HEMTにおける光応答特性

Translated title of the contribution: Characterization of Optically Illuminated HEMTs

綱島 聡, 木村 俊二, 楢原 浩一, 末光 哲也, 佐野 栄一

Research output: Contribution to journalArticle

Abstract

We investigated the optical response of high electron mobility transistors (HEMTs). We employed a 0.1μm-gate-length InAlAs/InGaAs/InP-based HEMT as a test sample. To clarify the feasibility of the device in fiber-optic communication systems, the wavelength of all optical lights were set to 1.55μm. The dependence of the device on input light intensity was measured togerther with its optical pulse response. For the latter, we employed the electro-optic sampling techniques. We observed the photocurrent of 0.125A/W from the DC measurements, on the other hand, its bandwidth was limited to several GHz. We report these measured results and then discuss the carrier transport mechanism which describes them. Finally, some applications which utilize the merits of optically illuminated HEMTs are described.
Translated title of the contributionCharacterization of Optically Illuminated HEMTs
Original languageJapanese
Pages (from-to)7-12
Number of pages6
JournalIEICE technical report
Volume100
Issue number405
Publication statusPublished - Oct 30 2000

Fingerprint Dive into the research topics of 'Characterization of Optically Illuminated HEMTs'. Together they form a unique fingerprint.

Cite this