Characterization of residual strain in Si ingots grown by the seed-cast method

Karolin Jiptner, Masayuki Fukuzawa, Yoshiji Miyamura, Hirofumi Harada, Koichi Kakimoto, Takashi Sekiguchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

The residual strain distribution in cast-grown mono-like Si ingots is analyzed. The effect of the crucible during solidification and the influence of different cooling rates is described. To clarify in which process steps residual strain accumulates, several Si ingots were grown in a laboratory scale furnace (Ø100 mm) using different cooling conditions after completion of the solidification. For the cooling, two different cooling rates were distinguished: fast cooling (12°C/min) and slow cooling (5°C/min). It was found that changes in cooling gradients greatly influence the amount of residual strain. The results show that slow cooling in any temperature range leads to strain reduction. The greatest reduction could be found when the temperature gradient was changed to slow cooling in the high temperature region.

Original languageEnglish
Title of host publicationGettering and Defect Engineering in Semiconductor Technology XV
PublisherTrans Tech Publications Ltd
Pages94-99
Number of pages6
ISBN (Print)9783037858240
DOIs
Publication statusPublished - Jan 1 2014
Event15th Gettering and Defect Engineering in Semiconductor Technology, GADEST 2013 - Oxford, United Kingdom
Duration: Sep 22 2013Sep 27 2013

Publication series

NameSolid State Phenomena
Volume205-206
ISSN (Print)1012-0394

Other

Other15th Gettering and Defect Engineering in Semiconductor Technology, GADEST 2013
CountryUnited Kingdom
CityOxford
Period9/22/139/27/13

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

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