TY - JOUR
T1 - Characterization of ultrathin CaF2films heteroepitaxially grown on Si(111) surfaces
AU - Ando, Koji
AU - Saiki, Koichiro
AU - Sato, Yasuhiro
AU - Koma, Atsushi
AU - Asano, Tanemasa
AU - Ishiwara, Hiroshi
AU - Furukawa, Seijiro
PY - 1988/2
Y1 - 1988/2
N2 - Ultrathin CaF2films heteroepitaxially grown on Si(111) substrates have been characterized by low-energy electron energy loss spectroscopy and Auger electron spectroscopy. The measured specimens were transferred from the growth chamber to an analyzing chamber located at a distant facility without suffering any contamination by use of a newly developed portable vacuum chamber. It has been proved from the measurements that a CaF2film of good quality grows even from the very initial stage of epitaxy.
AB - Ultrathin CaF2films heteroepitaxially grown on Si(111) substrates have been characterized by low-energy electron energy loss spectroscopy and Auger electron spectroscopy. The measured specimens were transferred from the growth chamber to an analyzing chamber located at a distant facility without suffering any contamination by use of a newly developed portable vacuum chamber. It has been proved from the measurements that a CaF2film of good quality grows even from the very initial stage of epitaxy.
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U2 - 10.1143/JJAP.27.L170
DO - 10.1143/JJAP.27.L170
M3 - Article
AN - SCOPUS:0023966170
SN - 0021-4922
VL - 27
SP - L170-L172
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 2A
ER -