Characterizations of mesa structural near-infrared n-type nanocrystalline-FeSi2/p-type si heterojunction photodiodes at low temperatures

Nathaporn Promros, Ryuhei Iwasaki, Suguru Funasaki, Kyohei Yamashita, Tsuyoshi Yoshitake

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    In order to reduce the parasitic capacitance, mesa structural n-type NC-FeSi2/p-type Si heterojunctions were fabricated by photolithography. Their current-voltage characteristics were measured in the dark and under illumination using a 1.31 μm laser in the temperature range of 60 - 300 K. Their junction capacitance density was evidently reduced as compared with that of the normal structural diodes. The dark current was markedly reduced with a decrease in the temperature. At 60 K, a rectifying current ratio in the dark became more than five orders of magnitude at ±1V. The ratio of the photocurrent to the dark current was dramatically enhanced to be approximately two orders of magnitude, and the detectivity was calculated to be 1.5 × 1011 cmHz1/2/W at -1V. The obtained results showed a remarkable improvement in the device performance as compared with those at 300 K.

    Original languageEnglish
    Title of host publicationMulti-Functional Materials and Structures IV
    Pages217-220
    Number of pages4
    DOIs
    Publication statusPublished - 2013
    Event4th International Conference on Multi-Functional Materials and Structures, MFMS 2013 - Sathorn-Taksin, Bangkok, Thailand
    Duration: Jul 14 2013Jul 17 2013

    Publication series

    NameAdvanced Materials Research
    Volume747
    ISSN (Print)1022-6680

    Other

    Other4th International Conference on Multi-Functional Materials and Structures, MFMS 2013
    CountryThailand
    CitySathorn-Taksin, Bangkok
    Period7/14/137/17/13

    All Science Journal Classification (ASJC) codes

    • Engineering(all)

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