Characterization of gated cold cathode fabrication using standing thin-film technique

Tomoya Yoshida, Tanemasa Asano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have proposed a novel process of fabricating a high-aspect-ratio tip structure, which utilizes the bending of a cantilever made of a sputter deposited WSi2 film induced by ion irradiation. We demonstrated high-current field-electron emission from a gated field emitter array (FEA) fabricated by using the thin-film standing technique. In this paper, characterization of the FEA particularly in terms of emission stability and uniformity is reported. We find an ac-driving is more suitable than a dc-driving in order to decrease the required number of tips in a pixel and to meet the requirement of FED application.

Original languageEnglish
Title of host publication8th IEEE International Vacuum Electronics Conference, IVEC 2007
Pages201-202
Number of pages2
DOIs
Publication statusPublished - Dec 1 2007
Event8th IEEE International Vacuum Electronics Conference, IVEC 2007 - Kitakyushu, Japan
Duration: May 15 2007May 17 2007

Publication series

Name8th IEEE International Vacuum Electronics Conference, IVEC 2007

Other

Other8th IEEE International Vacuum Electronics Conference, IVEC 2007
CountryJapan
CityKitakyushu
Period5/15/075/17/07

Fingerprint

Electron emission
Ion bombardment
Aspect ratio
Cathodes
Pixels
Fabrication
Thin films

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Yoshida, T., & Asano, T. (2007). Characterization of gated cold cathode fabrication using standing thin-film technique. In 8th IEEE International Vacuum Electronics Conference, IVEC 2007 (pp. 201-202). [4283286] (8th IEEE International Vacuum Electronics Conference, IVEC 2007). https://doi.org/10.1109/IVELEC.2007.4283286

Characterization of gated cold cathode fabrication using standing thin-film technique. / Yoshida, Tomoya; Asano, Tanemasa.

8th IEEE International Vacuum Electronics Conference, IVEC 2007. 2007. p. 201-202 4283286 (8th IEEE International Vacuum Electronics Conference, IVEC 2007).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yoshida, T & Asano, T 2007, Characterization of gated cold cathode fabrication using standing thin-film technique. in 8th IEEE International Vacuum Electronics Conference, IVEC 2007., 4283286, 8th IEEE International Vacuum Electronics Conference, IVEC 2007, pp. 201-202, 8th IEEE International Vacuum Electronics Conference, IVEC 2007, Kitakyushu, Japan, 5/15/07. https://doi.org/10.1109/IVELEC.2007.4283286
Yoshida T, Asano T. Characterization of gated cold cathode fabrication using standing thin-film technique. In 8th IEEE International Vacuum Electronics Conference, IVEC 2007. 2007. p. 201-202. 4283286. (8th IEEE International Vacuum Electronics Conference, IVEC 2007). https://doi.org/10.1109/IVELEC.2007.4283286
Yoshida, Tomoya ; Asano, Tanemasa. / Characterization of gated cold cathode fabrication using standing thin-film technique. 8th IEEE International Vacuum Electronics Conference, IVEC 2007. 2007. pp. 201-202 (8th IEEE International Vacuum Electronics Conference, IVEC 2007).
@inproceedings{d0f8030b1ee64135a20735b2c5de6ca3,
title = "Characterization of gated cold cathode fabrication using standing thin-film technique",
abstract = "We have proposed a novel process of fabricating a high-aspect-ratio tip structure, which utilizes the bending of a cantilever made of a sputter deposited WSi2 film induced by ion irradiation. We demonstrated high-current field-electron emission from a gated field emitter array (FEA) fabricated by using the thin-film standing technique. In this paper, characterization of the FEA particularly in terms of emission stability and uniformity is reported. We find an ac-driving is more suitable than a dc-driving in order to decrease the required number of tips in a pixel and to meet the requirement of FED application.",
author = "Tomoya Yoshida and Tanemasa Asano",
year = "2007",
month = "12",
day = "1",
doi = "10.1109/IVELEC.2007.4283286",
language = "English",
isbn = "1424406331",
series = "8th IEEE International Vacuum Electronics Conference, IVEC 2007",
pages = "201--202",
booktitle = "8th IEEE International Vacuum Electronics Conference, IVEC 2007",

}

TY - GEN

T1 - Characterization of gated cold cathode fabrication using standing thin-film technique

AU - Yoshida, Tomoya

AU - Asano, Tanemasa

PY - 2007/12/1

Y1 - 2007/12/1

N2 - We have proposed a novel process of fabricating a high-aspect-ratio tip structure, which utilizes the bending of a cantilever made of a sputter deposited WSi2 film induced by ion irradiation. We demonstrated high-current field-electron emission from a gated field emitter array (FEA) fabricated by using the thin-film standing technique. In this paper, characterization of the FEA particularly in terms of emission stability and uniformity is reported. We find an ac-driving is more suitable than a dc-driving in order to decrease the required number of tips in a pixel and to meet the requirement of FED application.

AB - We have proposed a novel process of fabricating a high-aspect-ratio tip structure, which utilizes the bending of a cantilever made of a sputter deposited WSi2 film induced by ion irradiation. We demonstrated high-current field-electron emission from a gated field emitter array (FEA) fabricated by using the thin-film standing technique. In this paper, characterization of the FEA particularly in terms of emission stability and uniformity is reported. We find an ac-driving is more suitable than a dc-driving in order to decrease the required number of tips in a pixel and to meet the requirement of FED application.

UR - http://www.scopus.com/inward/record.url?scp=47649112603&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=47649112603&partnerID=8YFLogxK

U2 - 10.1109/IVELEC.2007.4283286

DO - 10.1109/IVELEC.2007.4283286

M3 - Conference contribution

AN - SCOPUS:47649112603

SN - 1424406331

SN - 9781424406333

T3 - 8th IEEE International Vacuum Electronics Conference, IVEC 2007

SP - 201

EP - 202

BT - 8th IEEE International Vacuum Electronics Conference, IVEC 2007

ER -