Abstract
Electrical properties of two-dimensional hole gas (2DHG) at GaN/Al 0.23Ga0.77N heterointerface have been investigated. Existence of 2DHG at the interface is confirmed by capacitance-voltage and Hall Effect measurement. We have discussed transport mechanism of 2DHG by comparison with hole generated by conventional Mg impurity, based on experimental evaluations by X-ray diffraction, transmission electron microscope, atomic force microscope, secondary ion mass spectroscopy, and temperature dependence Hall Effect measurements.
| Original language | English |
|---|---|
| Title of host publication | 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings |
| Pages | 155-158 |
| Number of pages | 4 |
| DOIs | |
| Publication status | Published - Dec 1 2013 |
| Externally published | Yes |
| Event | 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Columbus, OH, United States Duration: Oct 27 2013 → Oct 29 2013 |
Publication series
| Name | 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings |
|---|
Other
| Other | 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 |
|---|---|
| Country | United States |
| City | Columbus, OH |
| Period | 10/27/13 → 10/29/13 |
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All Science Journal Classification (ASJC) codes
- Computer Science Applications
- Electrical and Electronic Engineering
Cite this
Characterization of two-dimensional hole gas at GaN/AlGaN heterointerface. / Liu, Pucheng; Kakushima, Kuniyuki; Iwai, Hiroshi; Nakajima, Akira; Makino, Toshiharu; Ogura, Masahiro; Nishizawa, Shinichi; Ohashi, Hiromichi.
1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings. 2013. p. 155-158 6695585 (1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Characterization of two-dimensional hole gas at GaN/AlGaN heterointerface
AU - Liu, Pucheng
AU - Kakushima, Kuniyuki
AU - Iwai, Hiroshi
AU - Nakajima, Akira
AU - Makino, Toshiharu
AU - Ogura, Masahiro
AU - Nishizawa, Shinichi
AU - Ohashi, Hiromichi
PY - 2013/12/1
Y1 - 2013/12/1
N2 - Electrical properties of two-dimensional hole gas (2DHG) at GaN/Al 0.23Ga0.77N heterointerface have been investigated. Existence of 2DHG at the interface is confirmed by capacitance-voltage and Hall Effect measurement. We have discussed transport mechanism of 2DHG by comparison with hole generated by conventional Mg impurity, based on experimental evaluations by X-ray diffraction, transmission electron microscope, atomic force microscope, secondary ion mass spectroscopy, and temperature dependence Hall Effect measurements.
AB - Electrical properties of two-dimensional hole gas (2DHG) at GaN/Al 0.23Ga0.77N heterointerface have been investigated. Existence of 2DHG at the interface is confirmed by capacitance-voltage and Hall Effect measurement. We have discussed transport mechanism of 2DHG by comparison with hole generated by conventional Mg impurity, based on experimental evaluations by X-ray diffraction, transmission electron microscope, atomic force microscope, secondary ion mass spectroscopy, and temperature dependence Hall Effect measurements.
UR - http://www.scopus.com/inward/record.url?scp=84893614389&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84893614389&partnerID=8YFLogxK
U2 - 10.1109/WiPDA.2013.6695585
DO - 10.1109/WiPDA.2013.6695585
M3 - Conference contribution
AN - SCOPUS:84893614389
SN - 9781479911943
T3 - 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings
SP - 155
EP - 158
BT - 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings
ER -