Characterizations of mesa structural near-infrared n-type nanocrystalline-FeSi2/p-type si heterojunction photodiodes at low temperatures

Nathaporn Promros, Ryuhei Iwasaki, Suguru Funasaki, Kyohei Yamashita, Tsuyoshi Yoshitake

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    In order to reduce the parasitic capacitance, mesa structural n-type NC-FeSi2/p-type Si heterojunctions were fabricated by photolithography. Their current-voltage characteristics were measured in the dark and under illumination using a 1.31 μm laser in the temperature range of 60 - 300 K. Their junction capacitance density was evidently reduced as compared with that of the normal structural diodes. The dark current was markedly reduced with a decrease in the temperature. At 60 K, a rectifying current ratio in the dark became more than five orders of magnitude at ±1V. The ratio of the photocurrent to the dark current was dramatically enhanced to be approximately two orders of magnitude, and the detectivity was calculated to be 1.5 × 1011 cmHz1/2/W at -1V. The obtained results showed a remarkable improvement in the device performance as compared with those at 300 K.

    Original languageEnglish
    Title of host publicationMulti-Functional Materials and Structures IV
    Pages217-220
    Number of pages4
    DOIs
    Publication statusPublished - Oct 4 2013
    Event4th International Conference on Multi-Functional Materials and Structures, MFMS 2013 - Sathorn-Taksin, Bangkok, Thailand
    Duration: Jul 14 2013Jul 17 2013

    Publication series

    NameAdvanced Materials Research
    Volume747
    ISSN (Print)1022-6680

    Other

    Other4th International Conference on Multi-Functional Materials and Structures, MFMS 2013
    CountryThailand
    CitySathorn-Taksin, Bangkok
    Period7/14/137/17/13

    Fingerprint

    Dark currents
    Photodiodes
    Heterojunctions
    Capacitance
    Infrared radiation
    Photolithography
    Current voltage characteristics
    Photocurrents
    Diodes
    Lighting
    Temperature
    Lasers

    All Science Journal Classification (ASJC) codes

    • Engineering(all)

    Cite this

    Promros, N., Iwasaki, R., Funasaki, S., Yamashita, K., & Yoshitake, T. (2013). Characterizations of mesa structural near-infrared n-type nanocrystalline-FeSi2/p-type si heterojunction photodiodes at low temperatures. In Multi-Functional Materials and Structures IV (pp. 217-220). (Advanced Materials Research; Vol. 747). https://doi.org/10.4028/www.scientific.net/AMR.747.217

    Characterizations of mesa structural near-infrared n-type nanocrystalline-FeSi2/p-type si heterojunction photodiodes at low temperatures. / Promros, Nathaporn; Iwasaki, Ryuhei; Funasaki, Suguru; Yamashita, Kyohei; Yoshitake, Tsuyoshi.

    Multi-Functional Materials and Structures IV. 2013. p. 217-220 (Advanced Materials Research; Vol. 747).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Promros, N, Iwasaki, R, Funasaki, S, Yamashita, K & Yoshitake, T 2013, Characterizations of mesa structural near-infrared n-type nanocrystalline-FeSi2/p-type si heterojunction photodiodes at low temperatures. in Multi-Functional Materials and Structures IV. Advanced Materials Research, vol. 747, pp. 217-220, 4th International Conference on Multi-Functional Materials and Structures, MFMS 2013, Sathorn-Taksin, Bangkok, Thailand, 7/14/13. https://doi.org/10.4028/www.scientific.net/AMR.747.217
    Promros N, Iwasaki R, Funasaki S, Yamashita K, Yoshitake T. Characterizations of mesa structural near-infrared n-type nanocrystalline-FeSi2/p-type si heterojunction photodiodes at low temperatures. In Multi-Functional Materials and Structures IV. 2013. p. 217-220. (Advanced Materials Research). https://doi.org/10.4028/www.scientific.net/AMR.747.217
    Promros, Nathaporn ; Iwasaki, Ryuhei ; Funasaki, Suguru ; Yamashita, Kyohei ; Yoshitake, Tsuyoshi. / Characterizations of mesa structural near-infrared n-type nanocrystalline-FeSi2/p-type si heterojunction photodiodes at low temperatures. Multi-Functional Materials and Structures IV. 2013. pp. 217-220 (Advanced Materials Research).
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    abstract = "In order to reduce the parasitic capacitance, mesa structural n-type NC-FeSi2/p-type Si heterojunctions were fabricated by photolithography. Their current-voltage characteristics were measured in the dark and under illumination using a 1.31 μm laser in the temperature range of 60 - 300 K. Their junction capacitance density was evidently reduced as compared with that of the normal structural diodes. The dark current was markedly reduced with a decrease in the temperature. At 60 K, a rectifying current ratio in the dark became more than five orders of magnitude at ±1V. The ratio of the photocurrent to the dark current was dramatically enhanced to be approximately two orders of magnitude, and the detectivity was calculated to be 1.5 × 1011 cmHz1/2/W at -1V. The obtained results showed a remarkable improvement in the device performance as compared with those at 300 K.",
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    AU - Funasaki, Suguru

    AU - Yamashita, Kyohei

    AU - Yoshitake, Tsuyoshi

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