Characterization of oxide precipitates in epitaxial InN by transmission electron microscopy

X. Xu; P. Specht; R. Armitage; J. C. Ho; E. R. Weber; C. Kisielowski

doi:10.1063/1.2035330

Characterization of oxide precipitates in epitaxial InN by transmission electron microscopy

X. Xu, P. Specht, R. Armitage, J. C. Ho, E. R. Weber, C. Kisielowski

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

InN thin films have been grown epitaxially on GaN-buffered sapphire substrates by molecular-beam epitaxy at 500 °C. A high level of oxygen contamination in the growth chamber led to formation of In2 O3 precipitates in the films. These precipitates were characterized in detail by transmission electron microscopy (TEM). The concentration of In2 O3 was estimated to be less than 0.07 vol % in the present samples of oxygen content ∼0.5 at. %. Cross-sectional TEM investigations revealed that the precipitates adopt a preferred crystallographic orientation within the InN matrix, and show a characteristic diameter of ∼5 nm with average distance of ∼500 nm. These observations suggest the effective solubility of O in InN could be below 1 at. % at 500 °C.

Original language	English
Article number	092102
Journal	Applied Physics Letters
Volume	87
Issue number	9
DOIs	https://doi.org/10.1063/1.2035330
Publication status	Published - Aug 29 2005
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2035330

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title = "Characterization of oxide precipitates in epitaxial InN by transmission electron microscopy",

abstract = "InN thin films have been grown epitaxially on GaN-buffered sapphire substrates by molecular-beam epitaxy at 500 °C. A high level of oxygen contamination in the growth chamber led to formation of In2 O3 precipitates in the films. These precipitates were characterized in detail by transmission electron microscopy (TEM). The concentration of In2 O3 was estimated to be less than 0.07 vol % in the present samples of oxygen content ∼0.5 at. %. Cross-sectional TEM investigations revealed that the precipitates adopt a preferred crystallographic orientation within the InN matrix, and show a characteristic diameter of ∼5 nm with average distance of ∼500 nm. These observations suggest the effective solubility of O in InN could be below 1 at. % at 500 °C.",

author = "X. Xu and P. Specht and R. Armitage and Ho, {J. C.} and Weber, {E. R.} and C. Kisielowski",

note = "Funding Information: This work was financially supported by the Air Force Office of Scientific Research under Contract No. FA9550-04-1-0408 (Program Manager J. Witt) and by the Director, Office of Science, Office of Basic Energy Sciences, Division of Materials Sciences, of the U.S. Department of Energy under Contract No. DE-AC03-76SF00098. The usage of the National Center for Electron Microscopy, LBNL, is greatly appreciated. ",

year = "2005",

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doi = "10.1063/1.2035330",

language = "English",

volume = "87",

journal = "Applied Physics Letters",

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T1 - Characterization of oxide precipitates in epitaxial InN by transmission electron microscopy

AU - Xu, X.

AU - Specht, P.

AU - Armitage, R.

AU - Ho, J. C.

AU - Weber, E. R.

AU - Kisielowski, C.

N1 - Funding Information: This work was financially supported by the Air Force Office of Scientific Research under Contract No. FA9550-04-1-0408 (Program Manager J. Witt) and by the Director, Office of Science, Office of Basic Energy Sciences, Division of Materials Sciences, of the U.S. Department of Energy under Contract No. DE-AC03-76SF00098. The usage of the National Center for Electron Microscopy, LBNL, is greatly appreciated.

PY - 2005/8/29

Y1 - 2005/8/29

N2 - InN thin films have been grown epitaxially on GaN-buffered sapphire substrates by molecular-beam epitaxy at 500 °C. A high level of oxygen contamination in the growth chamber led to formation of In2 O3 precipitates in the films. These precipitates were characterized in detail by transmission electron microscopy (TEM). The concentration of In2 O3 was estimated to be less than 0.07 vol % in the present samples of oxygen content ∼0.5 at. %. Cross-sectional TEM investigations revealed that the precipitates adopt a preferred crystallographic orientation within the InN matrix, and show a characteristic diameter of ∼5 nm with average distance of ∼500 nm. These observations suggest the effective solubility of O in InN could be below 1 at. % at 500 °C.

AB - InN thin films have been grown epitaxially on GaN-buffered sapphire substrates by molecular-beam epitaxy at 500 °C. A high level of oxygen contamination in the growth chamber led to formation of In2 O3 precipitates in the films. These precipitates were characterized in detail by transmission electron microscopy (TEM). The concentration of In2 O3 was estimated to be less than 0.07 vol % in the present samples of oxygen content ∼0.5 at. %. Cross-sectional TEM investigations revealed that the precipitates adopt a preferred crystallographic orientation within the InN matrix, and show a characteristic diameter of ∼5 nm with average distance of ∼500 nm. These observations suggest the effective solubility of O in InN could be below 1 at. % at 500 °C.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

M1 - 092102

ER -

Characterization of oxide precipitates in epitaxial InN by transmission electron microscopy

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