In this paper, we report on the characterization of Si thin films doped by wet-chemical laser processing. Using this method, implantation and dopant activation can be performed simultaneously. After laser doping, the mobility, carrier concentration, and resistivity of the films were 74 cm2/V·s, 5.5 × 1017 cm-3, and 0.15 Ω·cm, respectively.
|Number of pages||3|
|Journal||Digest of Technical Papers - SID International Symposium|
|Publication status||Published - Jan 1 2017|
|Event||SID Symposium, Seminar, and Exhibition 2017, Display Week 2017 - Los Angeles, United States|
Duration: May 21 2017 → May 26 2017
All Science Journal Classification (ASJC) codes