Charge transfer from I2- (CO2)n cluster anion to silicon surface: Cluster-size dependence

Hisato Yasumatsu, Akira Terasakia, Tamotsu Kondow

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The charge survival yield for a cluster anion, I2- (CO2)n (n = 0-30) during its collision onto a silicon surface covered with silicon oxide layers of ∼2 nm in thickness was measured as a function of the number of the CO2 molecules, n, and the collision energy (per I2-) in the range of 1-80 eV. A monotonic increase in the charge survival yield with n was observed. This means that the efficiency of the charge transfer from the core ion, I2-, to the surface is reduced with the increase of n. It was concluded that the CO2 molecules suppress the charge transfer by behaving as an electrostatic 'stabilizer' of the core ion and as a 'spacer' between the core ion and the surface.

Original languageEnglish
Pages (from-to)297-303
Number of pages7
JournalInternational Journal of Mass Spectrometry and Ion Processes
Volume174
Issue number1-3
Publication statusPublished - Dec 1 1998
Externally publishedYes

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Silicon
Anions
Charge transfer
Negative ions
charge transfer
Ions
anions
silicon
ions
Molecules
collisions
Silicon oxides
silicon oxides
spacers
molecules
Electrostatics
electrostatics
energy

All Science Journal Classification (ASJC) codes

  • Spectroscopy

Cite this

Charge transfer from I2- (CO2)n cluster anion to silicon surface : Cluster-size dependence. / Yasumatsu, Hisato; Terasakia, Akira; Kondow, Tamotsu.

In: International Journal of Mass Spectrometry and Ion Processes, Vol. 174, No. 1-3, 01.12.1998, p. 297-303.

Research output: Contribution to journalArticle

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