Charge carrier injection and transport in organic thin films

Toshinori Matsushima; Guang He Jin; Yoshihiro Kanai; Tomoyuki Yokota; Seiki Kitada; Toshiyuki Kishi; Hideyuki Murata

doi:10.1117/12.793969

Charge carrier injection and transport in organic thin films

Toshinori Matsushima, Guang He Jin, Yoshihiro Kanai, Tomoyuki Yokota, Seiki Kitada, Toshiyuki Kishi, Hideyuki Murata

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Current density-voltage (J-V) characteristics of hole-only devices using indium tin oxide (ITO) anode and N,N′- diphenyl-N,N′-bis(1-naphthyl) -1,1′-biphenyl-4,4′-diamine (α-NPD) layer were measured with various thicknesses of a molybdenum oxide (MoO₃) buffer layer inserted between ITO and α-NPD. The device with a 0.75-nm-thick MoO ₃ layer forms Ohmic hole injection at the ITO/MoO₃/ α-NPD interfaces and J-V characteristics of this device are controlled by a space-charge-limited current. Results of X-ray photoelectron and ultraviolet/visible/near-infrared absorption studies revealed that this Ohmic hole injection is attributable to electron transfers from ITO to MoO₃ and from α-NPD to MoO₃. Moreover, we demonstrated that the Ohmic hole injection is realized at the interfaces of ITO/rubrene and ITO/N,N′-di(m-tolyl)-N,N′-diphenylbenzidine (TPD) using an ultrathin MoO₃ layer as well.

Original language	English
Title of host publication	Organic Light Emitting Materials and Devices XII
DOIs	https://doi.org/10.1117/12.793969
Publication status	Published - Nov 12 2008
Externally published	Yes
Event	Organic Light Emitting Materials and Devices XII - San Diego, CA, United States Duration: Aug 10 2008 → Aug 12 2008

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	7051
ISSN (Print)	0277-786X

Other

Other	Organic Light Emitting Materials and Devices XII
Country	United States
City	San Diego, CA
Period	8/10/08 → 8/12/08

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.793969

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Charge carrier injection and transport in organic thin films. / Matsushima, Toshinori; Jin, Guang He; Kanai, Yoshihiro; Yokota, Tomoyuki; Kitada, Seiki; Kishi, Toshiyuki; Murata, Hideyuki.

Organic Light Emitting Materials and Devices XII. 2008. 705112 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7051).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Matsushima, T, Jin, GH, Kanai, Y, Yokota, T, Kitada, S, Kishi, T & Murata, H 2008, Charge carrier injection and transport in organic thin films. in Organic Light Emitting Materials and Devices XII., 705112, Proceedings of SPIE - The International Society for Optical Engineering, vol. 7051, Organic Light Emitting Materials and Devices XII, San Diego, CA, United States, 8/10/08. https://doi.org/10.1117/12.793969

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abstract = "Current density-voltage (J-V) characteristics of hole-only devices using indium tin oxide (ITO) anode and N,N′- diphenyl-N,N′-bis(1-naphthyl) -1,1′-biphenyl-4,4′-diamine (α-NPD) layer were measured with various thicknesses of a molybdenum oxide (MoO3) buffer layer inserted between ITO and α-NPD. The device with a 0.75-nm-thick MoO 3 layer forms Ohmic hole injection at the ITO/MoO3/ α-NPD interfaces and J-V characteristics of this device are controlled by a space-charge-limited current. Results of X-ray photoelectron and ultraviolet/visible/near-infrared absorption studies revealed that this Ohmic hole injection is attributable to electron transfers from ITO to MoO3 and from α-NPD to MoO3. Moreover, we demonstrated that the Ohmic hole injection is realized at the interfaces of ITO/rubrene and ITO/N,N′-di(m-tolyl)-N,N′-diphenylbenzidine (TPD) using an ultrathin MoO3 layer as well.",

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AU - Matsushima, Toshinori

AU - Jin, Guang He

AU - Kanai, Yoshihiro

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AU - Kitada, Seiki

AU - Kishi, Toshiyuki

AU - Murata, Hideyuki

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AB - Current density-voltage (J-V) characteristics of hole-only devices using indium tin oxide (ITO) anode and N,N′- diphenyl-N,N′-bis(1-naphthyl) -1,1′-biphenyl-4,4′-diamine (α-NPD) layer were measured with various thicknesses of a molybdenum oxide (MoO3) buffer layer inserted between ITO and α-NPD. The device with a 0.75-nm-thick MoO 3 layer forms Ohmic hole injection at the ITO/MoO3/ α-NPD interfaces and J-V characteristics of this device are controlled by a space-charge-limited current. Results of X-ray photoelectron and ultraviolet/visible/near-infrared absorption studies revealed that this Ohmic hole injection is attributable to electron transfers from ITO to MoO3 and from α-NPD to MoO3. Moreover, we demonstrated that the Ohmic hole injection is realized at the interfaces of ITO/rubrene and ITO/N,N′-di(m-tolyl)-N,N′-diphenylbenzidine (TPD) using an ultrathin MoO3 layer as well.

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