented films were deposited on (100)SrTiO3. (114)-oriented BVO, (116)-oriented SBT, and (118)-oriented BIT films were deposited on (110)SrTiO3. Moreover, (102)-oriented BVO, (103)-oriented SBT, and (104)-oriented BIT films were deposited on (111)SrTiO3. On (100), (110), and (111)SrTiO3 substrates, c-axis of the deposited films was tilted about 0°, 45°, and 56°, respectively, against perpendicular to the surface of the substrates irrespective of m-number. This suggests the growth of crystallographic equivalent orientation. The distinctive surface morphology originated to the feature of the film orientation was observed. The dielectric constant and the leakage current of c-axis-oriented film was smaller than that of non-c-axis-oriented one, indicating smaller dielectric constant and leakage current along c-axis than a- or b-axes. A larger ferroelectric anisotropy was ascertained for SBT and BIT films. Furthermore, the evaluated spontaneous polarization along a- and c- axes of BIT from the data of the epitaxially grown BIT films well agreed with the reported one for the single crystal. This suggests the ferroelectric property was not strongly affected by the strain in the films.

AB - Epitaxial thin films of bismuth layer-structured ferroelectrics (BLSF) with different m-numbers, i.e., Bi2VO5.5 (BVO) (m=1), SrBi2Ta2O9 (SBT) (m=2), and Bi4Ti3O12 (BIT) (m=3), were grown by metalorganic chemical vapor deposition (MOCVD). (001)-oriented films were deposited on (100)SrTiO3. (114)-oriented BVO, (116)-oriented SBT, and (118)-oriented BIT films were deposited on (110)SrTiO3. Moreover, (102)-oriented BVO, (103)-oriented SBT, and (104)-oriented BIT films were deposited on (111)SrTiO3. On (100), (110), and (111)SrTiO3 substrates, c-axis of the deposited films was tilted about 0°, 45°, and 56°, respectively, against perpendicular to the surface of the substrates irrespective of m-number. This suggests the growth of crystallographic equivalent orientation. The distinctive surface morphology originated to the feature of the film orientation was observed. The dielectric constant and the leakage current of c-axis-oriented film was smaller than that of non-c-axis-oriented one, indicating smaller dielectric constant and leakage current along c-axis than a- or b-axes. A larger ferroelectric anisotropy was ascertained for SBT and BIT films. Furthermore, the evaluated spontaneous polarization along a- and c- axes of BIT from the data of the epitaxially grown BIT films well agreed with the reported one for the single crystal. This suggests the ferroelectric property was not strongly affected by the strain in the films.

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