Characterization of SiGe layer on insulator by in-plane diffraction method

M. Imai, Y. Miyamura, D. Murata, A. Ogi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Four types of SGOI (SiGe on Insulator) wafers were fabricated by the combination of SiGe epitaxial growth, SIMOX (Separation by Implanted Oxygen) processes and oxidation. By the cross-sectional TEM (Transmission Electron Microscopy) and EDS (Energy Dispersive Spectroscopy), it is confirmed that each wafer has smooth interface between a top layer (Si or SiGe) and a BOX (buried oxide) layer and Ge atoms in SiGe layer distribute homogeneously for SGOI_A and SGOI_B. Using high-resolution X-ray diffractometry, the crystallographic properties of SiGe layer are characterized with in-plane and out of plane diffraction methods. The lattice constants are calculated for the planes of perpendicular and parallel to wafer surface and the degree of relaxation are estimated for the SiGe layer of each wafer. The rocking curve measurements reveal that the lattice turbulence of SiGe layer is influenced by SIMOX process conditions, Ge content and the layer thickness.

Original languageEnglish
Title of host publicationGettering and Defect Engineering in Semiconductor Technology XI - GADEST 2005
EditorsB. Pichaud, A. Claverie, D. Alquier, H. Richter, M. Kittler, H. Richter, M. Kittler
PublisherTrans Tech Publications Ltd
Pages451-456
Number of pages6
ISBN (Print)9783908451136
DOIs
Publication statusPublished - 2005
Externally publishedYes
Event11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology, GADEST 2005 - Giens, Marseilles, France
Duration: Sep 25 2005Sep 30 2005

Publication series

NameSolid State Phenomena
Volume108-109
ISSN (Print)1012-0394
ISSN (Electronic)1662-9779

Conference

Conference11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology, GADEST 2005
Country/TerritoryFrance
CityGiens, Marseilles
Period9/25/059/30/05

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

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