Characterization of local electrical properties of polycrystalline silicon thin films and hydrogen termination effect by conductive atomic force microscopy

Emi MacHida, Yukiharu Uraoka, Takashi Fuyuki, Ryohei Kokawa, Takeshi Ito, Hiroshi Ikenoue

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We observed local electrical properties of polycrystalline silicon films by conductive atomic force microscopy. Moreover, we investigated the effects of hydrogen termination on the polycrystalline silicon films. Before hydrogen termination, conductive regions in grain disappeared with the repeated scanning of the cantilever, while conductive regions in grain boundary almost unchanged. It is considered that hopping conduction is a major electrical conduction mechanism at grain boundaries. After 5 min hydrogen termination, locally nonterminated regions were observed near grain boundaries. This suggests that hydrogen termination of the polycrystalline silicon does not randomly progress, and there are regions that cannot be easily inactivated near grain boundaries.

Original languageEnglish
Article number182104
JournalApplied Physics Letters
Volume94
Issue number18
DOIs
Publication statusPublished - May 18 2009

Fingerprint

grain boundaries
electrical properties
atomic force microscopy
silicon
hydrogen
thin films
silicon films
conduction
scanning

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Characterization of local electrical properties of polycrystalline silicon thin films and hydrogen termination effect by conductive atomic force microscopy. / MacHida, Emi; Uraoka, Yukiharu; Fuyuki, Takashi; Kokawa, Ryohei; Ito, Takeshi; Ikenoue, Hiroshi.

In: Applied Physics Letters, Vol. 94, No. 18, 182104, 18.05.2009.

Research output: Contribution to journalArticle

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