Characterization of Si thin films doped by wet-chemical laser processing

Akira Suwa, Nozomu Tanaka, Taizoh Sadoh, Daisuke Nakamura, Hiroshi Ikenoue

Research output: Contribution to journalConference articlepeer-review

3 Citations (Scopus)

Abstract

In this paper, we report on the characterization of Si thin films doped by wet-chemical laser processing. Using this method, implantation and dopant activation can be performed simultaneously. After laser doping, the mobility, carrier concentration, and resistivity of the films were 74 cm2/V·s, 5.5 × 1017 cm-3, and 0.15 Ω·cm, respectively.

Original languageEnglish
Pages (from-to)430-432
Number of pages3
JournalDigest of Technical Papers - SID International Symposium
Volume48
Issue number1
DOIs
Publication statusPublished - Jan 1 2017
EventSID Symposium, Seminar, and Exhibition 2017, Display Week 2017 - Los Angeles, United States
Duration: May 21 2017May 26 2017

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Fingerprint Dive into the research topics of 'Characterization of Si thin films doped by wet-chemical laser processing'. Together they form a unique fingerprint.

Cite this