TY - JOUR
T1 - Characterizing the superconducting-to-normal transition in Mo/Au transition-edge sensor bilayers
AU - Smith, S. J.
AU - Bandler, S. R.
AU - Brown, A. D.
AU - Chervenak, J. A.
AU - Figueroa-Feliciano, E.
AU - Finkbeiner, F.
AU - Iyomoto, N.
AU - Kelley, R. L.
AU - Kilbourne, C. A.
AU - Porter, F. S.
AU - Sadleir, J. E.
N1 - Funding Information:
Acknowledgements This research was in part supported by an appointment (S. Smith and A. Brown) to the NASA Postdoctoral Program at Goddard Space Flight Center, administered by Oak Ridge Associated Universities through a contract with NASA.
PY - 2008/4
Y1 - 2008/4
N2 - We are developing arrays of Mo/Au bilayer transition-edge sensors (TES's) for future X-ray astronomy missions such as NASA's Constellation-X. The physical properties of the superconducting-to-normal transition in our TES bilayers, while often reproducible and characterized, are not well understood. The addition of normal metal features on top of the bilayer are found to change the shape and temperature of the transition, and they typically reduce the unexplained 'excess' noise. In order to understand and potentially optimize the properties of the transition, we have been studying the temperature, widths and current dependence of these transitions. We report on the characterization of devices both deposited on silicon substrates and suspended on thin silicon nitride membranes. This includes key device parameters such as the logarithmic resistance sensitivity with temperature α, and the logarithmic resistance sensitivity with current β, and their correlation with excess noise.
AB - We are developing arrays of Mo/Au bilayer transition-edge sensors (TES's) for future X-ray astronomy missions such as NASA's Constellation-X. The physical properties of the superconducting-to-normal transition in our TES bilayers, while often reproducible and characterized, are not well understood. The addition of normal metal features on top of the bilayer are found to change the shape and temperature of the transition, and they typically reduce the unexplained 'excess' noise. In order to understand and potentially optimize the properties of the transition, we have been studying the temperature, widths and current dependence of these transitions. We report on the characterization of devices both deposited on silicon substrates and suspended on thin silicon nitride membranes. This includes key device parameters such as the logarithmic resistance sensitivity with temperature α, and the logarithmic resistance sensitivity with current β, and their correlation with excess noise.
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U2 - 10.1007/s10909-007-9619-z
DO - 10.1007/s10909-007-9619-z
M3 - Article
AN - SCOPUS:40649123247
SN - 0022-2291
VL - 151
SP - 195
EP - 200
JO - Journal of Low Temperature Physics
JF - Journal of Low Temperature Physics
IS - 1-2 PART 1
ER -