TY - GEN
T1 - Characterization of two-dimensional hole gas at GaN/AlGaN heterointerface
AU - Liu, Pucheng
AU - Kakushima, Kuniyuki
AU - Iwai, Hiroshi
AU - Nakajima, Akira
AU - Makino, Toshiharu
AU - Ogura, Masahiro
AU - Nishizawa, Shinichi
AU - Ohashi, Hiromichi
PY - 2013
Y1 - 2013
N2 - Electrical properties of two-dimensional hole gas (2DHG) at GaN/Al 0.23Ga0.77N heterointerface have been investigated. Existence of 2DHG at the interface is confirmed by capacitance-voltage and Hall Effect measurement. We have discussed transport mechanism of 2DHG by comparison with hole generated by conventional Mg impurity, based on experimental evaluations by X-ray diffraction, transmission electron microscope, atomic force microscope, secondary ion mass spectroscopy, and temperature dependence Hall Effect measurements.
AB - Electrical properties of two-dimensional hole gas (2DHG) at GaN/Al 0.23Ga0.77N heterointerface have been investigated. Existence of 2DHG at the interface is confirmed by capacitance-voltage and Hall Effect measurement. We have discussed transport mechanism of 2DHG by comparison with hole generated by conventional Mg impurity, based on experimental evaluations by X-ray diffraction, transmission electron microscope, atomic force microscope, secondary ion mass spectroscopy, and temperature dependence Hall Effect measurements.
UR - http://www.scopus.com/inward/record.url?scp=84893614389&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84893614389&partnerID=8YFLogxK
U2 - 10.1109/WiPDA.2013.6695585
DO - 10.1109/WiPDA.2013.6695585
M3 - Conference contribution
AN - SCOPUS:84893614389
SN - 9781479911943
T3 - 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings
SP - 155
EP - 158
BT - 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings
T2 - 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013
Y2 - 27 October 2013 through 29 October 2013
ER -