Characterization of n-Type nanocrystalline iron disilicide/intrinsic ultrananocrystalline diamond/amorphous carbon composite/p-Type silicon heterojunctions at low temperatures

Nathaporn Promros, Ryuji Baba, Hirokazu Kishimoto, Phongsaphak Sittimart, Takanori Hanada, Kenji Hanada, Abdelrahman Zkria, Mahmoud Shaban, Tsuyoshi Yoshitake

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    5 Citations (Scopus)

    Abstract

    N-Type nanocrystalline iron disilicide/intrinsic ultrananocrystalline diamond/amorphous carbon composite/p-type Si heterojunction photodiodes were successfully fabricated using pulsed laser deposition and coaxial arc plasma deposition. Their current-voltage (I-V) curves were measured at low temperatures ranging from 300 K to 60 K. The possible carrier conduction mechanisms were determined by analyzing the dark I-V curves. The NIR photodetections were evaluated using a 1.31 μm laser. The dominant conduction mechanisms through the heterojunctions from 300 K to 200 K and 180 K to 60 K were recombination and trapassisted multi-step tunneling processes, respectively. At 60 K, the difference in ratio between photocurrent and dark current was three orders of magnitude, with detectivity of 1.10×1011 cm Hz1/2/W at zero bias voltage, which was comparable to the existing values of commercial NIR photodiodes at the same temperature.

    Original languageEnglish
    Pages (from-to)579-584
    Number of pages6
    JournalJournal of Nanoelectronics and Optoelectronics
    Volume11
    Issue number5
    DOIs
    Publication statusPublished - 2016

    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

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