Charge carrier injection and transport in organic thin films

Toshinori Matsushima; Guang He Jin; Yoshihiro Kanai; Tomoyuki Yokota; Seiki Kitada; Toshiyuki Kishi; Hideyuki Murata

doi:10.1117/12.793969

Charge carrier injection and transport in organic thin films

Toshinori Matsushima, Guang He Jin, Yoshihiro Kanai, Tomoyuki Yokota, Seiki Kitada, Toshiyuki Kishi, Hideyuki Murata

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Current density-voltage (J-V) characteristics of hole-only devices using indium tin oxide (ITO) anode and N,N′- diphenyl-N,N′-bis(1-naphthyl) -1,1′-biphenyl-4,4′-diamine (α-NPD) layer were measured with various thicknesses of a molybdenum oxide (MoO₃) buffer layer inserted between ITO and α-NPD. The device with a 0.75-nm-thick MoO ₃ layer forms Ohmic hole injection at the ITO/MoO₃/ α-NPD interfaces and J-V characteristics of this device are controlled by a space-charge-limited current. Results of X-ray photoelectron and ultraviolet/visible/near-infrared absorption studies revealed that this Ohmic hole injection is attributable to electron transfers from ITO to MoO₃ and from α-NPD to MoO₃. Moreover, we demonstrated that the Ohmic hole injection is realized at the interfaces of ITO/rubrene and ITO/N,N′-di(m-tolyl)-N,N′-diphenylbenzidine (TPD) using an ultrathin MoO₃ layer as well.

Original language	English
Title of host publication	Organic Light Emitting Materials and Devices XII
DOIs	https://doi.org/10.1117/12.793969
Publication status	Published - Nov 12 2008
Externally published	Yes
Event	Organic Light Emitting Materials and Devices XII - San Diego, CA, United States Duration: Aug 10 2008 → Aug 12 2008

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	7051
ISSN (Print)	0277-786X

Other

Other	Organic Light Emitting Materials and Devices XII
Country	United States
City	San Diego, CA
Period	8/10/08 → 8/12/08

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All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Cite this

Matsushima, T., Jin, G. H., Kanai, Y., Yokota, T., Kitada, S., Kishi, T., & Murata, H. (2008). Charge carrier injection and transport in organic thin films. In Organic Light Emitting Materials and Devices XII [705112] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7051). https://doi.org/10.1117/12.793969

Charge carrier injection and transport in organic thin films. / Matsushima, Toshinori; Jin, Guang He; Kanai, Yoshihiro; Yokota, Tomoyuki; Kitada, Seiki; Kishi, Toshiyuki; Murata, Hideyuki.

Organic Light Emitting Materials and Devices XII. 2008. 705112 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7051).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Matsushima, T, Jin, GH, Kanai, Y, Yokota, T, Kitada, S, Kishi, T & Murata, H 2008, Charge carrier injection and transport in organic thin films. in Organic Light Emitting Materials and Devices XII., 705112, Proceedings of SPIE - The International Society for Optical Engineering, vol. 7051, Organic Light Emitting Materials and Devices XII, San Diego, CA, United States, 8/10/08. https://doi.org/10.1117/12.793969

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AU - Murata, Hideyuki

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AB - Current density-voltage (J-V) characteristics of hole-only devices using indium tin oxide (ITO) anode and N,N′- diphenyl-N,N′-bis(1-naphthyl) -1,1′-biphenyl-4,4′-diamine (α-NPD) layer were measured with various thicknesses of a molybdenum oxide (MoO3) buffer layer inserted between ITO and α-NPD. The device with a 0.75-nm-thick MoO 3 layer forms Ohmic hole injection at the ITO/MoO3/ α-NPD interfaces and J-V characteristics of this device are controlled by a space-charge-limited current. Results of X-ray photoelectron and ultraviolet/visible/near-infrared absorption studies revealed that this Ohmic hole injection is attributable to electron transfers from ITO to MoO3 and from α-NPD to MoO3. Moreover, we demonstrated that the Ohmic hole injection is realized at the interfaces of ITO/rubrene and ITO/N,N′-di(m-tolyl)-N,N′-diphenylbenzidine (TPD) using an ultrathin MoO3 layer as well.

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10.1117/12.793969