Abstract
In order to reduce the parasitic capacitance, mesa structural n-type NC-FeSi2/p-type Si heterojunctions were fabricated by photolithography. Their current-voltage characteristics were measured in the dark and under illumination using a 1.31 μm laser in the temperature range of 60 - 300 K. Their junction capacitance density was evidently reduced as compared with that of the normal structural diodes. The dark current was markedly reduced with a decrease in the temperature. At 60 K, a rectifying current ratio in the dark became more than five orders of magnitude at ±1V. The ratio of the photocurrent to the dark current was dramatically enhanced to be approximately two orders of magnitude, and the detectivity was calculated to be 1.5 × 1011 cmHz1/2/W at -1V. The obtained results showed a remarkable improvement in the device performance as compared with those at 300 K.
| Original language | English |
|---|---|
| Title of host publication | Multi-Functional Materials and Structures IV |
| Pages | 217-220 |
| Number of pages | 4 |
| DOIs | |
| Publication status | Published - Oct 4 2013 |
| Event | 4th International Conference on Multi-Functional Materials and Structures, MFMS 2013 - Sathorn-Taksin, Bangkok, Thailand Duration: Jul 14 2013 → Jul 17 2013 |
Publication series
| Name | Advanced Materials Research |
|---|---|
| Volume | 747 |
| ISSN (Print) | 1022-6680 |
Other
| Other | 4th International Conference on Multi-Functional Materials and Structures, MFMS 2013 |
|---|---|
| Country | Thailand |
| City | Sathorn-Taksin, Bangkok |
| Period | 7/14/13 → 7/17/13 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
Cite this
Characterizations of mesa structural near-infrared n-type nanocrystalline-FeSi2/p-type si heterojunction photodiodes at low temperatures. / Promros, Nathaporn; Iwasaki, Ryuhei; Funasaki, Suguru; Yamashita, Kyohei; Yoshitake, Tsuyoshi.
Multi-Functional Materials and Structures IV. 2013. p. 217-220 (Advanced Materials Research; Vol. 747).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Characterizations of mesa structural near-infrared n-type nanocrystalline-FeSi2/p-type si heterojunction photodiodes at low temperatures
AU - Promros, Nathaporn
AU - Iwasaki, Ryuhei
AU - Funasaki, Suguru
AU - Yamashita, Kyohei
AU - Yoshitake, Tsuyoshi
PY - 2013/10/4
Y1 - 2013/10/4
N2 - In order to reduce the parasitic capacitance, mesa structural n-type NC-FeSi2/p-type Si heterojunctions were fabricated by photolithography. Their current-voltage characteristics were measured in the dark and under illumination using a 1.31 μm laser in the temperature range of 60 - 300 K. Their junction capacitance density was evidently reduced as compared with that of the normal structural diodes. The dark current was markedly reduced with a decrease in the temperature. At 60 K, a rectifying current ratio in the dark became more than five orders of magnitude at ±1V. The ratio of the photocurrent to the dark current was dramatically enhanced to be approximately two orders of magnitude, and the detectivity was calculated to be 1.5 × 1011 cmHz1/2/W at -1V. The obtained results showed a remarkable improvement in the device performance as compared with those at 300 K.
AB - In order to reduce the parasitic capacitance, mesa structural n-type NC-FeSi2/p-type Si heterojunctions were fabricated by photolithography. Their current-voltage characteristics were measured in the dark and under illumination using a 1.31 μm laser in the temperature range of 60 - 300 K. Their junction capacitance density was evidently reduced as compared with that of the normal structural diodes. The dark current was markedly reduced with a decrease in the temperature. At 60 K, a rectifying current ratio in the dark became more than five orders of magnitude at ±1V. The ratio of the photocurrent to the dark current was dramatically enhanced to be approximately two orders of magnitude, and the detectivity was calculated to be 1.5 × 1011 cmHz1/2/W at -1V. The obtained results showed a remarkable improvement in the device performance as compared with those at 300 K.
UR - http://www.scopus.com/inward/record.url?scp=84884743724&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84884743724&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/AMR.747.217
DO - 10.4028/www.scientific.net/AMR.747.217
M3 - Conference contribution
AN - SCOPUS:84884743724
SN - 9783037857717
T3 - Advanced Materials Research
SP - 217
EP - 220
BT - Multi-Functional Materials and Structures IV
ER -