Charge-compensative ion substitution of La3+-substituted bismuth titanate thin films for enhancement of remanent polarization

Hiroshi Uchida, Isao Okada, Hirofumi Matsuda, Takashi Iijima, Takayuki Watanabe, Hiroshi Funakubo

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Ferroelectric properties of La3+-substituted bismuth titanate (BLT) films were modified by Ti-site substitution using higher-valence ions than the Ti4+ ion. Thin films of V5+-, W6+-, Zr4+- and nonsubstituted BLT, i.e., (Bi3.24La 0.75)(Ti2.97V0.03)O12 (BLTV), (Bi3.23La0.75)(Ti2.97W0.03)O 12 (BLTW), (Bi3.25La0.75)(Ti 2.97Zr0.03)O12 (BLTZ) and (Bi 3.25La0.75)Ti3.00O12, respectively, were fabricated on (111)Pt/Ti/SiO2/(100)Si substrates by chemical solution deposition. These films consisted of isotropic granular structures without a preferred crystal orientation. Remanent polarizations (Pr) of the BLTV and BLTW films (13 and 12μC/cm2, respectively) were larger than those of the BLT and BLTZ films (8 and 9μC/cm2, respectively), while those films had similar coercive fields (Ec) of approximately 120kV/cm. BLTV and BLTW films also had lower leakage current densities (approximately 10-8 A/cm2 at 100kV/cm) than that of BLT film (approximately 10-6A/cm2 at 100kV/cm). As no obvious difference was found in the crystal orientation or the microstructure, the enhancement of the Prvalue and suppression of the leakage current density could be achieved on a BLT film by the charge compensation using higher-valence ions than the Ti4+ ion.

Original languageEnglish
Pages (from-to)2636-2639
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume43
Issue number5 A
DOIs
Publication statusPublished - Jan 1 2004

Fingerprint

ion charge
Remanence
Bismuth
bismuth
Substitution reactions
substitutes
Thin films
augmentation
Ions
polarization
thin films
Leakage currents
Crystal orientation
ions
leakage
Current density
current density
valence
Ferroelectric materials
crystals

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Charge-compensative ion substitution of La3+-substituted bismuth titanate thin films for enhancement of remanent polarization. / Uchida, Hiroshi; Okada, Isao; Matsuda, Hirofumi; Iijima, Takashi; Watanabe, Takayuki; Funakubo, Hiroshi.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 43, No. 5 A, 01.01.2004, p. 2636-2639.

Research output: Contribution to journalArticle

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AU - Watanabe, Takayuki

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