Characterization of ultrathin CaF2films heteroepitaxially grown on Si(111) surfaces

Koji Ando, Koichiro Saiki, Yasuhiro Sato, Atsushi Koma, Tanemasa Asano, Hiroshi Ishiwara, Seijiro Furukawa

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Abstract

Ultrathin CaF2films heteroepitaxially grown on Si(111) substrates have been characterized by low-energy electron energy loss spectroscopy and Auger electron spectroscopy. The measured specimens were transferred from the growth chamber to an analyzing chamber located at a distant facility without suffering any contamination by use of a newly developed portable vacuum chamber. It has been proved from the measurements that a CaF2film of good quality grows even from the very initial stage of epitaxy.

Original languageEnglish
Pages (from-to)L170-L172
JournalJapanese Journal of Applied Physics
Volume27
Issue number2A
DOIs
Publication statusPublished - Feb 1988

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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    Ando, K., Saiki, K., Sato, Y., Koma, A., Asano, T., Ishiwara, H., & Furukawa, S. (1988). Characterization of ultrathin CaF2films heteroepitaxially grown on Si(111) surfaces. Japanese Journal of Applied Physics, 27(2A), L170-L172. https://doi.org/10.1143/JJAP.27.L170