Characterization of Fe3Si/Si schottky contact for future spin-transistor

Yuji Kishi, Mamoru Kumano, Koji Ueda, Taizoh Sadoh, Masanobu Miyao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The electrical characteristics of epitaxially grown Fe3Si/Si structures were investigated. From the I-V and C-V measurements, excellent Shottky barrier characteristics (n=1.0, φ))n=0.62eV) were demonstrated. Moreover, the electrical characteristics did not deteriorate after post-annealing (400°C, 1 h), which guaranteed the thermal stability of Fe3Si/Si structures up to 400°C.

Original languageEnglish
Title of host publicationECS Transactions - SiGe, Ge, and Related Compounds 3
Subtitle of host publicationMaterials, Processing, and Devices
Pages277-280
Number of pages4
Edition10
DOIs
Publication statusPublished - Dec 1 2008
Event3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting - Honolulu, HI, United States
Duration: Oct 12 2008Oct 17 2008

Publication series

NameECS Transactions
Number10
Volume16
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period10/12/0810/17/08

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Kishi, Y., Kumano, M., Ueda, K., Sadoh, T., & Miyao, M. (2008). Characterization of Fe3Si/Si schottky contact for future spin-transistor. In ECS Transactions - SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices (10 ed., pp. 277-280). (ECS Transactions; Vol. 16, No. 10). https://doi.org/10.1149/1.2986783