Charge writing at the LaAlO3/SrTiO3 surface

Yanwu Xie; Christopher Bell; Takeaki Yajima; Yasuyuki Hikita; Harold Y. Hwang

doi:10.1021/nl1012695

Charge writing at the LaAlO₃/SrTiO₃ surface

Yanwu Xie, Christopher Bell, Takeaki Yajima, Yasuyuki Hikita, Harold Y. Hwang

Research output: Contribution to journal › Article › peer-review

106 Citations (Scopus)

Abstract

Biased conducting-tip atomic force microscopy (AFM) has been shown to write and erase nanoscale metallic lines at the LaAlO₃/SrTiO₃ interface. Using various AFM modes, we show the mechanism of conductivity switching is the writing of surface charge. These charges are stably deposited on a wide range of LaAlO₃ thicknesses, including bulk crystals. A strong asymmetry with writing polarity was found for 1 and 2 unit cells of LaAlO₃, providing experimental evidence for a theoretically predicted built-in potential.

Original language	English
Pages (from-to)	2588-2591
Number of pages	4
Journal	Nano Letters
Volume	10
Issue number	7
DOIs	https://doi.org/10.1021/nl1012695
Publication status	Published - Jul 14 2010
Externally published	Yes

All Science Journal Classification (ASJC) codes

Bioengineering
Chemistry(all)
Materials Science(all)
Condensed Matter Physics
Mechanical Engineering

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10.1021/nl1012695

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abstract = "Biased conducting-tip atomic force microscopy (AFM) has been shown to write and erase nanoscale metallic lines at the LaAlO3/SrTiO3 interface. Using various AFM modes, we show the mechanism of conductivity switching is the writing of surface charge. These charges are stably deposited on a wide range of LaAlO3 thicknesses, including bulk crystals. A strong asymmetry with writing polarity was found for 1 and 2 unit cells of LaAlO3, providing experimental evidence for a theoretically predicted built-in potential.",

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T1 - Charge writing at the LaAlO3/SrTiO3 surface

AU - Xie, Yanwu

AU - Bell, Christopher

AU - Yajima, Takeaki

AU - Hikita, Yasuyuki

AU - Hwang, Harold Y.

PY - 2010/7/14

Y1 - 2010/7/14

N2 - Biased conducting-tip atomic force microscopy (AFM) has been shown to write and erase nanoscale metallic lines at the LaAlO3/SrTiO3 interface. Using various AFM modes, we show the mechanism of conductivity switching is the writing of surface charge. These charges are stably deposited on a wide range of LaAlO3 thicknesses, including bulk crystals. A strong asymmetry with writing polarity was found for 1 and 2 unit cells of LaAlO3, providing experimental evidence for a theoretically predicted built-in potential.

AB - Biased conducting-tip atomic force microscopy (AFM) has been shown to write and erase nanoscale metallic lines at the LaAlO3/SrTiO3 interface. Using various AFM modes, we show the mechanism of conductivity switching is the writing of surface charge. These charges are stably deposited on a wide range of LaAlO3 thicknesses, including bulk crystals. A strong asymmetry with writing polarity was found for 1 and 2 unit cells of LaAlO3, providing experimental evidence for a theoretically predicted built-in potential.

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JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

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Charge writing at the LaAlO₃/SrTiO₃ surface

Abstract

All Science Journal Classification (ASJC) codes

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