Characterization of near-infrared n-type Β-FeSi2/p-type Si heterojunction photodiodes at room temperature

Mahmoud Shaban, Keita Nomoto, Shota Izumi, Tsuyoshi Yoshitake

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    Abstract

    n -type Β -FeSi2 /p -type Si heterojunctions were fabricated from Β -FeSi2 films epitaxially grown on Si(111) by facing-target direct-current sputtering. Sharp film-substrate interfaces were confirmed by scanning electron microscopy. The current-voltage and photoresponse characteristics were measured at room temperature. They exhibited good rectifying properties and a change of approximately one order of magnitude in the current at a bias voltage of -1 V under illumination by a 6 mW, 1.31 μm laser. The estimated detectivity was 1.5× 109 cm Hz W at 1.31 μm. The results suggest that the Β -FeSi2 /Si heterojunctions can be used as near-infrared photodetectors that are compatible with silicon integrated circuits.

    Original languageEnglish
    Article number222113
    JournalApplied Physics Letters
    Volume94
    Issue number22
    DOIs
    Publication statusPublished - Jun 15 2009

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    All Science Journal Classification (ASJC) codes

    • Physics and Astronomy (miscellaneous)

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