Characterization of metal-induced lateral crystallization of amorphous SiGe on insulating film

Masaru Itakura, Syunji Masumori, Tomohisa Ohta, Yoshitsugu Tomokiyo, Noriyuki Kuwano, Hiroshi Kanno, Taizoh Sadoh, Masanobu Miyao

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Ni metal-induced lateral crystallization (Ni-MILC) of amorphous Si0.6Ge0.4 thin films has been investigated by means of scanning electron microscopy and transmission electron microscopy. A pattern of Ni about 5 nm thick was fabricated to cover selective areas of the a-Si0.6Ge0.4 film. Subsequently, the thin film was annealed at 550 °C for various lengths of time. In the area covered with Ni, Ni atoms diffuse into the SiGe film and react with Ge to produce precipitates of Ni2Ge, leaving amorphous Si. In the area outside of the Ni-covered one, on the other hand, crystallization occurs to form aggregates of small Si0.6Ge0.4 grains without Ni incorporation. In the MILC process, the kind of Ni compound phase changes with the amount of diffusing Ni and the lateral crystallization should be induced by the formation of NiSi2.

Original languageEnglish
Pages (from-to)57-60
Number of pages4
JournalThin Solid Films
Volume508
Issue number1-2
DOIs
Publication statusPublished - Jun 5 2006

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Crystallization
Metals
crystallization
metals
Thin films
Amorphous films
thin films
Precipitates
precipitates
Transmission electron microscopy
Atoms
transmission electron microscopy
Scanning electron microscopy
scanning electron microscopy
atoms

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Characterization of metal-induced lateral crystallization of amorphous SiGe on insulating film. / Itakura, Masaru; Masumori, Syunji; Ohta, Tomohisa; Tomokiyo, Yoshitsugu; Kuwano, Noriyuki; Kanno, Hiroshi; Sadoh, Taizoh; Miyao, Masanobu.

In: Thin Solid Films, Vol. 508, No. 1-2, 05.06.2006, p. 57-60.

Research output: Contribution to journalArticle

Itakura, Masaru ; Masumori, Syunji ; Ohta, Tomohisa ; Tomokiyo, Yoshitsugu ; Kuwano, Noriyuki ; Kanno, Hiroshi ; Sadoh, Taizoh ; Miyao, Masanobu. / Characterization of metal-induced lateral crystallization of amorphous SiGe on insulating film. In: Thin Solid Films. 2006 ; Vol. 508, No. 1-2. pp. 57-60.
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abstract = "Ni metal-induced lateral crystallization (Ni-MILC) of amorphous Si0.6Ge0.4 thin films has been investigated by means of scanning electron microscopy and transmission electron microscopy. A pattern of Ni about 5 nm thick was fabricated to cover selective areas of the a-Si0.6Ge0.4 film. Subsequently, the thin film was annealed at 550 °C for various lengths of time. In the area covered with Ni, Ni atoms diffuse into the SiGe film and react with Ge to produce precipitates of Ni2Ge, leaving amorphous Si. In the area outside of the Ni-covered one, on the other hand, crystallization occurs to form aggregates of small Si0.6Ge0.4 grains without Ni incorporation. In the MILC process, the kind of Ni compound phase changes with the amount of diffusing Ni and the lateral crystallization should be induced by the formation of NiSi2.",
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AU - Itakura, Masaru

AU - Masumori, Syunji

AU - Ohta, Tomohisa

AU - Tomokiyo, Yoshitsugu

AU - Kuwano, Noriyuki

AU - Kanno, Hiroshi

AU - Sadoh, Taizoh

AU - Miyao, Masanobu

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N2 - Ni metal-induced lateral crystallization (Ni-MILC) of amorphous Si0.6Ge0.4 thin films has been investigated by means of scanning electron microscopy and transmission electron microscopy. A pattern of Ni about 5 nm thick was fabricated to cover selective areas of the a-Si0.6Ge0.4 film. Subsequently, the thin film was annealed at 550 °C for various lengths of time. In the area covered with Ni, Ni atoms diffuse into the SiGe film and react with Ge to produce precipitates of Ni2Ge, leaving amorphous Si. In the area outside of the Ni-covered one, on the other hand, crystallization occurs to form aggregates of small Si0.6Ge0.4 grains without Ni incorporation. In the MILC process, the kind of Ni compound phase changes with the amount of diffusing Ni and the lateral crystallization should be induced by the formation of NiSi2.

AB - Ni metal-induced lateral crystallization (Ni-MILC) of amorphous Si0.6Ge0.4 thin films has been investigated by means of scanning electron microscopy and transmission electron microscopy. A pattern of Ni about 5 nm thick was fabricated to cover selective areas of the a-Si0.6Ge0.4 film. Subsequently, the thin film was annealed at 550 °C for various lengths of time. In the area covered with Ni, Ni atoms diffuse into the SiGe film and react with Ge to produce precipitates of Ni2Ge, leaving amorphous Si. In the area outside of the Ni-covered one, on the other hand, crystallization occurs to form aggregates of small Si0.6Ge0.4 grains without Ni incorporation. In the MILC process, the kind of Ni compound phase changes with the amount of diffusing Ni and the lateral crystallization should be induced by the formation of NiSi2.

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