Characterization of inclusions in SiC bulk crystals grown by modified lely method

Fusao Hirose, Yasuo Kitou, Naoki Oyanagi, Tomohisa Kato, Shin Ichi Nishizawa, Kazuo Arai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We have investigated two types of inclusions. They were a dendrite and a transparent inclusion, which have been seldom reported. The dendrite consisted of carbon, titanium and vanadium except for silicon. It should be carbide of titanium and vanadium. The titanium and vanadium might be incorporated from the source. By using a high purity source, it is possible to prevent generation of the dendrite. The transparent inclusion was observed in the SiC bulk crystal even in the growth with the chemical treated SiC source powder. A remarkable feature of the transparent inclusion was to have a small empty core. It was considered that the core might be a trace of Si droplet caused by C/Si ratio fluctuation of sublimated gas. Therefore, the C/Si ratio during the growth should be stabilized to prevent generation of the transparent inclusions.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2001
EditorsS. Yoshida, S. Nishino, H. Harima, T. Kimoto
PublisherTrans Tech Publications Ltd
Pages75-78
Number of pages4
ISBN (Print)9780878498949
DOIs
Publication statusPublished - Jan 1 2002
Externally publishedYes
EventInternational Conference on Silicon Carbide and Related Materials, ICSCRM 2001 - Tsukuba, Japan
Duration: Oct 28 2001Nov 2 2001

Publication series

NameMaterials Science Forum
Volume389-393
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Conference

ConferenceInternational Conference on Silicon Carbide and Related Materials, ICSCRM 2001
CountryJapan
CityTsukuba
Period10/28/0111/2/01

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Hirose, F., Kitou, Y., Oyanagi, N., Kato, T., Nishizawa, S. I., & Arai, K. (2002). Characterization of inclusions in SiC bulk crystals grown by modified lely method. In S. Yoshida, S. Nishino, H. Harima, & T. Kimoto (Eds.), Silicon Carbide and Related Materials 2001 (pp. 75-78). (Materials Science Forum; Vol. 389-393). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.3S9-393.75