TY - JOUR
T1 - Charge carrier mobility study of a mesogenic thienothiophene derivative in bulk and thin films
AU - Mazur, Leszek
AU - Castiglione, Andrea
AU - Ocytko, Kornel
AU - Kameche, Farid
AU - Macabies, Romain
AU - Ainsebaa, Abdelmalek
AU - Kreher, David
AU - Heinrich, Benoît
AU - Donnio, Bertrand
AU - Sanaur, Sébastien
AU - Lacaze, Emmanuelle
AU - Fave, Jean Louis
AU - Matczyszyn, Katarzyna
AU - Samoc, Marek
AU - Wu, Jeong Weon
AU - Attias, Andre Jean
AU - Ribierre, Jean Charles
AU - Mathevet, Fabrice
PY - 2014/4
Y1 - 2014/4
N2 - A novel mesogenic 2,5-bis-(5-octylthiophene)-thieno[3,2b]thiophene (TT) derivative has been synthesized. The fused-ring thiophene, end-capped with two octylthiophenes, exhibits ordered lamellar mesophases which were characterized by polarizing optical microscopy, differential scanning calorimetry and small-angle X-ray diffraction at various temperatures. The charge transport properties were investigated by time-of-flight technique as a function of temperature. On cooling from isotropic phase, a maximum hole mobility value of 0.07 cm2 V-1 s-1 was measured in the highly ordered mesophase of the bulk films. Field-effect transistor experiments on both solution and vacuum deposited thin films have also been performed. The solution-processed films exhibit charge carrier mobilities several orders of magnitude lower than values extracted from bulk time-of-flight curves and from vacuum deposited thin film transistors. This work provides evidence that the melt-processing route is an efficient alternative to commonly used solution-processing for fabrication of charge transporting layers from liquid crystalline semiconductors, with performances comparable to evaporation techniques.
AB - A novel mesogenic 2,5-bis-(5-octylthiophene)-thieno[3,2b]thiophene (TT) derivative has been synthesized. The fused-ring thiophene, end-capped with two octylthiophenes, exhibits ordered lamellar mesophases which were characterized by polarizing optical microscopy, differential scanning calorimetry and small-angle X-ray diffraction at various temperatures. The charge transport properties were investigated by time-of-flight technique as a function of temperature. On cooling from isotropic phase, a maximum hole mobility value of 0.07 cm2 V-1 s-1 was measured in the highly ordered mesophase of the bulk films. Field-effect transistor experiments on both solution and vacuum deposited thin films have also been performed. The solution-processed films exhibit charge carrier mobilities several orders of magnitude lower than values extracted from bulk time-of-flight curves and from vacuum deposited thin film transistors. This work provides evidence that the melt-processing route is an efficient alternative to commonly used solution-processing for fabrication of charge transporting layers from liquid crystalline semiconductors, with performances comparable to evaporation techniques.
UR - http://www.scopus.com/inward/record.url?scp=84896853200&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84896853200&partnerID=8YFLogxK
U2 - 10.1016/j.orgel.2014.01.017
DO - 10.1016/j.orgel.2014.01.017
M3 - Article
AN - SCOPUS:84896853200
VL - 15
SP - 943
EP - 953
JO - Organic Electronics: physics, materials, applications
JF - Organic Electronics: physics, materials, applications
SN - 1566-1199
IS - 4
ER -