Characterization of phosphorus in layer semiconductor GaSe

S. Shigetomi, T. Ikari, H. Nakashima

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    10 Citations (Scopus)

    Abstract

    Radiative recombination mechanisms in P-doped p-GaSe have been investigated by using photoluminescence (PL) measurements. The PL spectra related to impurity level are dominated by the emission band at 1.355 eV. The temperature dependences of the PL intensity, peak energy, and full-width at half-maximum are characterized by the configuration coordinate model. The acceptor level located at about 0.45 eV above the valence band is detected by using Hall effect and deep-level transient spectroscopy measurements. This acceptor level is probably associated with the 1.355 eV emission band formed by P atoms.

    Original languageEnglish
    Pages (from-to)79-84
    Number of pages6
    JournalJournal of Luminescence
    Volume79
    Issue number2
    DOIs
    Publication statusPublished - Aug 28 1998

    All Science Journal Classification (ASJC) codes

    • Biophysics
    • Biochemistry
    • Chemistry(all)
    • Atomic and Molecular Physics, and Optics
    • Condensed Matter Physics

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