TY - GEN
T1 - Characterizations of mesa structural near-infrared n-type nanocrystalline-FeSi2/p-type si heterojunction photodiodes at low temperatures
AU - Promros, Nathaporn
AU - Iwasaki, Ryuhei
AU - Funasaki, Suguru
AU - Yamashita, Kyohei
AU - Yoshitake, Tsuyoshi
PY - 2013
Y1 - 2013
N2 - In order to reduce the parasitic capacitance, mesa structural n-type NC-FeSi2/p-type Si heterojunctions were fabricated by photolithography. Their current-voltage characteristics were measured in the dark and under illumination using a 1.31 μm laser in the temperature range of 60 - 300 K. Their junction capacitance density was evidently reduced as compared with that of the normal structural diodes. The dark current was markedly reduced with a decrease in the temperature. At 60 K, a rectifying current ratio in the dark became more than five orders of magnitude at ±1V. The ratio of the photocurrent to the dark current was dramatically enhanced to be approximately two orders of magnitude, and the detectivity was calculated to be 1.5 × 1011 cmHz1/2/W at -1V. The obtained results showed a remarkable improvement in the device performance as compared with those at 300 K.
AB - In order to reduce the parasitic capacitance, mesa structural n-type NC-FeSi2/p-type Si heterojunctions were fabricated by photolithography. Their current-voltage characteristics were measured in the dark and under illumination using a 1.31 μm laser in the temperature range of 60 - 300 K. Their junction capacitance density was evidently reduced as compared with that of the normal structural diodes. The dark current was markedly reduced with a decrease in the temperature. At 60 K, a rectifying current ratio in the dark became more than five orders of magnitude at ±1V. The ratio of the photocurrent to the dark current was dramatically enhanced to be approximately two orders of magnitude, and the detectivity was calculated to be 1.5 × 1011 cmHz1/2/W at -1V. The obtained results showed a remarkable improvement in the device performance as compared with those at 300 K.
UR - http://www.scopus.com/inward/record.url?scp=84884743724&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84884743724&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/AMR.747.217
DO - 10.4028/www.scientific.net/AMR.747.217
M3 - Conference contribution
AN - SCOPUS:84884743724
SN - 9783037857717
T3 - Advanced Materials Research
SP - 217
EP - 220
BT - Multi-Functional Materials and Structures IV
T2 - 4th International Conference on Multi-Functional Materials and Structures, MFMS 2013
Y2 - 14 July 2013 through 17 July 2013
ER -