Characterization of tantalum nitride thin films fabricated by pulsed Nd: YAG laser deposition method

H. Kawasaki, K. Doi, J. Namba, Y. Suda, T. Ohshima, K. Ebihara

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

Growth mechanisms of crystalline tantalum nitride (TaN) films have been studied on silicon substrates using a pulsed Nd:YAG laser deposition method. Experimental results show that the properties of the TaN films strongly depend on the substrate temperatures and nitrogen gas pressures. This suggests that both the phase reaction in the plasma plume and the surface reaction on the substrate are important for preparing crystalline TaN films.

Original languageEnglish
Pages (from-to)2391-2394
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume40
Issue number4 A
DOIs
Publication statusPublished - Apr 2001
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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