TY - GEN
T1 - Charge carrier injection and transport in organic thin films
AU - Matsushima, Toshinori
AU - Jin, Guang He
AU - Kanai, Yoshihiro
AU - Yokota, Tomoyuki
AU - Kitada, Seiki
AU - Kishi, Toshiyuki
AU - Murata, Hideyuki
PY - 2008/11/12
Y1 - 2008/11/12
N2 - Current density-voltage (J-V) characteristics of hole-only devices using indium tin oxide (ITO) anode and N,N′- diphenyl-N,N′-bis(1-naphthyl) -1,1′-biphenyl-4,4′-diamine (α-NPD) layer were measured with various thicknesses of a molybdenum oxide (MoO3) buffer layer inserted between ITO and α-NPD. The device with a 0.75-nm-thick MoO 3 layer forms Ohmic hole injection at the ITO/MoO3/ α-NPD interfaces and J-V characteristics of this device are controlled by a space-charge-limited current. Results of X-ray photoelectron and ultraviolet/visible/near-infrared absorption studies revealed that this Ohmic hole injection is attributable to electron transfers from ITO to MoO3 and from α-NPD to MoO3. Moreover, we demonstrated that the Ohmic hole injection is realized at the interfaces of ITO/rubrene and ITO/N,N′-di(m-tolyl)-N,N′-diphenylbenzidine (TPD) using an ultrathin MoO3 layer as well.
AB - Current density-voltage (J-V) characteristics of hole-only devices using indium tin oxide (ITO) anode and N,N′- diphenyl-N,N′-bis(1-naphthyl) -1,1′-biphenyl-4,4′-diamine (α-NPD) layer were measured with various thicknesses of a molybdenum oxide (MoO3) buffer layer inserted between ITO and α-NPD. The device with a 0.75-nm-thick MoO 3 layer forms Ohmic hole injection at the ITO/MoO3/ α-NPD interfaces and J-V characteristics of this device are controlled by a space-charge-limited current. Results of X-ray photoelectron and ultraviolet/visible/near-infrared absorption studies revealed that this Ohmic hole injection is attributable to electron transfers from ITO to MoO3 and from α-NPD to MoO3. Moreover, we demonstrated that the Ohmic hole injection is realized at the interfaces of ITO/rubrene and ITO/N,N′-di(m-tolyl)-N,N′-diphenylbenzidine (TPD) using an ultrathin MoO3 layer as well.
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U2 - 10.1117/12.793969
DO - 10.1117/12.793969
M3 - Conference contribution
AN - SCOPUS:55549125214
SN - 9780819472717
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Organic Light Emitting Materials and Devices XII
T2 - Organic Light Emitting Materials and Devices XII
Y2 - 10 August 2008 through 12 August 2008
ER -