Growth mechanisms of crystalline tantalum nitride (TaN) films have been studied on silicon substrates using a pulsed Nd:YAG laser deposition method. Experimental results show that the properties of the TaN films strongly depend on the substrate temperatures and nitrogen gas pressures. This suggests that both the phase reaction in the plasma plume and the surface reaction on the substrate are important for preparing crystalline TaN films.
|Number of pages||4|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||4 A|
|Publication status||Published - Apr 2001|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)