Characterizing soft error rates of 65-nm SOTB and bulk SRAMs with muon and neutron beams

Masanori Hashimoto, Wang Liao, Seiya Manabe, Yukinobu Watanabe

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper comparatively discusses soft error immunity of silicon on thin BOX (SOTB) SRAM and conventional bulk SRAM presenting neutron- and muon-induced soft error rates (SER) in 65-nm 6T SRAM over a wide range of supply voltages. The results show that the neutron-induced multiple cell upset (MCU) rates of SOTB at 0.4 V and 1.0 V are 0.01 times and 0.003 times lower than those of bulk at 0.4 V and 1.0 V, respectively. In advanced bulk low-voltage SRAM, protons can be dominant secondary particles, which brings drastic SER elevation, but this will not arise in SOTB SRAM due to its thin SOI layer. We also characterized the immunity to positive and negative muons. We observed negative muon induced more upsets due to muon capture process. We also confirmed that SOTB SRAM was more robust to muon than bulk SRAM.

Original languageEnglish
Title of host publication2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538676264
DOIs
Publication statusPublished - Feb 11 2019
Event2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018 - Burlingame, United States
Duration: Oct 15 2018Oct 18 2018

Publication series

Name2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018

Conference

Conference2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018
CountryUnited States
CityBurlingame
Period10/15/1810/18/18

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality
  • Electronic, Optical and Magnetic Materials
  • Instrumentation

Fingerprint Dive into the research topics of 'Characterizing soft error rates of 65-nm SOTB and bulk SRAMs with muon and neutron beams'. Together they form a unique fingerprint.

  • Cite this

    Hashimoto, M., Liao, W., Manabe, S., & Watanabe, Y. (2019). Characterizing soft error rates of 65-nm SOTB and bulk SRAMs with muon and neutron beams. In 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018 [8640144] (2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/S3S.2018.8640144