Characterization of two-dimensional hole gas at GaN/AlGaN heterointerface

Pucheng Liu, Kuniyuki Kakushima, Hiroshi Iwai, Akira Nakajima, Toshiharu Makino, Masahiro Ogura, Shinichi Nishizawa, Hiromichi Ohashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Electrical properties of two-dimensional hole gas (2DHG) at GaN/Al 0.23Ga0.77N heterointerface have been investigated. Existence of 2DHG at the interface is confirmed by capacitance-voltage and Hall Effect measurement. We have discussed transport mechanism of 2DHG by comparison with hole generated by conventional Mg impurity, based on experimental evaluations by X-ray diffraction, transmission electron microscope, atomic force microscope, secondary ion mass spectroscopy, and temperature dependence Hall Effect measurements.

Original languageEnglish
Title of host publication1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings
Pages155-158
Number of pages4
DOIs
Publication statusPublished - Dec 1 2013
Externally publishedYes
Event1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Columbus, OH, United States
Duration: Oct 27 2013Oct 29 2013

Publication series

Name1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings

Other

Other1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013
CountryUnited States
CityColumbus, OH
Period10/27/1310/29/13

Fingerprint

Hall effect
Gases
Electric properties
Microscopes
Capacitance
Electron microscopes
Spectroscopy
Impurities
X ray diffraction
Ions
Electric potential
Temperature

All Science Journal Classification (ASJC) codes

  • Computer Science Applications
  • Electrical and Electronic Engineering

Cite this

Liu, P., Kakushima, K., Iwai, H., Nakajima, A., Makino, T., Ogura, M., ... Ohashi, H. (2013). Characterization of two-dimensional hole gas at GaN/AlGaN heterointerface. In 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings (pp. 155-158). [6695585] (1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings). https://doi.org/10.1109/WiPDA.2013.6695585

Characterization of two-dimensional hole gas at GaN/AlGaN heterointerface. / Liu, Pucheng; Kakushima, Kuniyuki; Iwai, Hiroshi; Nakajima, Akira; Makino, Toshiharu; Ogura, Masahiro; Nishizawa, Shinichi; Ohashi, Hiromichi.

1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings. 2013. p. 155-158 6695585 (1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Liu, P, Kakushima, K, Iwai, H, Nakajima, A, Makino, T, Ogura, M, Nishizawa, S & Ohashi, H 2013, Characterization of two-dimensional hole gas at GaN/AlGaN heterointerface. in 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings., 6695585, 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings, pp. 155-158, 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013, Columbus, OH, United States, 10/27/13. https://doi.org/10.1109/WiPDA.2013.6695585
Liu P, Kakushima K, Iwai H, Nakajima A, Makino T, Ogura M et al. Characterization of two-dimensional hole gas at GaN/AlGaN heterointerface. In 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings. 2013. p. 155-158. 6695585. (1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings). https://doi.org/10.1109/WiPDA.2013.6695585
Liu, Pucheng ; Kakushima, Kuniyuki ; Iwai, Hiroshi ; Nakajima, Akira ; Makino, Toshiharu ; Ogura, Masahiro ; Nishizawa, Shinichi ; Ohashi, Hiromichi. / Characterization of two-dimensional hole gas at GaN/AlGaN heterointerface. 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings. 2013. pp. 155-158 (1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings).
@inproceedings{6d7ede40c5d841d0af168a534fbda0f0,
title = "Characterization of two-dimensional hole gas at GaN/AlGaN heterointerface",
abstract = "Electrical properties of two-dimensional hole gas (2DHG) at GaN/Al 0.23Ga0.77N heterointerface have been investigated. Existence of 2DHG at the interface is confirmed by capacitance-voltage and Hall Effect measurement. We have discussed transport mechanism of 2DHG by comparison with hole generated by conventional Mg impurity, based on experimental evaluations by X-ray diffraction, transmission electron microscope, atomic force microscope, secondary ion mass spectroscopy, and temperature dependence Hall Effect measurements.",
author = "Pucheng Liu and Kuniyuki Kakushima and Hiroshi Iwai and Akira Nakajima and Toshiharu Makino and Masahiro Ogura and Shinichi Nishizawa and Hiromichi Ohashi",
year = "2013",
month = "12",
day = "1",
doi = "10.1109/WiPDA.2013.6695585",
language = "English",
isbn = "9781479911943",
series = "1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings",
pages = "155--158",
booktitle = "1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings",

}

TY - GEN

T1 - Characterization of two-dimensional hole gas at GaN/AlGaN heterointerface

AU - Liu, Pucheng

AU - Kakushima, Kuniyuki

AU - Iwai, Hiroshi

AU - Nakajima, Akira

AU - Makino, Toshiharu

AU - Ogura, Masahiro

AU - Nishizawa, Shinichi

AU - Ohashi, Hiromichi

PY - 2013/12/1

Y1 - 2013/12/1

N2 - Electrical properties of two-dimensional hole gas (2DHG) at GaN/Al 0.23Ga0.77N heterointerface have been investigated. Existence of 2DHG at the interface is confirmed by capacitance-voltage and Hall Effect measurement. We have discussed transport mechanism of 2DHG by comparison with hole generated by conventional Mg impurity, based on experimental evaluations by X-ray diffraction, transmission electron microscope, atomic force microscope, secondary ion mass spectroscopy, and temperature dependence Hall Effect measurements.

AB - Electrical properties of two-dimensional hole gas (2DHG) at GaN/Al 0.23Ga0.77N heterointerface have been investigated. Existence of 2DHG at the interface is confirmed by capacitance-voltage and Hall Effect measurement. We have discussed transport mechanism of 2DHG by comparison with hole generated by conventional Mg impurity, based on experimental evaluations by X-ray diffraction, transmission electron microscope, atomic force microscope, secondary ion mass spectroscopy, and temperature dependence Hall Effect measurements.

UR - http://www.scopus.com/inward/record.url?scp=84893614389&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84893614389&partnerID=8YFLogxK

U2 - 10.1109/WiPDA.2013.6695585

DO - 10.1109/WiPDA.2013.6695585

M3 - Conference contribution

AN - SCOPUS:84893614389

SN - 9781479911943

T3 - 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings

SP - 155

EP - 158

BT - 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings

ER -