Characterization of tantalum nitride thin films fabricated by pulsed Nd: YAG laser deposition method

H. Kawasaki; K. Doi; J. Namba; Y. Suda; T. Ohshima; K. Ebihara

doi:10.1143/jjap.40.2391

Characterization of tantalum nitride thin films fabricated by pulsed Nd: YAG laser deposition method

H. Kawasaki, K. Doi, J. Namba, Y. Suda, T. Ohshima, K. Ebihara

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Growth mechanisms of crystalline tantalum nitride (TaN) films have been studied on silicon substrates using a pulsed Nd:YAG laser deposition method. Experimental results show that the properties of the TaN films strongly depend on the substrate temperatures and nitrogen gas pressures. This suggests that both the phase reaction in the plasma plume and the surface reaction on the substrate are important for preparing crystalline TaN films.

Original language	English
Pages (from-to)	2391-2394
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	40
Issue number	4 A
DOIs	https://doi.org/10.1143/jjap.40.2391
Publication status	Published - Apr 2001
Externally published	Yes

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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abstract = "Growth mechanisms of crystalline tantalum nitride (TaN) films have been studied on silicon substrates using a pulsed Nd:YAG laser deposition method. Experimental results show that the properties of the TaN films strongly depend on the substrate temperatures and nitrogen gas pressures. This suggests that both the phase reaction in the plasma plume and the surface reaction on the substrate are important for preparing crystalline TaN films.",

author = "H. Kawasaki and K. Doi and J. Namba and Y. Suda and T. Ohshima and K. Ebihara",

year = "2001",

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T1 - Characterization of tantalum nitride thin films fabricated by pulsed Nd

T2 - YAG laser deposition method

AU - Kawasaki, H.

AU - Doi, K.

AU - Namba, J.

AU - Suda, Y.

AU - Ohshima, T.

AU - Ebihara, K.

PY - 2001/4

Y1 - 2001/4

N2 - Growth mechanisms of crystalline tantalum nitride (TaN) films have been studied on silicon substrates using a pulsed Nd:YAG laser deposition method. Experimental results show that the properties of the TaN films strongly depend on the substrate temperatures and nitrogen gas pressures. This suggests that both the phase reaction in the plasma plume and the surface reaction on the substrate are important for preparing crystalline TaN films.

AB - Growth mechanisms of crystalline tantalum nitride (TaN) films have been studied on silicon substrates using a pulsed Nd:YAG laser deposition method. Experimental results show that the properties of the TaN films strongly depend on the substrate temperatures and nitrogen gas pressures. This suggests that both the phase reaction in the plasma plume and the surface reaction on the substrate are important for preparing crystalline TaN films.

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

IS - 4 A

ER -

Characterization of tantalum nitride thin films fabricated by pulsed Nd: YAG laser deposition method

Abstract

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