Characterization of phosphorus in layer semiconductor GaSe

S. Shigetomi, T. Ikari, Hiroshi Nakashima

    Research output: Contribution to journalArticle

    10 Citations (Scopus)

    Abstract

    Radiative recombination mechanisms in P-doped p-GaSe have been investigated by using photoluminescence (PL) measurements. The PL spectra related to impurity level are dominated by the emission band at 1.355 eV. The temperature dependences of the PL intensity, peak energy, and full-width at half-maximum are characterized by the configuration coordinate model. The acceptor level located at about 0.45 eV above the valence band is detected by using Hall effect and deep-level transient spectroscopy measurements. This acceptor level is probably associated with the 1.355 eV emission band formed by P atoms.

    Original languageEnglish
    Pages (from-to)79-84
    Number of pages6
    JournalJournal of Luminescence
    Volume79
    Issue number2
    DOIs
    Publication statusPublished - Aug 28 1998

    Fingerprint

    Semiconductors
    Phosphorus
    Genetic Recombination
    phosphorus
    Spectrum Analysis
    Photoluminescence
    Semiconductor materials
    Temperature
    photoluminescence
    Deep level transient spectroscopy
    Hall effect
    Valence bands
    Full width at half maximum
    radiative recombination
    Impurities
    Atoms
    valence
    impurities
    temperature dependence
    gallium selenide

    All Science Journal Classification (ASJC) codes

    • Biophysics
    • Atomic and Molecular Physics, and Optics
    • Chemistry(all)
    • Biochemistry
    • Condensed Matter Physics

    Cite this

    Characterization of phosphorus in layer semiconductor GaSe. / Shigetomi, S.; Ikari, T.; Nakashima, Hiroshi.

    In: Journal of Luminescence, Vol. 79, No. 2, 28.08.1998, p. 79-84.

    Research output: Contribution to journalArticle

    Shigetomi, S. ; Ikari, T. ; Nakashima, Hiroshi. / Characterization of phosphorus in layer semiconductor GaSe. In: Journal of Luminescence. 1998 ; Vol. 79, No. 2. pp. 79-84.
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