Characterization of ultrathin CaF2films heteroepitaxially grown on Si(111) surfaces

Koji Ando, Koichiro Saiki, Yasuhiro Sato, Atsushi Koma, Tanemasa Asano, Hiroshi Ishiwara, Seijiro Furukawa

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Ultrathin CaF2films heteroepitaxially grown on Si(111) substrates have been characterized by low-energy electron energy loss spectroscopy and Auger electron spectroscopy. The measured specimens were transferred from the growth chamber to an analyzing chamber located at a distant facility without suffering any contamination by use of a newly developed portable vacuum chamber. It has been proved from the measurements that a CaF2film of good quality grows even from the very initial stage of epitaxy.

Original languageEnglish
Pages (from-to)L170-L172
JournalJapanese Journal of Applied Physics
Volume27
Issue number2A
DOIs
Publication statusPublished - Jan 1 1988
Externally publishedYes

Fingerprint

phytotrons
Electron energy loss spectroscopy
Auger electron spectroscopy
vacuum chambers
Epitaxial growth
epitaxy
Auger spectroscopy
electron spectroscopy
contamination
Contamination
energy dissipation
chambers
Vacuum
electron energy
Substrates
spectroscopy
energy

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Ando, K., Saiki, K., Sato, Y., Koma, A., Asano, T., Ishiwara, H., & Furukawa, S. (1988). Characterization of ultrathin CaF2films heteroepitaxially grown on Si(111) surfaces. Japanese Journal of Applied Physics, 27(2A), L170-L172. https://doi.org/10.1143/JJAP.27.L170

Characterization of ultrathin CaF2films heteroepitaxially grown on Si(111) surfaces. / Ando, Koji; Saiki, Koichiro; Sato, Yasuhiro; Koma, Atsushi; Asano, Tanemasa; Ishiwara, Hiroshi; Furukawa, Seijiro.

In: Japanese Journal of Applied Physics, Vol. 27, No. 2A, 01.01.1988, p. L170-L172.

Research output: Contribution to journalArticle

Ando, K, Saiki, K, Sato, Y, Koma, A, Asano, T, Ishiwara, H & Furukawa, S 1988, 'Characterization of ultrathin CaF2films heteroepitaxially grown on Si(111) surfaces', Japanese Journal of Applied Physics, vol. 27, no. 2A, pp. L170-L172. https://doi.org/10.1143/JJAP.27.L170
Ando, Koji ; Saiki, Koichiro ; Sato, Yasuhiro ; Koma, Atsushi ; Asano, Tanemasa ; Ishiwara, Hiroshi ; Furukawa, Seijiro. / Characterization of ultrathin CaF2films heteroepitaxially grown on Si(111) surfaces. In: Japanese Journal of Applied Physics. 1988 ; Vol. 27, No. 2A. pp. L170-L172.
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